EP0425411A2
Expired / Lapsed
EP
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Highly sensitive dry developable deep UV photoresist
Assignee: International Business Machines Corp
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Filing: 1990-09-04
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Granted: —
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Expires: 2010-09-04
Abstract
Abstract Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.
Inventors
- 👤 William Ross Brunsvold
- 👤 Philip Chiu
- 👤 Willard Earl Conley, Jr.
- 👤 Dale Murray Crockatt
- 👤 Melvin Warren Montgomery
- 👤 Wayne Martin Moreau
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 19:35
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
82 words
An improved dry developable photoresist composition which comprises a phenol-aldehyde type condensation product, the hydroxyl group of which is substituted with an acid labile group which inhibits the reaction of the protected condensation product with organometallic reagents and a photoactive compound which generates a strong acid upon exposure to deep UV radiation or vacuum UV radiation to remove the acid labile groups from the condensation product in its exposed regions to enable reaction of the de-protected hydroxy groups with the organometallic reagents.
Claim 2
Dependent Claim
82 words
An improved dry developable photoresist composition which comprises a phenol-aldehyde type condensation product, the hydroxyl group of which is substituted with an acid labile group which inhibits the reaction of the protected condensation product with organometallic reagents and a photoactive compound which generates a strong acid upon exposure to deep UV radiation or vacuum UV radiation to remove the acid labile groups from the condensation product in its exposed regions to enable reaction of the de-protected hydroxy groups with the organometallic reagents.
Claim 3
Dependent Claim
82 words
The photoresist composition of Claim 1 wherein the phenol aldehyde type condensation product may be represented by the general formula where R is selected from the group consisting of H, -CH₃ and phenyl R′ is selected from the group consisting of H, alkyl and aryl, and R˝ is selected from the group consisting of H, halo, nitro, alkoxy, alkyl, aryl, and hydroxyl, and where the aromatic ring may have fused thereto an additional ring structure to form a naphthol or anthracene unit.
Claim 4
Dependent Claim
26 words
The photoresist composition of Claim 2 wherein the phenol aldehyde type condensation product is selected from the group consisting of meta -cresol novolak and naphthol novolak.
Claim 5
Dependent Claim
49 words
The photoresist composition of Claim 1 wherein the acid labile protecting group forms a secondary or tertiary carbonium ion upon reaction with acid having an available alpha proton and is degradable to form an olefin and an hydronium ion to continue the acid hydrolysis in the region of exposure.
Claim 6
Dependent Claim
28 words
The photoresist composition of Claim 4 wherein the acid labile protecting group is selected from the group consisting of t -butyloxycarbonyl, 2-propyloxycarbonyl, t -butyl ether, and t -butylcarbonyl.
Claim 7
Dependent Claim
35 words
The photoresist composition of Claim 1 wherein the photoactive compound is selected from the group consisting of metallic and nonmetallic onium salts, tosylates and non-metallic sulfonic acid precursors which generatestrong acids upon exposure to radiation.
Claim 8
Dependent Claim
25 words
The photoresist composition of Claim 6 wherein the metallic onium salt is selected from the group consisting of diaryliodonium salts, arylsulfonium salts, and arylselenonium salts.
Claim 9
Dependent Claim
98 words
The photoresist composition of claim 6 wherein the non-metallic sulfonic acid precursor is of the form where Q is selected from the group consisting of -CF₃, -CF₂CF₃, -CF₂CF₂H, -(CF₂) n -Z where n=1 to 4 and Z is H, alkyl, aryl, where m = 1 to 5, where X and Y (1) form a cyclic or polycyclic ring which may contain one or more hetero-atoms, (2) form a fused aromatic ring, (3) may be independently H, alkyl or aryl, (4) may be attached to another sulfonyloxyimide-containing residue, or (5) may be attached to a polymeric chain or backbone.
Claim 10
Dependent Claim
21 words
The photoresist composition of claim 1 wherein at least 90% of the hydroxyl groups are substituted with said acid labile groups.
Claim 11
Dependent Claim
21 words
The photoresist composition of claim 1 wherein at least 95% of the hydroxyl groups are substituted with said acid labile groups.
Claim 12
Dependent Claim
21 words
The photoresist composition of claim 1 wherein at least 98% of the hydroxyl groups are substituted with said acid labile groups.
Claim 13
Dependent Claim
32 words
The photoresist composition of claim 1 which is dissolved in a solvent selected from the group consisting of xylene, alphyl acetate, propylene glycol alkyl ether acetate, and ethyl lactate, and mixtures thereof.
Claim 14
Dependent Claim
15 words
The photoresist composition of claim 13 wherein the solvent is propylene glycol methyl ether acetate.
Claim 15
Dependent Claim
45 words
The composition of claim 12 wherein the protected phenol-aldehyde condensation product is present in an amount from 15 - 40% by weight of the composition, and the photoinitiator is present in an amount from 1 to 40% by weight of the protected phenol-aldehyde condensation product.
Claim 16
Dependent Claim
21 words
The composition of claim 1 wherein the protected phenol-aldehyde condensation product is a t -butylcarbonate of a m -cresol novolak resin.
References Cited (Backward Citations)
No citation records indexed.
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