Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
116 words
A method of semiconductor fabrication comprising: forming at least a first (e.g., 13) and second (e.g., 17) material layers overlying a substrate (e.g., 11); patterning said first (e.g., 13) and second (e.g., 17) layers to form an opening exposing said substrate; AND CHARACTERIZED BY the additional steps of: selectively removing a portion of said first layer (e.g., 13), creating a gap (e.g., 21) between a portion of said second (e.g., 17) layer and said substrate (e.g., 11); forming a spacer (e.g., 25) within said opening, said spacer (e.g., 25) having a protrusion (e.g., 27) within said gap (e.g., 21); forming an oxide (e.g., 23) of said substrate material, said oxide being substantially enclosed by said spacer.
Claim 2
Independent Claim
116 words
A method of semiconductor fabrication comprising: forming at least a first (e.g., 13) and second (e.g., 17) material layers overlying a substrate (e.g., 11); patterning said first (e.g., 13) and second (e.g., 17) layers to form an opening exposing said substrate; AND CHARACTERIZED BY the additional steps of: selectively removing a portion of said first layer (e.g., 13), creating a gap (e.g., 21) between a portion of said second (e.g., 17) layer and said substrate (e.g., 11); forming a spacer (e.g., 25) within said opening, said spacer (e.g., 25) having a protrusion (e.g., 27) within said gap (e.g., 21); forming an oxide (e.g., 23) of said substrate material, said oxide being substantially enclosed by said spacer.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein said substrate (e.g., 11) consists essentially of silicon; said first layer(e.g., 13) consists essentially of silicon dioxide; and said second layer (eg., 17) consists essentially of silicon nitride.
Claim 4
Dependent Claim
31 words
The method of claim 1 further including the steps of: removing said first (e.g., 13) and second layers (e.g., 17) and said spacer (e.g., 25); and etching said oxide (e.g., 29).
Claim 5
Dependent Claim
36 words
The method of claim 1 further including the step of forming a third (e.g., 15) layer between said first (e.g., 13) and second (e.g., 17) layers, said third (e.g., 15) layer serving to provide stress relief.
Claim 6
Dependent Claim
13 words
The method of claim 4 wherein said third (e.g., 15) layer is polysilicon.
Claim 7
Dependent Claim
33 words
The method of claim 1 further including the additional step of forming an oxide (e.g., 51) upon said exposed (e.g., 19) portion of said substrate prior to said spacer (e.g., 25) forming step.
Claim 8
Dependent Claim
17 words
The method of claim 1 in which said oxide (e.g., 29) is formed by high pressure oxidation.