EP0421735A2
Expired / Lapsed
EP
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Method of Manufacturing a Semiconductor Device
Assignee: Toshiba Corp
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Filing: 1990-10-02
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Granted: —
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Expires: 2010-10-02
Abstract
Abstract According to this invention, there is provided to a semiconductor device comprising a semiconductor substrate (1) on which an element is formed, an insulating interlayer (9, 10) formed on the semiconductor substrate (11), and a wiring layer (18) having a structure in which a surface of a copper layer (14) in a crystal state is covered with a nitride of a metal not forming an intermetallic compound with copper and the metal and/or the metal nitride is present at grain boundaries of the copper layer (14).
Inventors
- 👤 Yasushi C/O Intellectual Property Div. Nakasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 21:04
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10P; H10P14/00; H10P14/40; H10P14/412; H10W20/01; H10W20/031; H10W20/064; H10W20/425; H10W20/45; H10W20/47; H10W20/48; Y; Y10; Y10S; Y10S148/00; Y10S148/035
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
85 words
A semiconductor device comprising: a semiconductor substrate (1) on which an element is formed; an insulating interlayer (9, 10) formed on the semiconductor substrate (1); and a wiring layer (18) formed on the insulating interlayer (10) and having a structure in which a surface of a copper layer (14) in a crystal state is covered with a nitride of a metal not forming an intermetallic compound with copper and the metal and/or the metal nitride is present at grain boundaries of the copper layer (14).
Claim 2
Dependent Claim
85 words
A semiconductor device comprising: a semiconductor substrate (1) on which an element is formed; an insulating interlayer (9, 10) formed on the semiconductor substrate (1); and a wiring layer (18) formed on the insulating interlayer (10) and having a structure in which a surface of a copper layer (14) in a crystal state is covered with a nitride of a metal not forming an intermetallic compound with copper and the metal and/or the metal nitride is present at grain boundaries of the copper layer (14).
Claim 3
Dependent Claim
37 words
The device according to claim 1, characterized in that the metal not forming the intermetallic compound with copper is at least any one metal selected from the group consisting of vanadium, niobium, tantalum, chromium, molybdenum, and tungsten.
Claim 4
Dependent Claim
22 words
The device according to claim 1, characterized in that a wiring layer (18) falls within a range of 0.1 to 0.9 µm.
Claim 5
Dependent Claim
36 words
The device according to claim 1, characterized in that a thin layer (13) made of the metal not forming the intermetallic compound with copper is formed between the insulating interlayer (10) and the wiring layer (18).
Claim 6
Dependent Claim
34 words
The device according to claim 4, characterized in that the thin layer (13) is made of at least any one metal selected from the group consisting of vanadium, niobium, tantalum, chromium, molybdenum, and tungsten.
Claim 7
Dependent Claim
22 words
The device according to claim 1, characterized in that the thin layer (13) has a 30% thickness of the wiring layer (18).
Claim 8
Independent Claim
159 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an element on a semiconductor substrate (1); depositing an insulating interlayer (9, 10) on the semiconductor substrate (1); sequentially depositing a thin layer (13) made of a metal not forming an intermetallic compound with copper and a copper layer (14) on the insulating interlayer (10) to form a stacked layer; patterning the stacked layer; and forming a wiring layer (18) having a structure in which the patterned stacked layer is heat-treated in a nitrogen atmosphere to diffuse a metal of the metal thin layer (13) to a peripheral surface of a copper layer (14) through the copper layer (14), the diffused metal is nitrided to cover a surface of the copper layer (14) in a crystal state with a nitride of a metal not forming an intermetallic compound with copper, and the metal and/or the metal nitride is present at grain boundaries of the copper film (14).
Claim 9
Independent Claim
159 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an element on a semiconductor substrate (1); depositing an insulating interlayer (9, 10) on the semiconductor substrate (1); sequentially depositing a thin layer (13) made of a metal not forming an intermetallic compound with copper and a copper layer (14) on the insulating interlayer (10) to form a stacked layer; patterning the stacked layer; and forming a wiring layer (18) having a structure in which the patterned stacked layer is heat-treated in a nitrogen atmosphere to diffuse a metal of the metal thin layer (13) to a peripheral surface of a copper layer (14) through the copper layer (14), the diffused metal is nitrided to cover a surface of the copper layer (14) in a crystal state with a nitride of a metal not forming an intermetallic compound with copper, and the metal and/or the metal nitride is present at grain boundaries of the copper film (14).
Claim 10
Dependent Claim
35 words
The method according to claim 7, characterized in that the metal thin layer (13) is made of at least any one metal selected from a group consisting of vanadium, niobium, tantalum, chromium, molybdenum, and tungsten.
Claim 11
Dependent Claim
41 words
The method according to claim 7, characterized in that after the metal is diffused in the copper layer (14) from the metal thin layer (13) in the heat treatment, the metal thin layer (13) is left under the wiring layer (18).
Claim 12
Dependent Claim
31 words
The method according to claim 8, characterized in that the metal thin layer (13) is made of chromium, and the heat treatment is performed at a temperature of 600 to 800°C.
Claim 13
Dependent Claim
31 words
The method according to claim 8, characterized in that the metal thin layer (13) is made of niobium, and the heat treatment is performed at a temperature of 600 to 800°C.
Claim 14
Dependent Claim
19 words
The method according to claim 7, characterized in that the heat treatment in the nitrogen atmosphere is plasma nitriding.
Claim 15
Dependent Claim
28 words
The method according to claim 7, characterized in that before the heat treatment in the nitrogen atmosphere is performed, a heat treatment is performed in an inert gas.
References Cited (Backward Citations)
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