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EP0419863A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Multiple I/O select memory

Assignee: Texas Instruments Inc
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Filing: 1990-08-27
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Granted: —
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Expires: 2010-08-27
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Abstract

Abstract A semiconductor memory device architecture by which a given number of discrete components can provide a memory module of increased capacity. A memory module (50) includes a plurality of discrete memory circuits (52) each organized to provide an individual data string having a length that is an integer multiple of four bits. The memory circuits (52) are arranged to provide a combined data string having a length equal to the sum of the individual data string lengths and each circuit includes a signal line connected to control transfer of individual data strings. A different data pin is associated with each bit of the combined data string to transfer a datum for output from the module. Each signal line is connected to a control pin to receive an external signal for initiating transfer of one of the individual strings from one memory circuits (52). The module (50) comprises an additional memory circuit (10) which includes a plurality of additional signal lines and a plurality of additional data lines. A first of the additional signal lines is wired in common with the signal line of a first one of the data memory circuits and a second of the additional signal lines is wired in common with the signal line of a second one of the data memory circuits. The additional circuit is responsive to transfer a bit of data along one of the additional data lines when an individual data string is transferred from one of the memory circuits.

Inventors

  • 👤 Joseph H. Neal
  • 👤 Kenneth A. Poteet

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-05 19:26
CPC Classifications
G; G06; G06F; G06F12/00; G06F11/00; G06F11/07; G06F11/08; G06F11/10; G06F11/1008; G06F11/1044; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C5/00; G11C5/02; G11C5/025; G11C5/06; G11C7/00; G11C7/10; G11C7/1006; G11C7/1015; G11C7/1018; G11C7/1021; G11C7/103; G11C7/1033; G11C8/00; G11C8/18

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 294 words
A memory module of the type formed with a plurality of discrete memory circuits and used to satisfy memory density rquirements greater than that provided by individual circuits mounted thereon, said module comprising: a plurality of discrete data memory circuits each organized to provide an individual string having length equal to an integer multiple of four bits, said circuits arranged to provide a combined data string having a length equal to the sum of the individual string lengths, each circuit including a signal line connected to control transfer of individual data strings; a plurality of data pins each associated with a different bit of the combined data string and connected to transfer a datum, associated with one of the individual strings, from one of the memory circuits for output from said module; a plurality of control pins with each signal line connected to a control pin to receive an external signal for initiating transfer of one of the individual data strings from one of the memory circuits; and an additional memory circuit having a plurality of additional signal lines and a plurality of additional data lines, with a first of the additional signal lines wired in common with the signal line of a first of the data memory circuits to render said additional circuit responsive to transfer a bit of data along one of the additional data lines when an individual data string is transferred from the first memory circuit; and a second of the additional signal lines wired in common with the signal line of a second of the data memory circuits to render said additional circuit responsive to transfer a bit of data along one of the additional data lines when an individual data string is transferred from the second memory circuit.
Claim 2
Dependent Claim 294 words
A memory module of the type formed with a plurality of discrete memory circuits and used to satisfy memory density rquirements greater than that provided by individual circuits mounted thereon, said module comprising: a plurality of discrete data memory circuits each organized to provide an individual string having length equal to an integer multiple of four bits, said circuits arranged to provide a combined data string having a length equal to the sum of the individual string lengths, each circuit including a signal line connected to control transfer of individual data strings; a plurality of data pins each associated with a different bit of the combined data string and connected to transfer a datum, associated with one of the individual strings, from one of the memory circuits for output from said module; a plurality of control pins with each signal line connected to a control pin to receive an external signal for initiating transfer of one of the individual data strings from one of the memory circuits; and an additional memory circuit having a plurality of additional signal lines and a plurality of additional data lines, with a first of the additional signal lines wired in common with the signal line of a first of the data memory circuits to render said additional circuit responsive to transfer a bit of data along one of the additional data lines when an individual data string is transferred from the first memory circuit; and a second of the additional signal lines wired in common with the signal line of a second of the data memory circuits to render said additional circuit responsive to transfer a bit of data along one of the additional data lines when an individual data string is transferred from the second memory circuit.
Claim 3
Dependent Claim 32 words
The module of Claim 1 wherein all of the memory circuits are dynamic random access memory circuits and said additional circuit includes four signal lines which control the transfer of parity data.
Claim 4
Dependent Claim 57 words
The module of Claim 1 wherein the discrete data memory circuits are electrically arranged in pairs to provide a data string length that is an integer multiple of eight bits, said plurality of data memory circuits further arranged to provide a combined data string having a length equal to the sum of the individual data string lengths.
Claim 5
Dependent Claim 83 words
The module of Claim 1 wherein the first of the additional signal lines is wired in common with the signal line of a third one of the data memory circuits to provide a data string length that is a multiple of nine bits and wherein the second of the individual data lines is wired in common with the signal line of a fourth one of the data memory circuits to also provide a data string length that is a multiple of nine bits.
Claim 6
Dependent Claim 24 words
The module of Claim 1 wherein there are an equal number of additional signal lines and additional data lines in the additional memory circuit.
Claim 7
Dependent Claim 18 words
The module of Claim 1 wherein the number of data lines in the additional memory circuit is four.
Claim 8
Dependent Claim 18 words
The module of Claim 1 wherein the number of signal lines in the additional memory circuit is four.
Claim 9
Dependent Claim 28 words
The module of Claim 1 wherein each additional data line is wired to associate a ninth data bit with each of eight bits in the combined data string.
Claim 10
Dependent Claim 28 words
The module of Claim 1 wherein the additional data lines are wired to associate one bit of parity data with every eight bits of the combined data word.

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