EP0419062A2
Expired / Lapsed
EP
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Electrode formed of semiconductor compounds and method of forming them
Assignee: Mitsubishi Chemical Corp
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Filing: 1990-08-29
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Granted: —
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Expires: 2010-08-29
Abstract
Abstract On the surface (2) of an n-type layer of Gal-xAlxAs (0 </= x </= 1) having n-type layer, an Au layer (13) is formed as a first layer, and alloying treatment is performed after a Ge layer (11), Ni layer (12) and Au layer (13) are sequentially formed, preferably of thicknesses: <TABLE> Thus, it is possible to form an ohmic electrode (14) which has low contact resistance and does not develop a ball-up phenomenon.
Inventors
- 👤 Toshihiko C/O Mitsubishi Kasei Polytec Co. Ibuka
- 👤 Masahiro C/O Mitsubishi Kasei Polytec Co Noguchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 17:25
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/60; H10D64/62
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
41 words
An ohmic electrode for Ga l-x Al x As (0 ≦ x ≦ 1) using Au, Ge and Ni as electrode materials, characterized in that the Ni content on the interface between electrode and semiconductor is 29 wt % or less.
Claim 2
Dependent Claim
41 words
An ohmic electrode for Ga l-x Al x As (0 ≦ x ≦ 1) using Au, Ge and Ni as electrode materials, characterized in that the Ni content on the interface between electrode and semiconductor is 29 wt % or less.
Claim 3
Dependent Claim
23 words
An electrode for a semiconductor compound according to Claim 1, wherein the Al component on electrode surface is 3 wt % or less.
Claim 4
Independent Claim
59 words
A method of forming an ohmic electrode for a Ga l-x Al x As (0 ≦ x ≦ 1) semiconductor compound, characterized in that an Au layer is formed as a first layer on the surface of the n -type layer, and an alloying treatment is performed after the Ge layer, Ni layer and Au layer are sequentially formed.
Claim 5
Independent Claim
59 words
A method of forming an ohmic electrode for a Ga l-x Al x As (0 ≦ x ≦ 1) semiconductor compound, characterized in that an Au layer is formed as a first layer on the surface of the n -type layer, and an alloying treatment is performed after the Ge layer, Ni layer and Au layer are sequentially formed.
Claim 6
Dependent Claim
61 words
A method according to Claim 3, wherein each of the films of the first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness: 1st layer Au 10 - 200 Å 2nd layer Ge 50 - 200 Å 3rd layer Ni 50 - 200 Å 4th layer Au 200 - 1000 Å
Claim 7
Dependent Claim
34 words
A method of forming a semiconductor electrode,characterized in that a pad for wire bonding consisting of Au or Al is formed on the ohmic electrode obtained by the method of Claim 3 or 4.
Claim 8
Dependent Claim
25 words
A method according to Claim 3, 4 or 5, wherein the ohmic electrode is formed by either electron beam deposition, resistance heating deposition or sputtering.
References Cited (Backward Citations)
No citation records indexed.
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