EP0417457A2
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Method of producing field effect transistor
Assignee: Seiko Instruments Inc
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Filing: 1990-08-01
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Granted: —
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Expires: 2010-08-01
Abstract
Abstract An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimension.
Inventors
- 👤 Naoto Saito
- 👤 Kenji Aoki
- 👤 Tadao Akamine
- 👤 Yoshikazu Kojima
- 👤 Masahiko Kinbara
- 👤 Kunihiro Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/027; H10D30/0275; H10D62/00; H10D62/01; H10D62/021; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
160 words
A method of producing an insulating gate field effect transistor comprising: the first step of sequentially forming a gate insulating film and a gate electrode on a semiconductor region of a first conductivity type; the second step of etching a part of the gate insulating film disposed on a pair of sections separated from one another by the gate electrode; the third step of removing an inert film disposed on the semiconductor region of the first conductivity type to expose an active face; the fourth step of applying to the active face a gas containing an impurity component of a second conductivity type to form an impurity adsorption layer containg impurity atoms or impurity compounds including at least the impurity atoms; and the fifth step of introducing the impurity into the semiconductor region of the first conductivity type from a diffusion source composed of the impurity adsorption layer to thereby form source and drain regions of the second conductivity type.
Claim 2
Independent Claim
160 words
A method of producing an insulating gate field effect transistor comprising: the first step of sequentially forming a gate insulating film and a gate electrode on a semiconductor region of a first conductivity type; the second step of etching a part of the gate insulating film disposed on a pair of sections separated from one another by the gate electrode; the third step of removing an inert film disposed on the semiconductor region of the first conductivity type to expose an active face; the fourth step of applying to the active face a gas containing an impurity component of a second conductivity type to form an impurity adsorption layer containg impurity atoms or impurity compounds including at least the impurity atoms; and the fifth step of introducing the impurity into the semiconductor region of the first conductivity type from a diffusion source composed of the impurity adsorption layer to thereby form source and drain regions of the second conductivity type.
Claim 3
Dependent Claim
38 words
A method according to claim 1; wherein the second step comprises selectively etching the gate insulating film through a mask composed of the gate electrode to expose a surface of the semiconductor region of the first conductivity type.
Claim 4
Dependent Claim
33 words
A method according to claim 1; wherein the second step comprises etching the gate insulating film and the semiconductor region within the pair oP sections separated from one another by the gate electrode.
Claim 5
Dependent Claim
58 words
A method according to claim 1; wherein the second step includes etching concurrently the semiconductor region within the pair of sections and the gate electrode, oxidizing an etched surface of the semiconductor region and gate electrode to form an oxide film, and leaving a part of the oxide film over the gate electrode to surround the gate electrode.
Claim 6
Dependent Claim
48 words
A method according to claim 1; wherein the fourth step comprises applying to the active face a gas containing a semiconductor component and another gas containing an impurity component of the second conductivity type to form an impurity adsorption layer containing the semiconductor component and the impurity component.
Claim 7
Dependent Claim
49 words
A method according to claim 1; wherein the fourth step includes applying to the active face a gas containing an impurity component of the second conductivity type to form an impurity adsorption layer composed of the adsorbed impurity, and forming an semiconductor epitaxial layer on the impurity adsorption layer.
Claim 8
Dependent Claim
56 words
A method according to claim 1; wherein the fourth step includes applying to the active face a gas containing an impurity component of the second conductivity type to form an impurity adsorption layer composed of the impurity, forming a semiconductor epitaxial layer on the adsorption layer, and forming an insulating layer on the semiconductor epitaxial layer.
Claim 9
Dependent Claim
47 words
A method according to claim 1; wherein the fourth step includes forming an epitaxial layer on the active face, and applying to the epitaxial layer a gas containing on impurity component of the second conductivity type to form an impurity adsorption layer composed of the adsorped impurity.
Claim 10
Dependent Claim
30 words
A method according to claim 1; wherein the fourth step includes forming repeatedly and alternatively an impurity adsorption layer and a semiconductor epitaxial layer in superposed relation to one another.
Claim 11
Dependent Claim
25 words
A method according to claim 1; wherein the fifth step comprises diffusing and activating the impurity by either of ramp anneal and radiation beam anneal.
Claim 12
Dependent Claim
33 words
A method according to claim 10; wherein the fourth step of forming an impurity adsorption layer and the fifth step of diffusing and activating the impurity are carried out repeatedly at least twice.
Claim 13
Dependent Claim
52 words
A method according to claim 1; wherein the fourth step comprises applying to an active face of the semiconductor substrate of the first conductivity type composed of an N type silicon substrate a diborane gas containing boron of P type impurity while heating the substrate to thereby form a boron adsorption layer.
Claim 14
Dependent Claim
36 words
A method according to claim 2; wherein an oxide film layer is formed to surround and cover an N⁺ type gate electrode, and thereafter an inert film is removed from the surface of the semiconductor region.
Claim 15
Dependent Claim
82 words
A method according to claim 13; wherein the first step comprises forming locally a field insulating film on a surface of a semiconductor substrate of the first conductivity type to define a device region and an isolation region, forming sequentially a gate insulating film and a polysilicon film on the semiconductor substrate formed with the field insulating film, doping an impurity into the polysilicon film, and patterning the impurity-doped polysilicon film to form an N⁺ type gate electrode in the device region.
Claim 16
Dependent Claim
56 words
A method according to claim 14; wherein the second step comprises thermally oxidizing concurrently the device region formed with an insulating film and the isolation region to form an oxide layer, and thereafter removing the oxide film from a pair of sections separated from one another by the N⁺ type gate electrode within the device region.
Claim 17
Dependent Claim
75 words
A method according to claim 14; wherein the second step comprises removing an insulating film selectively from a pair of sections separated from one another by the N⁺ type gate electrode within the device region, then forming an oxide film over the device region and isolation region by thermal oxidation, and thereafter removing selectively a part of the oxide film from the pair of sections separated from one another by the N⁺ type gate electrode.
Claim 18
Dependent Claim
46 words
A method according to claim 14; wherein the fourth step comprises applying to an active face of a semiconductor substrate of the first conductivity type composed of silicon a diborane gas containing an impurity component of boron to form an impurity adsorption layer composed of boron.
Claim 19
Dependent Claim
82 words
A method according to claim 2; wherein the first step comprises forming sequentially a field insulating film, a gate insulating film and a gate electrode on a surface of a semiconductor region of the first conductivity type, and wherein the fourth step comprises forming an impurity adsorption layer on the active face exposed on the surface of the semiconductor region, etching away a surface portion of the field insulating film, and thereafter forming a semiconductor epitaxial layer on the impurity adsorption layer.
Claim 20
Independent Claim
204 words
A method of producing a semiconductor device comprising: the first step of sequentially forming a gate insulating film and a gate electrode on a semiconductor region of a first conductivity type; the second step of removing an inert film disposed in a pair of sections separated from one another by the gate electrode on the semiconductor region of the first conductivity type to expose an active face; the third step of forming an insulating film spacer on opposite sides of the gate electrode; the fourth step of applying to the active face and a surface of the gate electrode a gas containing an impurity component of a second conductivity type to form an impurity adsorption layer containg impurity atoms or impurity compound including at least the impurity atoms; the fifth step of depositing a metal film on the impurity adsorption layer and then heating the same to form a metal silicide layer on the gate electrode and a source region and a drain region separated from one another by the gate electrode; the sixth step of etching away the metal film over the metal silicide; and effecting thermal treatment to activate the metal silicide formed on the source region, drain region and gate electrode.
Claim 21
Independent Claim
204 words
A method of producing a semiconductor device comprising: the first step of sequentially forming a gate insulating film and a gate electrode on a semiconductor region of a first conductivity type; the second step of removing an inert film disposed in a pair of sections separated from one another by the gate electrode on the semiconductor region of the first conductivity type to expose an active face; the third step of forming an insulating film spacer on opposite sides of the gate electrode; the fourth step of applying to the active face and a surface of the gate electrode a gas containing an impurity component of a second conductivity type to form an impurity adsorption layer containg impurity atoms or impurity compound including at least the impurity atoms; the fifth step of depositing a metal film on the impurity adsorption layer and then heating the same to form a metal silicide layer on the gate electrode and a source region and a drain region separated from one another by the gate electrode; the sixth step of etching away the metal film over the metal silicide; and effecting thermal treatment to activate the metal silicide formed on the source region, drain region and gate electrode.
Claim 22
Independent Claim
210 words
A method of producing a semiconductor device, comprising: the first step of sequentially forming an gate insulating film and a gate electrode on a surface of a semiconductor region of a first conductivity type; the second step forming an insulating film spacer on opposite sides of the gate electrode; the third step of depositing a metal film on an active face of the semiconductor region and on the gate electrode, and thereafter heating the metal film to form a metal silicide layer on the gate electrode and on a pair of sections separated from one another by the gate electrode on the surface of the semiconductor region; the fourth step of etching away the metal film on the metal silicide layer; the fifth step of removing an inert film from the etched surface of the metal silicide to expose an active face; the sixth step of applying to the active face a fas containing an impurity component of a second conductivity type to form an adsorption layer composed of the adsorbed impurity; and the seventh step of introducing the impurity into the semiconductor region of the first conductivity type from a diffusion source composed of the impurity adsorption layer to form source and drain regions of a second conductivity type.
Claim 23
Independent Claim
210 words
A method of producing a semiconductor device, comprising: the first step of sequentially forming an gate insulating film and a gate electrode on a surface of a semiconductor region of a first conductivity type; the second step forming an insulating film spacer on opposite sides of the gate electrode; the third step of depositing a metal film on an active face of the semiconductor region and on the gate electrode, and thereafter heating the metal film to form a metal silicide layer on the gate electrode and on a pair of sections separated from one another by the gate electrode on the surface of the semiconductor region; the fourth step of etching away the metal film on the metal silicide layer; the fifth step of removing an inert film from the etched surface of the metal silicide to expose an active face; the sixth step of applying to the active face a fas containing an impurity component of a second conductivity type to form an adsorption layer composed of the adsorbed impurity; and the seventh step of introducing the impurity into the semiconductor region of the first conductivity type from a diffusion source composed of the impurity adsorption layer to form source and drain regions of a second conductivity type.
Claim 24
Dependent Claim
69 words
A field effect transistor comprising: a silicon semiconductor substrate of N type; a gate insulating film formed on a part of a surface of the semiconductor substrate; a gate electrode of N⁺ type formed on the gate insulating film; and a source region and a drain region separated from one another by the gate electrode and disposed below a surface level of the semiconductor substrate under the gate electrode.
Claim 25
Dependent Claim
69 words
A field effect transistor comprising: a silicon semiconductor substrate of N type; a gate insulating film formed on a part of a surface of the semiconductor substrate; a gate electrode of N⁺ type formed on the gate insulating film; and a source region and a drain region separated from one another by the gate electrode and disposed below a surface level of the semiconductor substrate under the gate electrode.
Claim 26
Dependent Claim
98 words
A field effect transistor comprising: a semiconductor region of a first conductivity type; a source region and drain region formed on a surface of the semiconductor region in spaced relation from each other; a channel region disposed between the source region and the drain region; an gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film, wherein a surface level of the source and drain regions is disposed above a surface level of the semiconductor region and below an interface level between the gate insulating film and the gate electrode.
Claim 27
Dependent Claim
98 words
A field effect transistor comprising: a semiconductor region of a first conductivity type; a source region and drain region formed on a surface of the semiconductor region in spaced relation from each other; a channel region disposed between the source region and the drain region; an gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film, wherein a surface level of the source and drain regions is disposed above a surface level of the semiconductor region and below an interface level between the gate insulating film and the gate electrode.
References Cited (Backward Citations)
JPS59153978A
Cited
JPS61209575A
Cited
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