EP0416166A1
Expired / Lapsed
EP
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Methods of making a heterojunction bipolar transistor having a separate collector contact
Assignee: Siemens AG
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Filing: 1989-09-08
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Granted: —
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Expires: 2009-09-08
Abstract
Abstract Planar heterojunction bipolar transistor in which the base/emitter region is separated by a collector separation trench (18) from the collector terminal, and method of producing same. <IMAGE>
Inventors
- 👤 Peter Dr. Zwicknagl
- 👤 Joachim Dipl.-Ing. Hoepfner
- 👤 Lothar Dipl.-Phys. Schleicher
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 13:26
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D64/00; H10D64/01; H10D64/011; H10D62/00; H10D62/80; H10D62/82; H10D62/824
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References Cited (Backward Citations)
DE3512841A1
Cited
EP0297886A2
Cited
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