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EP0410465A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Solid state image pickup device having photo-shield plate in contact with photo-electric converting region via Schottky barrier

Assignee: NEC Corp
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Filing: 1990-07-26
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Granted: —
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Expires: 2010-07-26
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Abstract

Abstract A solid state image pickup device is fabricated on a semiconductor substrate (1) and comprises a well (2) formed in a surface portion of the semiconductor substrate, photo-electric converting regions (3a to 3f) arranged in rows and columns and converting parts of an optical radia­tion into electric charges, respectively, charge transfer­ring regions (4a and 4b) associated with the columns of the photo-electric converting regions, respectively, and con­veying the electric charges, charge transferring electrodes (9) allowing the charge transferring regions to convey the electric charges, and a metallic photo-shield plate (11) preventing the charge transferring regions from the optical radiation and exposing the photo-electric converting re­gions to the parts of the optical radiation, in which the metallic photo-shield plate is in contact with the photo­electric converting regions for forming Schottky barriers therebetween and excess electric charges flow into the metallic photo-shield plate over the Schottky barriers.

Inventors

  • 👤 Kazuhisa C/O Nec Corporation Nagaya

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 22:40
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H04; H04N; H04N25/00; H04N25/60; H04N25/62; H04N25/621; H10F39/153

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 227 words
A solid state image pickup device fabricated on a semiconductor substrate (1) of a first conductivity type, comprising: a) a well (2) having a second conductivity type opposite to said first conductivity type and formed in a surface portion of said semiconductor substrate; b) a plurality of photo-electric converting regions (3a to 3f) of said first conductivity type arranged in at least one line and converting parts of an optical radiation into electric charges, respectively; c) a plurality of charge transferring regions (4a and 4b) of said first conductivity type associated with the line of said photo-electric con­verting regions, respectively, and conveying said electric charges, each of said charge transferring regions being spaced apart from the associated line of said photo-elec­tric converting regions by a channel forming region (6); d) charge transferring means (9) provided over said charge transferring regions and allowing said charge transferring regions to convey said electric charges; and e) a metallic photo-shield plate (11) preventing said charge transferring regions each being contiguous to said channel forming region from said optical radiation and exposing said photo-electric converting regions to the parts of said optical radiation, characterized in that said metallic photo-shield plate is in contact with said photo-electric converting regions for forming Schottky barriers therebe­tween, and in that and in which excess electric charges overflow beyond said Schottky barrier into said metallic photo-shield plate.
Claim 2
Dependent Claim 227 words
A solid state image pickup device fabricated on a semiconductor substrate (1) of a first conductivity type, comprising: a) a well (2) having a second conductivity type opposite to said first conductivity type and formed in a surface portion of said semiconductor substrate; b) a plurality of photo-electric converting regions (3a to 3f) of said first conductivity type arranged in at least one line and converting parts of an optical radiation into electric charges, respectively; c) a plurality of charge transferring regions (4a and 4b) of said first conductivity type associated with the line of said photo-electric con­verting regions, respectively, and conveying said electric charges, each of said charge transferring regions being spaced apart from the associated line of said photo-elec­tric converting regions by a channel forming region (6); d) charge transferring means (9) provided over said charge transferring regions and allowing said charge transferring regions to convey said electric charges; and e) a metallic photo-shield plate (11) preventing said charge transferring regions each being contiguous to said channel forming region from said optical radiation and exposing said photo-electric converting regions to the parts of said optical radiation, characterized in that said metallic photo-shield plate is in contact with said photo-electric converting regions for forming Schottky barriers therebe­tween, and in that and in which excess electric charges overflow beyond said Schottky barrier into said metallic photo-shield plate.
Claim 3
Dependent Claim 58 words
A solid state image pickup device as set forth in claim 1, in which said solid state image pickup device further comprises a contact region of said second conduc­tivity type formed in each of said photo-electric convert­ing regions and in which said metallic photo-shield plate is in contact with said contact region for forming a Schot­tky barrier therebetween.
Claim 4
Dependent Claim 95 words
A solid state image pickup device as set forth in claim 1, in which a predetermined number of said photo-­electric converting regions are associated with each of said charge transferring region and in which a channel stopper region of said second conductivity type is formed on both sides of a combination of said photo-electric converting regions and said associated charge transferring region, wherein said channel stopper is in contact with a spacer region formed in a surface portion of each photo-­electric converting region, thereby propagating a voltage level of said well to said spacer region.
Claim 5
Dependent Claim 40 words
A solid state image pickup device as set forth in claim 1, 2 or 3, in which said solid state image pickup device selectively enters at least a charge accumulating mode of operation and an electronic shutter mode of opera­tion.

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