Solid state image pickup device having photo-shield plate in contact with photo-electric converting region via Schottky barrier
Abstract
Abstract A solid state image pickup device is fabricated on a semiconductor substrate (1) and comprises a well (2) formed in a surface portion of the semiconductor substrate, photo-electric converting regions (3a to 3f) arranged in rows and columns and converting parts of an optical radiation into electric charges, respectively, charge transferring regions (4a and 4b) associated with the columns of the photo-electric converting regions, respectively, and conveying the electric charges, charge transferring electrodes (9) allowing the charge transferring regions to convey the electric charges, and a metallic photo-shield plate (11) preventing the charge transferring regions from the optical radiation and exposing the photo-electric converting regions to the parts of the optical radiation, in which the metallic photo-shield plate is in contact with the photoelectric converting regions for forming Schottky barriers therebetween and excess electric charges flow into the metallic photo-shield plate over the Schottky barriers.
Inventors
- 👤 Kazuhisa C/O Nec Corporation Nagaya
Bibliographic Details
Claims Analysis
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