Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
279 words
A bipolar transistor comprising: a collector region (2,51) consisting of a first semiconductor region of a first conductivity type, said collector region being formed in contact with a surface of a semiconductor layer; a base region (6,34,52) consisting of a second semiconductor region of a second conductivity type formed within said collector region to be in contact with the surface of said semiconductor layer; an emitter region (8,38,53) consisting of a third semiconductor region of the first conductivity type formed within said base region to be in contact with the surface of said semiconductor layer; a base contact region (40,55) contacting the base region and being of the same conductivity type but having a higher concentration than the base region, the width of the base contact region being constant, a collector contact region (39,54) contacting the collector region and being of the same conductivity type but having a higher concentration than the collector region, the width of the collector contact region being constant; collector and base electrodes (19A,19B,32A′,32B′) connected to said collector and base contact regions at opposite edges of a single opening formed in a field insulating film (17,18) covering the surface of said semiconductor layer, said collector and base electrodes consisting of a conductor; an emitter electrode (37,56) connected to said emitter region and consisting of a conductor; a first insulating interlayer (33) formed between said collector electrode and said emitter electrode; and a second insulating interlayer (33) formed beween said emitter electrode and said base electrode, wherein a distance between said collector and emitter electrodes on the surface of said semiconductor layer is substantially the same as that between said emitter electrode and said base electrode.
Claim 2
Dependent Claim
279 words
A bipolar transistor comprising: a collector region (2,51) consisting of a first semiconductor region of a first conductivity type, said collector region being formed in contact with a surface of a semiconductor layer; a base region (6,34,52) consisting of a second semiconductor region of a second conductivity type formed within said collector region to be in contact with the surface of said semiconductor layer; an emitter region (8,38,53) consisting of a third semiconductor region of the first conductivity type formed within said base region to be in contact with the surface of said semiconductor layer; a base contact region (40,55) contacting the base region and being of the same conductivity type but having a higher concentration than the base region, the width of the base contact region being constant, a collector contact region (39,54) contacting the collector region and being of the same conductivity type but having a higher concentration than the collector region, the width of the collector contact region being constant; collector and base electrodes (19A,19B,32A′,32B′) connected to said collector and base contact regions at opposite edges of a single opening formed in a field insulating film (17,18) covering the surface of said semiconductor layer, said collector and base electrodes consisting of a conductor; an emitter electrode (37,56) connected to said emitter region and consisting of a conductor; a first insulating interlayer (33) formed between said collector electrode and said emitter electrode; and a second insulating interlayer (33) formed beween said emitter electrode and said base electrode, wherein a distance between said collector and emitter electrodes on the surface of said semiconductor layer is substantially the same as that between said emitter electrode and said base electrode.
Claim 3
Dependent Claim
38 words
A transistor according to claim 1, wherein the distance between said collector and emitter electrodes on the surface of said semiconductor layer and the distance between said emitter and base electrodes are not more than 0.5 µm each.
Claim 4
Dependent Claim
29 words
A transistor according to claim 1, wherein said collector, emitter, and base electrodes are made of a material selected from the group consisting of doped polysilicon and doped silicide.
Claim 5
Dependent Claim
23 words
A transistor according to claim 1, wherein said collector and base electrodes extend from edges of said opening onto said field insulating film.
Claim 6
Dependent Claim
14 words
A transistor according to claim 1, wherein said semiconductor layer comprises a semiconductor substrate.