Switchable semiconductor power device

Abstract

Abstract In an MOS-controlled thyristor MCT, the second base layer (16) is brought to the cathode-side surface of the semiconductor substrate (1) between the MCT unit cells. Disposed at this point is a collector region (20) which is oppositely doped to the second base layer (16), is connected to the cathode contact (2) and extends into the second base layer (16). <??>Together with the second base layer (16) and an additional, oppositely situated anode short circuit, the collector region (20) forms an inverse diode structure (11) which makes an external free-wheeling diode unnecessary when switching inductive loads. <IMAGE>

Inventors

• 👤 Friedhelm Dr. Bauer

Bibliographic Details