EP0407933A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Resin sealed semiconductor device with improved thermal stress resistance
Assignee: NEC Corp
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Filing: 1990-07-09
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Granted: —
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Expires: 2010-07-09
Abstract
Abstract A wiring (4a) formed in the uppermost level of a semiconductor device is fixed by connecting it to dummy wirings (7) provided in a lower level via through holes (8) in order to suppress a shear deformation of the uppermost level wiring. A semiconductor device ordinarily generates large thermal stresses for changes in the temperature due to the differences in the coefficients of thermal expansion of its component materials. These thermal stresses generate a large strain due to stresses especially in the uppermost level wirings or bonding wirings, which may lead to the disconnections of the wirings. In order to present such disconnections, the uppermost level wirings of the present invention are connected to dummy through holes and wirings to form anchors in order to suppress the deformation of the uppermost level wirings.
Inventors
- 👤 Takao C/O Nec Corporation Adachi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 23:05
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/90; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
196 words
A semiconductor device which is attached on a lead frame member and sealed with a resin sealing member, comprising: a semiconductor substrate in which a plurality of circuit elements are formed; a first insulating layer on a main surface of said substrate; first wiring layers formed on the surface of said first insulating layer and electrically connected to said circuit elements directly or indirectly; at least one independent, islandlike wiring layer formed on the surface of said first insulating layer without connection to any of said first wiring layers; a second insulating layer formed on said first insulating layer and covering said first wiring layers and said islandlike wiring layer and having at least one through hole exposing a part of the surface of said islandlike wiring layer; bonding pads formed on the surface of said second insulating layer; and a second wiring layer formed on the surface of said second insulating layer and connected to one of said bonding pads directly and to said at least one islandlike wiring layer through said at least one through hole, and second wiring layer being electrically connected to at least one of said circuit elements directly or indirectly.
Claim 2
Dependent Claim
196 words
A semiconductor device which is attached on a lead frame member and sealed with a resin sealing member, comprising: a semiconductor substrate in which a plurality of circuit elements are formed; a first insulating layer on a main surface of said substrate; first wiring layers formed on the surface of said first insulating layer and electrically connected to said circuit elements directly or indirectly; at least one independent, islandlike wiring layer formed on the surface of said first insulating layer without connection to any of said first wiring layers; a second insulating layer formed on said first insulating layer and covering said first wiring layers and said islandlike wiring layer and having at least one through hole exposing a part of the surface of said islandlike wiring layer; bonding pads formed on the surface of said second insulating layer; and a second wiring layer formed on the surface of said second insulating layer and connected to one of said bonding pads directly and to said at least one islandlike wiring layer through said at least one through hole, and second wiring layer being electrically connected to at least one of said circuit elements directly or indirectly.
Claim 3
Dependent Claim
141 words
A semiconductor device comprising: a semiconductor silicon substrate with circuit elements formed thereon; a lead frame on which is mounted said silicon substrate; a resin member for sealing said silicon substrate; a first interlayer film formed on said silicon substrate; a dummy wiring formed on top of said first interlayer film, a second interlayer film formed on top of said first interlayer film and said dummy wiring; a through hole formed in said second interlayer film on top of said dummy wiring; an upper wiring layer formed on top of said second interlayer film; and a lower wiring layer formed between said first interlayer film and said upper wiring layer; whereby at least a part of said upper wiring layer and said dummy wiring being connected via said through hole; and said dummy wiring being independent of said lower wiring layer.
Claim 4
Dependent Claim
141 words
A semiconductor device comprising: a semiconductor silicon substrate with circuit elements formed thereon; a lead frame on which is mounted said silicon substrate; a resin member for sealing said silicon substrate; a first interlayer film formed on said silicon substrate; a dummy wiring formed on top of said first interlayer film, a second interlayer film formed on top of said first interlayer film and said dummy wiring; a through hole formed in said second interlayer film on top of said dummy wiring; an upper wiring layer formed on top of said second interlayer film; and a lower wiring layer formed between said first interlayer film and said upper wiring layer; whereby at least a part of said upper wiring layer and said dummy wiring being connected via said through hole; and said dummy wiring being independent of said lower wiring layer.
Claim 5
Dependent Claim
26 words
The semiconductor device as claimed in claim 2, wherein said upper wiring layer is a lead line that connects the circuit element and the bonding pad.
Claim 6
Dependent Claim
22 words
The semiconductor device as claimed in claim 2, wherein said upper wiring layer is a power supply wire or a ground wiring.
Claim 7
Dependent Claim
33 words
The semiconductor device as claimed in claim 2, wherein there are provided a plurality of dummy wirings, with the respective wirings being connected to one upper wiring layer via the corresponding through holes.
Claim 8
Dependent Claim
27 words
The semiconductor device as claimed in claim 1, wherein a plurality of said islandlike wiring layers are connected to said second wiring layer through respective through holes.
Claim 9
Dependent Claim
23 words
The semiconductor device as claimed in claim 2, wherein said dummy wiring and said lower wiring layer are formed of the same material.
References Cited (Backward Citations)
No citation records indexed.
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