EP0407169A2 — Electron cyclotron resonance (ECR) plasma etching…

Claim 1

Independent Claim 91 words

An electron cyclotron resonance (ECR) plasma etching process using an ECR etching apparatus having a plasma generation chamber, a reaction chamber connected with said plasma generation chamber, and gas supply entrances provided in the respective chambers, comprising the steps of: directing microwaves into said plasma generation chamber, applying a magnetic field to said plasma generation chamber, supplying a first gas which is used for generating plasma, to said plasma generation chamber, and supplying a second gas which is used for generating a deposit of a protective film to said reaction chamber.

Claim 2

Dependent Claim 91 words

An electron cyclotron resonance (ECR) plasma etching process using an ECR etching apparatus having a plasma generation chamber, a reaction chamber connected with said plasma generation chamber, and gas supply entrances provided in the respective chambers, comprising the steps of: directing microwaves into said plasma generation chamber, applying a magnetic field to said plasma generation chamber, supplying a first gas which is used for generating plasma, to said plasma generation chamber, and supplying a second gas which is used for generating a deposit of a protective film to said reaction chamber.

Claim 3

Dependent Claim 67 words

An ECR plasma etching process as claimed in claim 1, wherein said first gas which is used for generating plasma is constituted by one or more of argon (Ar), oxygen (O₂), nitrogen (N₂), helium (He), xenon (Xe), krypton (Kr), chlorine (C₁₂), fluorine (F₂), nitrogen trifluoride (NF₃), sulphur hexafluoride (SF₆), bromine (Br₂), hydrogen bromide (HBr), nitrogen dioxide (NO₂), carbon dioxide (CO₂), carbon monoxide (CO) and nitrogen monoxide (NO).

Claim 4

Dependent Claim 63 words

An ECR plasma etching process as claimed in claim 1 or 2, wherein the material to be etched is aluminium, an aluminium alloy, a resist, a polymer compound, a silicon, an alloy or compound of silicon and a refractory metal, a high refractory metal, a stacked body formed of an alloy or compound of silicon and a refractory metal, or a refractory metal.

Claim 5

Dependent Claim 109 words

An ECR plasma etching process as claimed in claim 1, wherein the material to be etched is a resist or a high polymer compound, said first gas which is used for generating said plasma is oxygen, carbon dioxide or a mixed gas of oxygen and carbon dioxide, and said second gas which is used for generating said deposit is constituted by one or more of carbon dioxide (CO₂), chlorine (Cl₂), boron trichloride (BCl₃), silicon tetrachloride (SiCl₄), silicon tetrafluoride (SiF₄), silicon tetrabromide (SiBr₄), titanium tetrachloride (TiCl₄), hydrogen bromide (HBr), bromine (Br₂), sulphur dioxide (SO₂), disulphur dichloride (S₂Cl₂), sulphur dichloride (SCl₂), carbon monoxide (CO), hydrogen fluoride (HF), and hydrogen chloride (HCl).

Claim 6

Dependent Claim 29 words

An ECR etching process as claimed in any one of claims 1 to 4, wherein water is added to said second gas which is used for generating said deposit.

Claim 7

Dependent Claim 110 words

An electron cyclotron resonance (ECR) plasma etching apparatus comprising: a plasma generation chamber having a microwave introduction window and a first supply entrance for a first gas which is a plasma generating gas, and having electromagnetic coils wound therearound, and a reaction chamber communicating with said plasma generation chamber having a second supply entrance for a second gas which is a gas for generating a deposit to form a side etching prevention film and having a susceptor on which is to be provided a substrate, the main surface of which is positioned to face a plasma flow which flows, when the apparatus is in use, from said plasma generation chamber.

Claim 8

Dependent Claim 110 words

An electron cyclotron resonance (ECR) plasma etching apparatus comprising: a plasma generation chamber having a microwave introduction window and a first supply entrance for a first gas which is a plasma generating gas, and having electromagnetic coils wound therearound, and a reaction chamber communicating with said plasma generation chamber having a second supply entrance for a second gas which is a gas for generating a deposit to form a side etching prevention film and having a susceptor on which is to be provided a substrate, the main surface of which is positioned to face a plasma flow which flows, when the apparatus is in use, from said plasma generation chamber.

Claim 9

Dependent Claim 79 words

An ECR plasma etching apparatus as claimed in claim 6, wherein including a source of a first gas which is used for generating plasma and which is constituted by one or more of argon (Ar), oxygen (O₂), carbon dioxide (CO₂), carbon monoxide (CO), nitrogen (N₂), helium (He), xenon (Xe), krypton (Kr), chlorine (Cl₂), fluorine (F₂) nitrogen trifluoride (NF₃), sulphur hexafluoride (SF₆), bromine (Br₂), hydrogen bromide (HBr), nitrogen dioxide (NO₂), nitrogen monoxide (NO), hydrogen fluoride (HF), and hydrogen chloride (HCl).

Claim 10

Dependent Claim 121 words

An ECR plasma etching apparatus as claimed in claim 6, which, when the material to be etched is a resist or a high polymer compound, includes a source of a first gas for generating said plasma and which is oxygen, carbon dioxide or a mixed gas of oxygen and carbon dioxide and which includes a source of a second gas which is a gas for generating said deposit and which is constituted by one or more of carbon dioxide (CO₂), carbon monoxide (CO), chlorine (Cl₂), boron trichloride (BCl₃), silicon tetrachloride (SiCl₄), silicon tetrafluoride (SiF₄), silicon tetrabromide (SiBr₄), titanium tetrachloride (TiCl₄), hydrogen bromide (HBr), bromine (Br₂), sulphur dioxide (SO₂), disulphur dichloride (S₂Cl₂), sulphur dichloride (SCl₂), hydrogen fluoride (HF), and hydrogen chloride (HCl).

Claim 11

Dependent Claim 35 words

An ECR plasma etching apparatus as claimed in any one of claims 6 to 8, and including a source of water to be added to the second gas which is used for generating said deposit.

Claim 12

Dependent Claim 105 words

An electron cyclotron resonance (ECR) plasma etching apparatus comprising: a plasma generation chamber having a microwave introduction window and a gas supply entrance and having electromagnetic coils wound therearound, and a reaction chamber communicating with said plasma generation chamber and having a susceptor on which is provided, in use, a substrate, the main surface of which susceptor faces the plasma flow which flows, when the apparatus is in use, from said plasma generation chamber, said gas supply entrance being provided in a side wall of said plasma generation chamber spaced apart from said microwave introduction window, said side wall being parallel to said plasma flow.

Claim 13

Dependent Claim 105 words

An electron cyclotron resonance (ECR) plasma etching apparatus comprising: a plasma generation chamber having a microwave introduction window and a gas supply entrance and having electromagnetic coils wound therearound, and a reaction chamber communicating with said plasma generation chamber and having a susceptor on which is provided, in use, a substrate, the main surface of which susceptor faces the plasma flow which flows, when the apparatus is in use, from said plasma generation chamber, said gas supply entrance being provided in a side wall of said plasma generation chamber spaced apart from said microwave introduction window, said side wall being parallel to said plasma flow.

Claim 14

Dependent Claim 28 words

An electron cyclotron resonance (ECR) plasma etching apparatus as claimed in claim 10, wherein said gas supply entrance is provided in an internal guide covering said side wall.

Electron cyclotron resonance (ECR) plasma etching process and ECR plasma etching apparatus

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag