EP0404095A2
Expired / Lapsed
EP
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Integratable power transistor with optimization of direct secondary breakdown phenomena
Assignee: STMicroelectronics SRL
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Filing: 1990-06-20
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Granted: —
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Expires: 2010-06-20
Abstract
Abstract An integratable power transistor with optimization of direct secondary breakdown phenomena which comprises a plurality of elementary transistors which are arranged side by side and comprise a plurality of cells (30), each of which is formed by an emitter region (16) surrounded by base (17) and collector (18) regions, with the emitter regions (16) arranged physically separated. According to the invention, the base regions (17) are also arranged physically separated and are mutually connected by resistive elements (27).
Inventors
- 👤 Edoardo Botti
- 👤 Aldo Torazzina
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 10:21
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/121; H10D84/125; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/17; H10D62/177
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
68 words
Integratable power transistor with optimization of direct secondary breakdown phenomena, comprising a plurality of elementary transistors which are arranged side by side and comprise a plurality of cells, each of which is formed by an emitter region surrounded by base and collector regions, with the emitter regions arranged physically separated, characterized in that said base regions are also arranged physically separated and are mutually connected by resistive elements.
Claim 2
Dependent Claim
68 words
Integratable power transistor with optimization of direct secondary breakdown phenomena, comprising a plurality of elementary transistors which are arranged side by side and comprise a plurality of cells, each of which is formed by an emitter region surrounded by base and collector regions, with the emitter regions arranged physically separated, characterized in that said base regions are also arranged physically separated and are mutually connected by resistive elements.
Claim 3
Dependent Claim
18 words
Power transistor according to claim 1, characterized in that said resistive elements are formed by the base diffusion.
Claim 4
Dependent Claim
17 words
Power transistor according to claim 1, characterized in that said resistive elements are made of polycrystalline silicon.
Claim 5
Dependent Claim
61 words
Power transistor according to one or more of the preceding claims, characterized in that said emitter regions have a reduced area, in particular an area which has such a value that at the collector current for which each of said cells can be subject to breakdown phenomena the current gain is at the most equal to half of its peak value.
References Cited (Backward Citations)
No citation records indexed.
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