EP0403293A2
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EP
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Method of manufacturing III-V group compound semiconductor device
Assignee: Toshiba Corp
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Filing: 1990-06-14
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Granted: —
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Expires: 2010-06-14
Abstract
Abstract A magnesium-doped p-type III-V Group compound semiconductor layer can be formed by metal organic chemical vapor deposition, by reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Inventors
- 👤 Hatano C/O Intellectual Property Division Ako
- 👤 Toshihide C/O Intellectual Property Div. Izumiya
- 👤 Yasuo C/O Intellectual Property Division Ohba
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 11:28
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H10H20/01; H10H20/011; H10H20/013; H10H20/0137; H10H20/811; H10H20/812; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/227; H01S5/2275; H01S5/305; H01S5/3054; H01S5/3063; H01S5/32308; H01S5/32325; H01S5/32391; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918; Y10S438/925
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
52 words
In a method of manufacturing a III-V Group compound semiconductor device, including the step of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, the improvement comprises using an adduct of an organic metal compound containing magnesium with another compound as a doping source of magnesium.
Claim 2
Dependent Claim
52 words
In a method of manufacturing a III-V Group compound semiconductor device, including the step of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, the improvement comprises using an adduct of an organic metal compound containing magnesium with another compound as a doping source of magnesium.
Claim 3
Dependent Claim
27 words
The method according to claim 1, characterized in that said another compound is an organic compound containing a Group III or Group V element, other than magnesium.
Claim 4
Dependent Claim
32 words
The method according to claim 1, characterized in that said adduct is represented by a formula: Mg(E(R)₄)₂ where each R represents an alkyl group, and E represents an aluminum or nitrogen atoms.
Claim 5
Dependent Claim
21 words
The method according to claim 3, characterized in that each R is an alkyl group having 1 to 4 carbon atoms.
Claim 6
Dependent Claim
15 words
The method according to claim 4, characterized in that each R is a methyl group.
Claim 7
Dependent Claim
32 words
The method according to claim 1, characterized in that said adduct is represented by a formula: RMg(E(R)₄) where each R represents an alkyl group, and E represents an aluminum or nitrogen atom.
Claim 8
Dependent Claim
21 words
The method according to claim 6, characterized in that each R is an alkyl group having 1 to 4 carbon atoms.
Claim 9
Dependent Claim
29 words
The method according to claim 1, characterized in that trimethyl gallium, triethylgallium, trimethylaluminum, triethylaluminum, trimethylboron, triethylboron, diborane, or trimethylindium is used as a source of the Group III element.
Claim 10
Dependent Claim
24 words
The method according to claim 1, characterized in that phosphine, arsine, ammonia, or hydrazine is used as a source of the Group V element.
Claim 11
Dependent Claim
28 words
The method according to claim 1, characterized in that said formation of the p-type compound semiconductor layer is conducted at a reduced pressure of 25 to 300 Torr.
Claim 12
Dependent Claim
26 words
The method according to claim 1, characterized in that said formation of the p-type compound semiconductor layer is conducted at a temperature of 500 to 1150°C.
Claim 13
Dependent Claim
27 words
The method according to claim 11, characterized in that said formation of a p-type compound semiconductor layer is conducted at a temperature of not more than 650°C.
Claim 14
Independent Claim
63 words
A method of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, comprising reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Claim 15
Independent Claim
63 words
A method of forming a magnesium-doped p-type III-V Group compound semiconductor layer by metal organic chemical vapor deposition, comprising reacting, in a vapor phase, at least one compound of a Group III element with at least one compound of a Group V element, in the presence of an adduct of an organic magnesium compound with another compound as a doping source of magnesium.
Claim 16
Dependent Claim
27 words
The method according to claim 13, characterized in that said another compound is an organic compound containing a Group III or Group V element, other than magnesium.
Claim 17
Dependent Claim
32 words
The method according to claim 13, characterized in that said adduct is represented by a formula: Mg(E(R)₄)₂ where each R represents an alkyl group, and E represents an aluminum or nitrogen atoms.
Claim 18
Dependent Claim
21 words
The method according to claim 15, characterized in that each R is an alkyl group having 1 to 4 carbon atoms.
Claim 19
Dependent Claim
15 words
The method according to claim 16, characterized in that each R is a methyl group.
Claim 20
Dependent Claim
32 words
The method according to claim 13, characterized in that said adduct is represented by a formula: RMg(E(R)₄) where each R represents an alkyl group, and E represents an aluminum or nitrogen atom.
Claim 21
Dependent Claim
21 words
The method according to claim 18, characterized in that each R is an alkyl group having 1 to 4 carbon atoms.
Claim 22
Dependent Claim
29 words
The method according to claim 13, characterized in that trimethyl gallium, triethylgallium, trimethylaluminum, triethylaluminum, trimethylboron, triethylboron, diborane, or trimethylindium is used as said compound of the Group III element.
Claim 23
Dependent Claim
24 words
The method according to claim 13, characterized in that phosphine, arsine, ammonia, or hydrazine is used as said compound of the Group V element.
Claim 24
Dependent Claim
23 words
The method according to claim 13, characterized in that said reaction layer is conducted at a reduced pressure of 25 to 300 Torr.
Claim 25
Dependent Claim
20 words
The method according to claim 13, characterized in that said reaction is conducted at a temperature of 500 to 1150°C.
Claim 26
Dependent Claim
21 words
The method according to claim 23, characterized in that said reaction is conducted at a temperature of not more than 650°C.
References Cited (Backward Citations)
No citation records indexed.
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