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EP0403050A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Fabricating electrical contacts in semiconductor devices

Assignee: STMicroelectronics Ltd
•
Filing: 1990-03-16
•
Granted: —
•
Expires: 2010-03-16
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Abstract

Abstract A method of fabricating an electrical contact in a semiconductor device, the method comprising the steps of:- (a) providing on an underlying silicon substrate (2) a reflowable interlevel dielectric material (14) having a contact opening exposing a contact region of the silicon substrate; (b) heating the silicon substrate and the interlevel dielectric material by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer (20) in the contact region and to reflow the dielectric material; (c) depositing a layer of transition metal (28) over the reflowed dielectric material and the control layer; and (d) converting at least part of the transition metal layer into a metallurgic barrier.

Inventors

  • 👤 Paul Anthony Hunt
  • 👤 Ian Michael Liles
  • 👤 David Ralph Guite

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 21:26
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P95/00

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 108 words
A method of fabricating an electrical contact in a semiconductor device, the method comprising the steps of:- (a) providing on an underlying silicon substrate a reflowable interlevel dielectric material having a contact opening exposing a contact region of the silicon substrate; (b) heating the silicon substrate and the interlevel dielectric material by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer in the contact region and to reflow the dielectric material; (c) depositing a layer of transition metal over the reflowed dielectric material and the control layer; and (d) converting at least part of the transition metal layer into a metallurgic barrier.
Claim 2
Independent Claim 108 words
A method of fabricating an electrical contact in a semiconductor device, the method comprising the steps of:- (a) providing on an underlying silicon substrate a reflowable interlevel dielectric material having a contact opening exposing a contact region of the silicon substrate; (b) heating the silicon substrate and the interlevel dielectric material by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer in the contact region and to reflow the dielectric material; (c) depositing a layer of transition metal over the reflowed dielectric material and the control layer; and (d) converting at least part of the transition metal layer into a metallurgic barrier.
Claim 3
Dependent Claim 31 words
A method according to claim 1 further comprising the steps of depositing an interconnect layer including aluminium over the metallurgic barrier and depositing a capping metal layer over the interconnect layer.
Claim 4
Dependent Claim 13 words
A method according to claim 2 wherein the capping metal layer comprises titanium.
Claim 5
Independent Claim 22 words
A method according to any one of claims 1 to 3, wherein the reflowable dielectric material comprises a boron phosphorous silicon glass.
Claim 6
Independent Claim 15 words
A method according to any foregoing claim wherein the layer of transition metal comprises titanium.
Claim 7
Independent Claim 14 words
A method according to any foregoing claim wherein the metallurgic barrier comprises titanium nitride.

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