EP0402897A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device having elements isolated by trench
Assignee: Toshiba Corp
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Filing: 1990-06-13
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Granted: —
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Expires: 2010-06-13
Abstract
Abstract This invention relates to a method of manufacturing a semiconductor device having elements isolated by a trench. A trench (34) is formed to surround an element region (45) of a silicon substrate (32) by anisotropic etching. A nonoxide film (40) such as a silicon nitride (SiN x ) film is selectively formed on the upper surface of the element region (35). Thermal oxidation is performed using the nonoxide film (40) as a mask to form an oxide film (43) on the inner face of the trench (34) and the upper surface of a field region (42). Thereafter, a polysilicon layer (44) is buried in the trench (34), and after the surface of the polysilicon layer (44) is flattened, a capping oxide film (45) is formed on the upper surface of the trench (34). In addition, a nonoxide film (40) is formed to have an interval between the end of the nonoxide film (40) and the trench (34) of 2 µm or more.
Inventors
- 👤 Naoto C/O Intellectual Property Div. Miyashita
- 👤 Koichi C/O Intellectual Property Div. Takahashi
- 👤 Hironori C/O Intellectual Property Div. Sonobe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 01:59
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
114 words
A method of manufacturing a semiconductor device, characterized by comprising the steps of: forming a trench (34) in a monocrystalline silicon substrate (32) to surround an element forming region by anisotropic etching; forming a nonoxide film (40) on said element forming region such that an interval between an end portion of said nonoxide film and a side wall of each trench at a side near said element forming region of said trench is not less than 2 µm; and forming an oxide film (43) having a thickness of less than 9,000 Å on a surface of said substrate including an inside of said trench using said nonoxide film as a mask during selective oxidation.
Claim 2
Independent Claim
114 words
A method of manufacturing a semiconductor device, characterized by comprising the steps of: forming a trench (34) in a monocrystalline silicon substrate (32) to surround an element forming region by anisotropic etching; forming a nonoxide film (40) on said element forming region such that an interval between an end portion of said nonoxide film and a side wall of each trench at a side near said element forming region of said trench is not less than 2 µm; and forming an oxide film (43) having a thickness of less than 9,000 Å on a surface of said substrate including an inside of said trench using said nonoxide film as a mask during selective oxidation.
Claim 3
Dependent Claim
22 words
A method according to claim 1, characterized in that said trench is formed to have a width of 1 to 2 µm.
Claim 4
Dependent Claim
21 words
A method according to claim 1, characterized in that at least a bipolar transistor is formed in said element forming region.
Claim 5
Independent Claim
113 words
A method of manufacturing a semiconductor device, characterized by comprising the steps of: forming a trench in a monocrystalline silicon substrate (32) to surround an element forming region by anisotropic etching; forming a nonoxide film (40) on said element forming region such that an interval between an end portion of said nonoxide film and a side wall of each trench at a side near said element forming region of said trench is not less than 1.6 µm; and forming an oxide film (43) having a thickness of less than 7,200 Å on a surface of said substrate including an inside of said trench using said nonoxide film as a mask during selective oxidation.
Claim 6
Independent Claim
113 words
A method of manufacturing a semiconductor device, characterized by comprising the steps of: forming a trench in a monocrystalline silicon substrate (32) to surround an element forming region by anisotropic etching; forming a nonoxide film (40) on said element forming region such that an interval between an end portion of said nonoxide film and a side wall of each trench at a side near said element forming region of said trench is not less than 1.6 µm; and forming an oxide film (43) having a thickness of less than 7,200 Å on a surface of said substrate including an inside of said trench using said nonoxide film as a mask during selective oxidation.
Claim 7
Dependent Claim
22 words
A method according to claim 4, characterized in that said trench is formed to have a width of 0.8 to 1.6 µm.
Claim 8
Dependent Claim
21 words
A method according to claim 4, characterized in that at least a bipolar transistor is formed in said element forming region.
Claim 9
Independent Claim
113 words
A method of manufacturing a semiconductor device, characterized by comprising the steps of: forming a trench in a monocrystalline silicon substrate (32) to surround an element forming region by anisotropic etching; forming a nonoxide film (40) on said element forming region such that an interval between an end portion of said nonoxide film and a side wall of each trench at a side near said element forming region of said trench is not less than 1.4 µm; and forming an oxide film (43) having a thickness of less than 6,300 Å on a surface of said substrate including an inside of said trench using said nonoxide film as a mask during selective oxidation.
Claim 10
Independent Claim
113 words
A method of manufacturing a semiconductor device, characterized by comprising the steps of: forming a trench in a monocrystalline silicon substrate (32) to surround an element forming region by anisotropic etching; forming a nonoxide film (40) on said element forming region such that an interval between an end portion of said nonoxide film and a side wall of each trench at a side near said element forming region of said trench is not less than 1.4 µm; and forming an oxide film (43) having a thickness of less than 6,300 Å on a surface of said substrate including an inside of said trench using said nonoxide film as a mask during selective oxidation.
Claim 11
Dependent Claim
22 words
A method according to claim 7, characterized in that said trench is formed to have a width of 0.7 to 1.4 µm.
Claim 12
Dependent Claim
21 words
A method according to claim 7, characterized in that at least a bipolar transistor is formed in said element forming region.
References Cited (Backward Citations)
No citation records indexed.
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