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EP0402784A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of manufacturing a CMOS semiconductor device

Assignee: Toshiba Corp
•
Filing: 1990-06-08
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Granted: —
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Expires: 2010-06-08
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Abstract

Abstract An improved method of manufacturing a semiconductor device, especially suitable for a p-channel MOS transistor is disclosed. The method has the steps of: forming a gate oxide film (104) over the surface of a semiconductor substrate (101) in a region where a p-channel MOS transistor is to be formed, forming a polysilicon film (102) over the gate oxide film (104), in order to construct a gate electrode, forming a film (103) of an amorphous material over the polysilicon (102) film and implanting ions of a p-type impurity, especially element boron atom, into the polysilicon film (102) through the film of amorphous material.

Inventors

  • 👤 Yasuyuki Saito

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 16:00
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/017; H10D84/02; H10D84/03; H10D84/038; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/034

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 84 words
A method of manufacturing a semiconductor device, characterized in that the method comprising the steps of: forming a gate oxide film over the surface of a semiconductor substrate in a region where a p-channel MOS transistor is to be formed; forming a polysilicon film over said gate oxide film, in order to construct a gate electrode; forming a film of an amorphous material over said polysilicon film; and implanting ions of a p-type impurity into said polysilicon film, through said film of amorphous material.
Claim 2
Independent Claim 84 words
A method of manufacturing a semiconductor device, characterized in that the method comprising the steps of: forming a gate oxide film over the surface of a semiconductor substrate in a region where a p-channel MOS transistor is to be formed; forming a polysilicon film over said gate oxide film, in order to construct a gate electrode; forming a film of an amorphous material over said polysilicon film; and implanting ions of a p-type impurity into said polysilicon film, through said film of amorphous material.
Claim 3
Dependent Claim 36 words
A method of manufacturing a semiconductor device according to claim 1, comprising a further step of removing said film of amorphous material, after said ions of said p-type impurity have been implanted into said polysilicon film.
Claim 4
Dependent Claim 39 words
A method of manufacturing a semiconductor device according to claim 2, comprising a further step of forming a layer of a silicide of a refractory metal over said polysilicon film, after said film of amorphous material has been removed.
Claim 5
Dependent Claim 25 words
A method of manufacturing a semiconductor device according to claim 1, wherein said p-channel MOS transistor is one of a pair of complementary MOS transistors.

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