EP0402230A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process and device for marking and cleaving mono-crystalline semiconductor wafers
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
•
Filing: 1990-06-05
•
Granted: —
•
Expires: 2010-06-05
Abstract
Abstract According to the invention, in order to mark a reference direction on a wafer of a low hardness monocrystalline semiconductor material, an imprint (1) is formed on the useful surface of the wafer in a non-useful area of this surface, the imprint revealing at least one direction from which the reference direction (9, 11, 13) is derived, and the latter is marked by a line in the non-useful area. With the reference direction corresponding to a cleavage plane of the wafer, the latter is furthermore cleaved by marking a cleavage line along the reference direction on the other surface of the wafer. <IMAGE>
Inventors
- 👤 Gérard Petroz
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 19:26
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/06; H10P72/0614; B; B28; B28D; B28D5/00; B28D5/0005; B28D5/0011; H10P52/00; H10W; H10W46/00; H10W46/501; Y; Y10; Y10T; Y10T225/00; Y10T225/30; Y10T225/307; Y10T225/321; Y10T83/00; Y10T83/02; Y10T83/0333; Y10T83/0341; Y10T83/0356; Y10T83/828; Y10T83/839
Claims Analysis
Total Claims: 0
No claims parsed yet. Click Sync Now above to re-index claims from Google Patents.
References Cited (Backward Citations)
FR1566090A
Cited
FR2046933A1
Cited
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.