EP0399754A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device protection circuit
Assignee: Motorola Solutions Inc
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Filing: 1990-05-21
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Granted: —
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Expires: 2010-05-21
Abstract
Abstract Semiconductor device protection circuit (10) provides increased power dissipation (current) limits for FET (11) when lower FET temperatures exist. The FET drain to source voltage (VDS) is monitored to provide a current sense signal (54). When the current sense signal exceeds a predetermined reference limit signal (VREF, 55), a control circuit (20, 32) reduces current (power dissipation) in the FET. Circuitry (24) provides the reference limit signal (VREF) with a predetermined temperature variation as a function of the sensed temperature of the FET whereby for low device temperatures higher power dissipation (current) limits for the FET are provided. An additional control circuit (21, 30) provides short circuit overcurrent protection by reducing current in the FET when sensed FET current exceeds a predetermined limit. A delay circuit (39) inhibits operation of at least the control circuit (20, 32) until a predetermined time (t1) after the FET is turned on.
Inventors
- 👤 Arthur James Edwards
- 👤 Kirk Sievers
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 20:17
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/08; H03K17/082; H03K17/0822; H02; H02H; H02H5/00; H02H5/04; H02H5/044; H03K2017/0806; Y; Y10; Y10S; Y10S323/00; Y10S323/901
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
216 words
A semiconductor device protection circuit (10) comprising: semiconductor device (11) for receiving at least one control signal (at 37) and, in response thereto, selectively passing current therethrough; sense means (15-18; 60-62) coupled to said device for developing a power dissipation sense signal (54 at 19) having a magnitude indicative of the power dissipated by said device when said device is on; first control means (20, 32, 33) for receiving said power dissipation sense signal (54) and a first predetermined reference limit signal (V REF , 55) and modifying said control signal (at 37) to reduce power dissipation in said device in response to the magnitude of said sense signal (54) exceeding the magnitude of said reference limit signal (V REF , 55) by a predetermined amount; and characterized by means (24) for developing said predetermined reference limit signal (V REF , 55) such that said reference limit signal varies in accordance with a sensed temperature signal (at 27) and has a magnitude varying in accordance with the temperature of said device (11), wherein the reference limit signal (V REF , 55) is varied so as to allow a higher maximum power dissipation by said device (11) at lower temperatures than at higher temperatures before the control means (20, 32, 33) modifies operation of said device (11).
Claim 2
Dependent Claim
216 words
A semiconductor device protection circuit (10) comprising: semiconductor device (11) for receiving at least one control signal (at 37) and, in response thereto, selectively passing current therethrough; sense means (15-18; 60-62) coupled to said device for developing a power dissipation sense signal (54 at 19) having a magnitude indicative of the power dissipated by said device when said device is on; first control means (20, 32, 33) for receiving said power dissipation sense signal (54) and a first predetermined reference limit signal (V REF , 55) and modifying said control signal (at 37) to reduce power dissipation in said device in response to the magnitude of said sense signal (54) exceeding the magnitude of said reference limit signal (V REF , 55) by a predetermined amount; and characterized by means (24) for developing said predetermined reference limit signal (V REF , 55) such that said reference limit signal varies in accordance with a sensed temperature signal (at 27) and has a magnitude varying in accordance with the temperature of said device (11), wherein the reference limit signal (V REF , 55) is varied so as to allow a higher maximum power dissipation by said device (11) at lower temperatures than at higher temperatures before the control means (20, 32, 33) modifies operation of said device (11).
Claim 3
Dependent Claim
94 words
A semiconductor device protection circuit according to claim 1 which includes additional control means (21, 30) coupled to said device (11) for reducing current through said device in response to the magnitude of a current sense signal, indicative of the current in said semiconductor device when said device is on, exceeding the magnitude of a second predetermined reference limit signal (at 23), whereby said additional control means (21,30) implements a short circuit protection function for said device while said first control means (20, 32, 33) implements a power dissipation limit function for said device.
Claim 4
Dependent Claim
81 words
A semiconductor device protection circuit according to claim 1 wherein said power dissipation sense signal (54 at 19) is a current sense signal having a magnitude indicative of the current passed through said device (11) when said device is on, and wherein the reference limit signal (V REF ) is varied so as to allow a higher maximum current through said device at lower device temperatures than at higher device temperatures before the first control means modifies operation of said device.
Claim 5
Dependent Claim
30 words
A semiconductor device protection circuit according to claim 3 wherein said magnitude of said current sense signal (at 19) is a function of the temperature of said semiconductor device (11).
Claim 6
Dependent Claim
33 words
A semiconductor device protection circuit according to claim 3 wherein said reference limit signal (V REF ) varies by at least .10 percent per degree centigrade of the temperature of said device (11).
Claim 7
Dependent Claim
53 words
A semiconductor device protection circuit according to claim 5 wherein said reference signal developing means (24) includes at least one temperature sensing semiconductor device (26) mounted adjacent (in 43) to said semiconductor device (11) receiving said control signal (at 37), said temperature sensing semiconductor device (26) providing said sensed temperature signal (at 27).
Claim 8
Dependent Claim
66 words
A semiconductor device protection circuit according to claim 6 wherein said temperature sensing semiconductor device (26) comprises at least one diode (26) mounted on a semiconductor die (43) which is separate from a semiconductor die (41) which comprises the semiconductor device (11) controlled by said first control means (20, 32, 33), both of said dies (41 and 43) being mounted to a common heat sink (42).
Claim 9
Dependent Claim
18 words
A semiconductor device protection circuit according to claim 3 wherein said semiconductor device (11) is a FET transistor.
Claim 10
Dependent Claim
31 words
A semiconductor device protection circuit according to claim 8 wherein said current sense signal is the voltage across drain and source electrodes of said FET multiplied by a predetermined gain factor.
Claim 11
Dependent Claim
41 words
A semiconductor device protection circuit according to claim 9 which includes delay means (39) for delaying operation of said first control means (20, 32, 33) for a first predetermined delay time (t₁) after each turning on of said semiconductor device (11).
Claim 12
Dependent Claim
214 words
A semiconductor device protection circuit (10) comprising: semiconductor device (11) for receiving at least one control signal (at 37) and, in response thereto, selectively passing current therethrough; sense means (15-18; 60-62) coupled to said device for developing a current sense signal (54 at 19) having a magnitude indicative of the current passed through said device when said device is on; first control means (20, 32, 33; or 21, 30) for receiving said current sense signal (at 19) and a first predetermined reference limit signal (V REF or signal at 23) and modifying said control signal (37) to reduce current through said device (11) in response to the magnitude of said sense signal exceeding the magnitude of said reference limit signal by a predetermined amount; and characterized by means (24) for developing said predetermined reference limit signal (V REF or signal at 23) such that said reference limit signal varies in accordance with a sensed temperature signal (at 27) and has a magnitude varying in accordance with the temperature of said device (11), wherein the reference limit signal is varied so as to allow a higher maximum current through said device at lower device temperatures than at higher device temperatures before the control means (20, 32, 33 or 21, 30) modifies operation of said device.
Claim 13
Dependent Claim
214 words
A semiconductor device protection circuit (10) comprising: semiconductor device (11) for receiving at least one control signal (at 37) and, in response thereto, selectively passing current therethrough; sense means (15-18; 60-62) coupled to said device for developing a current sense signal (54 at 19) having a magnitude indicative of the current passed through said device when said device is on; first control means (20, 32, 33; or 21, 30) for receiving said current sense signal (at 19) and a first predetermined reference limit signal (V REF or signal at 23) and modifying said control signal (37) to reduce current through said device (11) in response to the magnitude of said sense signal exceeding the magnitude of said reference limit signal by a predetermined amount; and characterized by means (24) for developing said predetermined reference limit signal (V REF or signal at 23) such that said reference limit signal varies in accordance with a sensed temperature signal (at 27) and has a magnitude varying in accordance with the temperature of said device (11), wherein the reference limit signal is varied so as to allow a higher maximum current through said device at lower device temperatures than at higher device temperatures before the control means (20, 32, 33 or 21, 30) modifies operation of said device.
Claim 14
Dependent Claim
102 words
A semiconductor device protection circuit according to claim 11 which includes additional control means (21, 30) coupled to said device (11) for reducing current through said device in response to the magnitude of said current sense signal (at 19) exceeding the magnitude of a second predetermined reference limit signal (at 23), said second reference signal magnitude (at 23) being greater than said first reference signal magnitude (V REF ), whereby said additional control means (21, 30) implements a short circuit protection function for said device while said first control means (20, 32, 33) implements a power dissipation limit function for said device.
Claim 15
Dependent Claim
122 words
A semiconductor device protection circuit according to claim 11 which includes means (21, 30, 36) for turning said semiconductor device (11) off at a first predetermined time after and in response to the occurrence of said current sense signal (at 19) exceeding a limit reference signal (at 23) and which includes means (33, 35 and 36) for turning said semiconductor device off at a second predetermined time after and in response to the occurrence of a transition (high to low) in a signal (at 38) which determines said control signal (at 37), said second time exceeding said first time, whereby turning said semiconductor device off for a sensed overcurrent condition occurs faster than the normal time for turning said semiconductor device off.
References Cited (Backward Citations)
No citation records indexed.
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