EP0397315A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method and apparatus for heating and cooling semiconductor wafers in semiconductor wafer processing equipment
Assignee: Applied Materials Inc
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Filing: 1990-03-30
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Granted: —
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Expires: 2010-03-30
Abstract
Abstract The disclosure relates to a method for heating or cooling a semiconductor wafer (50) in semiconductor processing apparatus (2) is described which comprises directing into contact with a surface of the wafer at least a portion of one or more components of the process gas to transfer heat between the wafer and a wafer support positioned in the apparatus adjacent to the wafer. Method and apparatus are also described for controlling (18) the total flow of process gas through the apparatus and for monitoring (60) the pressure in said apparatus to maintain the desired pressure therein.
Inventors
- 👤 Chiu-Wing Tsui
- 👤 Richard H. Crockett
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 17:28
CPC Classifications
H; H10; H10W; H10W40/00; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
106 words
A method for cooling a semiconductor wafer in a plasma etching apparatus which comprises utilizing one or more thermally conductive components of the process gas used in the plasma etching process as a gas conduction heat transfer gas by directing at least a portion of said one or more thermally conductive components of said process gas into contact with a surface of said wafer to transfer heat from said wafer to a heat sink positioned in said apparatus adjacent said wafer without substantially restricting the movement of said one or more thermally conductive components of the process gas into the plasma etching chamber in said apparatus.
Claim 2
Independent Claim
106 words
A method for cooling a semiconductor wafer in a plasma etching apparatus which comprises utilizing one or more thermally conductive components of the process gas used in the plasma etching process as a gas conduction heat transfer gas by directing at least a portion of said one or more thermally conductive components of said process gas into contact with a surface of said wafer to transfer heat from said wafer to a heat sink positioned in said apparatus adjacent said wafer without substantially restricting the movement of said one or more thermally conductive components of the process gas into the plasma etching chamber in said apparatus.
Claim 3
Dependent Claim
82 words
The process of claim 1 wherein said step of directing at least a portion of said one or more components of said process gas into contact with a surface of said wafer further comprise directing said one or more components of said process gas toward the rear surface of said wafer through one or more openings in said heat sink comprising support means adjacent said rear surface of said wafer to provide heat transfer between said wafer surface and said support means.
Claim 4
Dependent Claim
54 words
The process of claim 2 wherein said step of directing said one or more components of said process gas toward said rear surface of said wafer further comprises directing a controlled flow of from about 1-5 sccm of said one or more components of said processing gas toward said rear surface of said wafer.
Claim 5
Dependent Claim
33 words
The process of claim 3 including the step of controlling the total flow of process gas into said plasma etching apparatus to within a range of from about 130 to about 300 sccm.
Claim 6
Dependent Claim
52 words
The method of claim 3 wherein said said step of directing said flow of said one or more components of said process gas toward said rear surface of said wafer further comprises directing from about 1 to about 5% of the total process gas flow toward said rear surface of said wafer.
Claim 7
Dependent Claim
52 words
The process of claim 3 wherein said one or more components of said process gas which are directed into contact with said rear surface of said wafer to provide heat transfer from said wafer to said adjacent support means are selected from the class consisting of fluorinated 1-4 carbon hydrocarbons and argon.
Claim 8
Dependent Claim
74 words
The process of claim 1 which further includes the step of supporting said wafer on a support surface in said chamber which support surface also functions as a heat sink and said step of directing at least a portion of said one or more components of said process gas toward a surface of said wafer comprises directing said flow of process gas toward a rear surface of said wafer resting on said support surface.
Claim 9
Independent Claim
153 words
A method for cooling a semiconductor wafer in a plasma etching apparatus having a total process gas flow into said apparatus of from about 130 to about 300 sccm which comprises utilizing one or more components of said process gas used in the plasma etching process as a gas conduction heat transfer gas which comprises: (a) positioning a semiconductor wafer in said plasma etching apparatus adjacent a wafer support capable accepting heat generated in said wafer; (b) directing into contact with a surface of said wafer from about 1-5 sccm of at least a portion of said one or more components of said process gas selected from the class consisting of fluorinated 1-4 carbon hydrocarbons and argon to transfer heat from said wafer to said support; and (c) monitoring the vacuum in said plasma etching apparatus to maintain said plasma etching apparatus at a pressure of from about 40 to about 200 millitorr.
Claim 10
Independent Claim
153 words
A method for cooling a semiconductor wafer in a plasma etching apparatus having a total process gas flow into said apparatus of from about 130 to about 300 sccm which comprises utilizing one or more components of said process gas used in the plasma etching process as a gas conduction heat transfer gas which comprises: (a) positioning a semiconductor wafer in said plasma etching apparatus adjacent a wafer support capable accepting heat generated in said wafer; (b) directing into contact with a surface of said wafer from about 1-5 sccm of at least a portion of said one or more components of said process gas selected from the class consisting of fluorinated 1-4 carbon hydrocarbons and argon to transfer heat from said wafer to said support; and (c) monitoring the vacuum in said plasma etching apparatus to maintain said plasma etching apparatus at a pressure of from about 40 to about 200 millitorr.
Claim 11
Dependent Claim
61 words
Apparatus for cooling a semiconductor wafer in a plasma etching apparatus by utilizing one or more components of the process gas used in the plasma etching process as a gas conduction heat transfer gas which comprises means for directing at least a portion of said one or more components of said process gas into contact with a surface of said wafer.
Claim 12
Dependent Claim
61 words
Apparatus for cooling a semiconductor wafer in a plasma etching apparatus by utilizing one or more components of the process gas used in the plasma etching process as a gas conduction heat transfer gas which comprises means for directing at least a portion of said one or more components of said process gas into contact with a surface of said wafer.
Claim 13
Dependent Claim
76 words
The apparatus of claim 9 which further includes means for supporting said wafer on a support surface in said plasma etching apparatus which support surface also functions as a heat sink, and said means for directing at least a portion of said one or more components of said process gas toward a surface of said wafer further comprises means for directing said process gas toward a rear surface of said wafer resting on said support surface.
References Cited (Backward Citations)
No citation records indexed.
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