EP0396276A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device
Assignee: NEC Corp
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Filing: 1990-04-18
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Granted: —
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Expires: 2010-04-18
Abstract
Abstract According to a method of manufacturing a semiconductor device with a semiconductor element, a wiring layer is formed on a semiconductor substrate on which a semiconductor element is formed. A first window is formed to expose a first surface portion of the wiring layer in a protective film which covers the entire surface of the semiconductor substrate. A metal film is formed on the entire surface including the first protective film and within the first window. A second window having an opening smaller than that of the first window is formed in the metal film to expose a second surface portion of the wiring layer within the first surface portion. Electrolytic plating is performed using the metal film as a current path to form a projecting metal electrode on the second surface portion of the wiring layer in the second window. Thereafter, the metal film is removed.
Inventors
- 👤 Takaaki Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 07:23
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/20; H10W72/231; H10W72/234; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
179 words
A method of manufacturing a semiconductor device with a semiconductor element comprising the steps of: forming a wiring layer on a semiconductor substrate; forming a protective film on the wiring layer; forming a first window in said protective film to expose a first surface portion of said wiring layer; forming a metal film continuously on said protective film and on said first surface portion of said wiring layer within said first window; forming a mask layer on said metal film; forming a second window in said metal film using said mask layer as a mask to expose a second surface portion of said wiring layer positioned within said first surface portion such that said metal film is left contacting to said first surface portion outside and periphery of said second surface portion of said wiring layer; performing electrolytic plating using said mask layer as a mask and using said metal film as a current path to form a projecting metal electrode on said second surface portion of said wiring layer; and removing said mask layer and said metal film.
Claim 2
Independent Claim
179 words
A method of manufacturing a semiconductor device with a semiconductor element comprising the steps of: forming a wiring layer on a semiconductor substrate; forming a protective film on the wiring layer; forming a first window in said protective film to expose a first surface portion of said wiring layer; forming a metal film continuously on said protective film and on said first surface portion of said wiring layer within said first window; forming a mask layer on said metal film; forming a second window in said metal film using said mask layer as a mask to expose a second surface portion of said wiring layer positioned within said first surface portion such that said metal film is left contacting to said first surface portion outside and periphery of said second surface portion of said wiring layer; performing electrolytic plating using said mask layer as a mask and using said metal film as a current path to form a projecting metal electrode on said second surface portion of said wiring layer; and removing said mask layer and said metal film.
Claim 3
Dependent Claim
17 words
A method according to claim 1, wherein said protective film is made of a polyimide resin film.
Claim 4
Dependent Claim
16 words
A method according to claim 1, wherein said mask layer is made of a photoresist film.
Claim 5
Dependent Claim
32 words
A method according to claim 1, wherein said wiring layer includes an aluminum layer and a two-layered structure selectively formed on said aluminum layer and constituting said first and second surface portions.
Claim 6
Dependent Claim
40 words
A method according to claim 4, wherein said two-layered structure is composed of a titanium film attached to said aluminum layer and a platinum film attached to said titanium film, and said metal film is made of a titanium film.
Claim 7
Dependent Claim
22 words
A method according to claim 1, wherein said electrolytic plating is a gold plating to form said projecting metal electrode of gold.
Claim 8
Dependent Claim
88 words
A method according to claim 1, wherein said forming said wiring layer includes the steps of: forming a first metal film entirely on a major surface of said substrate via an insulating layer; forming selectively a second metal film having a wiring pattern on said first metal film; foring a third metal film on said second metal film by electrolytic plating using said first metal film as a current path; and patterning said first metal film by etching using said second and third metals films as a mask.
Claim 9
Dependent Claim
41 words
A method according to claim 7, wherein said second metal film is composed of a titanium film attached to said first metal film and a platinum film attached to said titanium film, and said third metal film is made of gold.
Claim 10
Dependent Claim
51 words
A method according to claim 1, further comprising a step of connecting a lead to the top surface of said projecting metal at its tip portion and extending substantially, horizontally at its other portion so that said other portion of said lead faces directly the upper surface of said protective film.
References Cited (Backward Citations)
No citation records indexed.
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