Photosensitive composition and pattern formation method using the same

Claim 2

A photosensitive composition containing an alkali-soluble polymer having phenol skeletons and a compound represented by the following formula (I), (II) or (III): wherein R, and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R 4 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyndyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R s and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R s and R 6 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 , Rg, R 10 , R 11 and R 12 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R 14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group. a furyl group, a pyridyl group or a 2-styryl group, or R 13 3 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8).

Claim 3

A composition according to claim 1, characterized in that said alkali-soluble polymer having phenol skeletons is a polymer containing silicon.

Claim 4

A composition according to claim 1 or 2, characterized in that a mixing ratio of a compound represented by said formula (I), (II) or (III) is 1 to 500 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer.

Claim 5

A composition according to claim 1, characterized in that each of R 3 , R s and R, 3 of said formulas (I), (II) and (III), respectively, is a silicon-containing alkyl group or a silicon-containing aryl group, and each of R 4 , Rs and R 14 of said formulas (I), (II) and (III), respectively, is a hydrogen atom.

Claim 6

A composition according to claim 4, characterized in that a mixing ratio of a compound represented by said formula (I), (II) or (III) is 1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer.

Claim 7

A photosensitive composition containing an alkali-soluble polymer having phenol skeletons, a compound represented by the following formula (IV) and a basic compound: wherein R, and R 16 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 15 and R 16 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 17 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, and R, 18 represents a hydrogen atom.

Claim 8

A photosensitive composition containing an alkali-soluble polymer having phenol skeletons, a compound represented by the following formula (IV) and a basic compound: wherein R, and R 16 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 15 and R 16 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 17 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, and R, 18 represents a hydrogen atom.

Claim 9

A composition according to claim 6, characterized in that a mixing ratio of a compound represented by said formula (IV) is 1 to 500 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer, and a mixing ratio of said basic compound is 0.1 to 500 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer.

Claim 10

A composition according to claim 6, characterized in that a compound represented by said formula (IV) is a compound represented by the following formula (V): wherein R 19 and R 20 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 19 and R 20 together form a cyclic structure represented by (̵CH 2 )̵ n wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 ))̵ n (wherein, n represents a positive integer of not less than 3), R 21 represents a silicon-containing alkyl group or a silicon-containing aryl group, and R 22 represents a hydrogen atom.

Claim 11

A composition according to claim 8, characterized in that a mixing ratio of a compound represented by said formula (V) is 1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer, and a mixing ratio of said basic compound is 0.1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer.

Claim 12

A composition according to claim 6. characterized in that said alkali-soluble polymer having phenol skeletons is a polymer containing silicon.

Claim 13

A composition according to claim 10, characterized in that a mixing ratio of a compound represented by said formula (IV) is 1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer, and a mixing ratio of said basic compound is 0.1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer.

Claim 14

A photosensitive composition containing an alkali-soluble polymer having phenol skeletons, a compound represented by the following formula (VI) and a compound which produces an acid upon radiation of light: wherein R 23 and R 24 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 23 and R 24 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), and R 2 s and R 2s may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 25 and R 26 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 4).

Claim 15

A photosensitive composition containing an alkali-soluble polymer having phenol skeletons, a compound represented by the following formula (VI) and a compound which produces an acid upon radiation of light: wherein R 23 and R 24 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 23 and R 24 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), and R 2 s and R 2s may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms. a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 25 and R 26 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 4).

Claim 16

A composition according to claim 12, characterized in that a mixing ratio of a compound represented by said formula (VI) is 1 to 500 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer, and a mixing ratio of said compound which produces an acid upon radiation of light is about 0.01 to about 10 parts by weight with respect to the total weight of a contained solid component.

Claim 17

A composition according to claim 12, characterized in that a compound represented by said formula (VI) is a compound represented by the following formula (VII): wherein R 27 and R28 23 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 27 and R 28 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 29 represents a silicon-containing alkyl group or a silicon-containing aryl group, and R 30 represents a hydrogen atom.

Claim 18

A composition according to claim 14, characterized in that a mixing ratio of a compound represented by said formula (VII) is 1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer, and a mixing ratio of said compound which produces an acid upon radiation of light is about 0.01 to about 10 parts by weight with respect to the total weight of a contained solid component.

Claim 19

A composition according to claim 12, characterized in that said alkali soluble-polymer having phenol skeletons is a polymer containing silicon.

Claim 20

A composition according to claim 16. characterized in that a mixing ratio of a compound represented by said formula (VI) is 1 to 200 parts by weight with respect to 100 parts by weight of said alkali-soluble polymer. and a mixing ratio of said compound which produces an acid upon radiation of light is about 0.01 to about 10 parts by weight with respect to the total weight of a contained solid component.

Claim 21

A pattern formation method comprising the steps of: dissolving a photosensitive composition according to any one of claims 1, 2, 4, 6, 8, 10, 12. 14 and 16 in an organic solvent to prepare a photosensitive resin solution; coating said photosensitive resin solution on a substrate to form a photosensitive resin layer on said substrate; pattern-exposing said photosensitive resin layer; and developing the exposed resin layer with an aqueous alkaline solution.

Claim 22

A method according to claim 18, characterized in that said pattern exposure is performed by using deep UV light.

Claim 23

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition according to any one of claims 2, 4, 8, 10, 14 and 16 in an organic solvent to prepare a photosensitive resin solution; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; developing the pattern-exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching by using said photosensitive resin pattern as a mask.

Claim 24

A method according to claim 20, characterized in that said pattern exposure is performed by using deep UV light.

Claim 25

A pattern formation method comprising the steps of: dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and a compound represented by the following formula (I), (II) or (III): wherein R, and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R4 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (CH2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R s and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R s and R s together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 . Rg, R 10 , R 11 , and R 12 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R 14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 13 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8); coating said photosensitive resin solution on a substrate to form a photosensitive resin layer on said substrate; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; and developing the entirely exposed resin layer with an aqueous alkaline solution.

Claim 26

A pattern formation method comprising the steps of: dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and a compound represented by the following formula (I), (II) or (III): wherein R, and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R4 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (CH2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R s and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R s and R s together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 . Rg, R 10 , R 11 , and R 12 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R 14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 13 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8); coating said photosensitive resin solution on a substrate to form a photosensitive resin layer on said substrate; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; and developing the entirely exposed resin layer with an aqueous alkaline solution.

Claim 27

A method according to claim 22, characterized in that each of R 3 , Rs and R, 3 of said formulas (I), (II) and (III), respectively, is a silicon-containing alkyl group or a silicon-containing aryl group, and each of R 4 , Rs and R, 4 of said formulas (I), (II) and (III), respectively, is a hydrogen atom.

Claim 28

A method according to claim 22, characterized in that said alkali-soluble polymer having phenol skeletons is a polymer containing silicon.

Claim 32

A pattern formation method comprising the steps of: dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons, a compound represented by the following formula (IV) and a basic compound: wherein R 15 and R 16 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 15 and R16 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 17 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, and R, 8 represents a hydrogen atom; coating said photosensitive resin solution on a substrate to form a photosensitive resin layer on said substrate; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; and developing the entirely exposed resin layer with an aqueous alkaline solution.

Claim 33

A pattern formation method comprising the steps of: dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons, a compound represented by the following formula (IV) and a basic compound: wherein R 15 and R 16 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 15 and R16 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 17 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, and R, 8 represents a hydrogen atom; coating said photosensitive resin solution on a substrate to form a photosensitive resin layer on said substrate; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; and developing the entirely exposed resin layer with an aqueous alkaline solution.

Claim 34

A method according to claim 28, characterized in that a compound represented by said formula (IV) is a compound represented by the following formula (V): wherein R 19 and R 20 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 19 and R 20 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 21 represents a silicon-containing alkyl group or a silicon-containing aryl group, and R 22 represents a hydrogen atom.

Claim 35

A method according to claim 28, characterized in that said alkali-soluble polymer having phenol skeletons is a polymer containing silicon.

Claim 39

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and a compound represented by the following formula (I), (II) or (III): wherein R 1 and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R d may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R s and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or Rs and R 6 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 , R 9 , R 10 , R 11 and R 12 may be the same or different and independently represent a hydrogen atom. a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R 14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 13 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8), each of R 3 , R 5 and R 13 of said formulas (I), (II) and (III), respectively, being a silicon-containing alkyl group or a silicon-containing aryl group, and each of R 4 , Rs and R 14 of said formulas (I). (II) and (III), respectively, being a hydrogen atom; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching by using said photosensitive resin pattern as a mask.

Claim 40

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and a compound represented by the following formula (I), (II) or (III): wherein R 1 and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R d may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R s and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or Rs and R 6 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 , R 9 , R 10 , R 11 and R 12 may be the same or different and independently represent a hydrogen atom. a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R 14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 13 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8), each of R 3 , R 5 and R 13 of said formulas (I), (II) and (III), respectively, being a silicon-containing alkyl group or a silicon-containing aryl group, and each of R 4 , Rs and R 14 of said formulas (I). (II) and (III), respectively, being a hydrogen atom; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching by using said photosensitive resin pattern as a mask.

Claim 41

A method according to claim 34, characterized in that said pattern exposure is performed by using deep UV light.

Claim 42

A method according to claim 34, characterized in that heating of the pattern-exposed resin layer is performed at a temperature of 60 °C to 150 °C.

Claim 43

A method according to claim 34, characterized in that entire-surface exposure of said resin layer is performed by using light having a wavelength of not more than 450 nm.

Claim 44

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive comoosition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and containing silicon and a compound represented by the following formula (I), (II) or (III): wherein R, and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R 4 - may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (̵CH 2 )̵n (wherein n represents a positive integer of 4 to 8): wherein R 5 and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 5 and R 6 together form a cyclic structure represented by (̵CH 2 )̵ n ((wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 , Rs, Rio, R 11 and R 12 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 13 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8); coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching using said photosensitive resin pattern as a mask.

Claim 45

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive comoosition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and containing silicon and a compound represented by the following formula (I), (II) or (III): wherein R, and R 2 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 3 and R 4 - may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 3 and R 4 together form a cyclic structure represented by (̵CH 2 )̵n (wherein n represents a positive integer of 4 to 8): wherein R 5 and R 6 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 5 and R 6 together form a cyclic structure represented by (̵CH 2 )̵ n ((wherein n represents a positive integer of 4 to 8): wherein R 7 , R 8 , Rs, Rio, R 11 and R 12 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and R 13 and R14 may be the same or different and independently represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, or R 13 and R 14 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of 4 to 8); coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching using said photosensitive resin pattern as a mask.

Claim 46

A method according to claim 38, characterized in that said pattern exposure is performed by using deep UV light.

Claim 47

A method according to claim 38, characterized in that heating of the pattern-exposed resin layer is performed at a temperature of 60' C to 150' C.

Claim 48

A method according to claim 38, characterized in that entire-surface exposure of said resin layer is performed by using light having a wavelength of not more than 450 nm.

Claim 49

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution. said photosensitive composition containing an alkali-soluble polymer having phenol skeletons. a compound represented by the following formula (v) and a basic compound: wherein R 19 and R 20 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 19 and R 20 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 21 represents a silicon-containing alkyl group or a silicon-containing aryl group, and R 22 represents a hydrogen atom; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching using said photosensitive resin pattern as a mask.

Claim 50

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution. said photosensitive composition containing an alkali-soluble polymer having phenol skeletons. a compound represented by the following formula (v) and a basic compound: wherein R 19 and R 20 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 19 and R 20 together form a cyclic structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 21 represents a silicon-containing alkyl group or a silicon-containing aryl group, and R 22 represents a hydrogen atom; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching using said photosensitive resin pattern as a mask.

Claim 51

A method according to claim 42, characterized in that said pattern exposure is performed by using deep UV light.

Claim 52

A method according to claim 42, characterized in that heating of the pattern-exposed resin layer is performed at a temperature of 60' C to 150' C.

Claim 53

A method according to claim 42, characterized in that entire-surface exposure of said resin layer is performed by using light having a wavelength of not more than 450 nm.

Claim 54

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and containing silicon, a compound represented by the following formula (IV) and a basic compound: wherein R 15 and R 16 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 15 and R, together form a cyclic structure represented by (̵CH 2 )̵ n wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 17 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, and R 18 represents a hydrogen atom; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching by using said photosensitive resin pattern as a mask.

Claim 55

A pattern formation method comprising the steps of: forming a polymer material layer on a substrate; dissolving a photosensitive composition in an organic solvent to prepare a photosensitive resin solution, said photosensitive composition containing an alkali-soluble polymer having phenol skeletons and containing silicon, a compound represented by the following formula (IV) and a basic compound: wherein R 15 and R 16 may be the same or different and independently represent a hydrogen atom or a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or R 15 and R, together form a cyclic structure represented by (̵CH 2 )̵ n wherein n represents a positive integer of not less than 3) or a cyclic structure formed by substituting an alkyl group for a hydrogen atom in the structure represented by (̵CH 2 )̵ n (wherein n represents a positive integer of not less than 3), R 17 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, a furyl group, a pyridyl group or a 2-styryl group, and R 18 represents a hydrogen atom; coating said photosensitive resin solution on said polymer material layer to form a photosensitive resin layer; pattern-exposing said photosensitive resin layer; heating the pattern-exposed resin layer; exposing the entire surface of the heated resin layer; developing the entirely exposed resin layer with an aqueous alkaline solution to form a photosensitive resin pattern; and selectively removing an exposed portion of said polymer material layer by dry etching by using said photosensitive resin pattern as a mask.

Claim 56

A method according to claim 46, characterized in that said pattern exposure is performed by using deep UV light.

Claim 57

A method according to claim 46, characterized in that heating of the pattern-exposed resin layer is performed at a temperature of 60 C to 150 C.

Claim 58

A method according to claim 46, characterized in that entire-surface exposure of said resin layer is performed by using light having a wavelength of not more than 450 nm.

Claim 59

A semiconductor device having a pattern formed by using a photosensitive composition according to any one of claims 1, 2, 4, 6, 8, 10, 12, 14 and 16 in accordance with a method according to claim 18.

Claim 60

A semiconductor device having a pattern formed by using a photosensitive composition according to any one of claims 2, 4, 8, 10, 14 and 16 in accordance with a method according to claim 20.

Claim 61

A semiconductor device having a pattern formed by using a photosensitive composition according to claim 1 in accordance with a method according to claim 20.

Claim 62

A semiconductor device having a pattern formed by using a photosensitive composition according to claim 6 in accordance with a method according to claim 28.

Claim 63

A semiconductor device having a pattern formed by using a photosensitive composition according to claim 4 in accordance with a method according to claim 34.

Claim 64

A semiconductor device having a pattern formed by using a photosensitive composition according to claim 2 in accordance with a method according to claim 38.

Claim 65

A semiconductor device having a pattern formed by using a photosensitive composition according to claim 8 in accordance with a method according to claim 42.

Claim 66

A semiconductor device having a pattern formed by using a photosensitive composition according to claim 10 in accordance with a method according to claim 46.