EP0395886A2
Expired / Lapsed
EP
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Memory cell and multidimensinal memory device constituted by arranging the memory cells
Assignee: Olympus Corp
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Filing: 1990-03-29
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Granted: —
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Expires: 2010-03-29
Abstract
Abstract A memory cell (10) includes a nonlinear conductivity element (12) constituted by an insulating layer (16; 56; 102) and conductor layers (18a, 18b; 86c, 100) opposite to each other to sandwich the insulating layer (16; 56; 102), and a charge holding element (Ca) which has charge holding characteristics, and is connected in series with the nonlinear conductivity element (12). When the plurality of memory cells (10) are arranged in a matrix form on an XY plane, a two-dimensional memory device (28) can be provided. In addition, when a plurality of layers including the plurality of memory cells (10) arranged in a matrix form are stacked, a three-dimensional memory device (38; 52) can be provided.
Inventors
- 👤 Yoshinori Oota
- 👤 Takao Okada
- 👤 Yoshiyuki Mimura
- 👤 Hidetoshi Yamada
- 👤 Takashi Mihara
- 👤 Yasuo Isono
- 👤 Masamichi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 08:29
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C27/00; G11C27/02; G11C27/024
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
59 words
A memory cell characterized by comprising: a nonlinear conductivity element (12) including an insulating layer (16; 56; 102) and conductor layers (18a, 18b; 86c, 100) which sandwich said insulating layer (16, 56, 102), and are opposite to each other; and a charge holding element (Ca) having charge holding characteristics and connected in series with said nonlinear conductivity element (12).
Claim 2
Dependent Claim
59 words
A memory cell characterized by comprising: a nonlinear conductivity element (12) including an insulating layer (16; 56; 102) and conductor layers (18a, 18b; 86c, 100) which sandwich said insulating layer (16, 56, 102), and are opposite to each other; and a charge holding element (Ca) having charge holding characteristics and connected in series with said nonlinear conductivity element (12).
Claim 3
Dependent Claim
20 words
The memory cell according to claim 1, characterized in that said insulating layer (16; 56; 102) includes a Langmuir-Blodgett film.
Claim 4
Dependent Claim
81 words
The memory cell according to claim 1, characterized in that said charge holding element (Ca) includes: a diffusion layer (92; 114) formed along a surface of a groove (112) formed in a surface of a semiconductor substrate (14); an insulating film (94; 116) formed to cover the surface of the groove (112) on which said diffusion layer (92; 114) is formed; and a conductive polycrystal member (96; 118; 124) deposited on said insulating film (94; 116) to fill the groove (112).
Claim 5
Dependent Claim
93 words
The memory cell according to claim 1, characterized in that said charge holding element (Ca) includes: a first insulating film (136) formed to cover the surface of the groove (112) formed in the surface of said semiconductor substrate (14); a first conductive polycrystal member (130) deposited on said first insulating film (136) to have a predetermined thickness; a second insulating film (134) formed to cover a surface of said first conductive polycrystal member (130); and a second conductive polycrystal member (132) deposited on said second insulating film (134) to fill the groove (112).
Claim 6
Dependent Claim
95 words
The memory cell according to claim 1, characterized in that said charge holding element (Ca) includes: a first insulating film (150; 166; 184) formed on a semiconductor substrate (14); a first conductive polycrystal member (144; 160; 178) formed on said first insulating film (150; 166; 184), said first conductive polycrystal member having a large surface area; a second insulating film (146; 162; 180) formed to cover a surface of said conductive polycrystal member (144; 160; 178); and a second conductive polycrystal member (148; 164; 182) deposited to cover said second insulating film (146; 162; 180).
Claim 7
Dependent Claim
39 words
The memory cell according to claim 1, characterized in that said charge holding element (Ca) includes: an insulating film (200) essentially consisting of Ta₂O₅; and conductive layers (202, 204) opposite to each other to sandwich said insulating film (200).
Claim 8
Dependent Claim
137 words
A memory device characterized by comprising: a plurality of memory cells arranged in a matrix form on an XY plane, each of said memory cells including a nonlinear conductivity element (12) having an insulating layer (16; 56; 102) and conductor layers (18a, 18b; 86c, 100) opposite to each other to sandwich said insulating layer (16; 56; 102), and a charge holding element (Ca) having charge holding characteristics and connected in series with said nonlinear conductivity element (12); a plurality of X electrode lines, each of which commonly connects said memory cells arranged in a single X row; a plurality of Y electrode lines, each of which commonly connects said memory cells arranged in a single Y column; and a read capacitor (Cb; Ca₁₀₄, Ca₁₀₅, Ca₁₀₆) arranged on one of said plurality of X and Y electrode lines.
Claim 9
Dependent Claim
137 words
A memory device characterized by comprising: a plurality of memory cells arranged in a matrix form on an XY plane, each of said memory cells including a nonlinear conductivity element (12) having an insulating layer (16; 56; 102) and conductor layers (18a, 18b; 86c, 100) opposite to each other to sandwich said insulating layer (16; 56; 102), and a charge holding element (Ca) having charge holding characteristics and connected in series with said nonlinear conductivity element (12); a plurality of X electrode lines, each of which commonly connects said memory cells arranged in a single X row; a plurality of Y electrode lines, each of which commonly connects said memory cells arranged in a single Y column; and a read capacitor (Cb; Ca₁₀₄, Ca₁₀₅, Ca₁₀₆) arranged on one of said plurality of X and Y electrode lines.
Claim 10
Dependent Claim
43 words
The memory device according to claim 7, characterized in that a plurality of layers including said plurality of memory cells arranged in a matrix form on the XY plane are stacked in a Z direction to constitute a three-dimensional memory device (38; 52).
Claim 11
Dependent Claim
22 words
The memory device according to claim 7 or 8, characterized in that said insulating layer (16; 56; 102) includes a Langmuir-Blodgett film.
Claim 12
Dependent Claim
83 words
The memory device according to claim 7 or 8, characterized in that said charge holding element (Ca) includes: a diffusion layer (92; 114) formed along a surface of a groove (112) formed in a surface of a semiconductor substrate (14); an insulating film (94; 116) formed to cover the surface of the groove (112) on which said diffusion layer (92; 114) is formed; and a conductive polycrystal member (96; 118; 124) deposited on said insulating film (94; 116) to fill the groove (112).
Claim 13
Dependent Claim
95 words
The memory device according to claim 7 or 8, characterized in that said charge holding element (Ca) includes: a first insulating film (136) formed to cover the surface of the groove (112) formed in the surface of said semiconductor substrate (14); a first conductive polycrystal member (130) deposited on said first insulating film (136) to have a predetermined thickness; a second insulating film (134) formed to cover a surface of said first conductive polycrystal member (130); and a second conductive polycrystal member (132) deposited on said second insulating film (134) to fill the groove (112).
Claim 14
Dependent Claim
97 words
The memory device according to claim 7 or 8, characterized in that said charge holding element (Ca) includes: a first insulating film (150; 166; 184) formed on a semiconductor substrate (14); a first conductive polycrystal member (144; 160; 178) formed on said first insulating film (150; 166; 184), said first conductive polycrystal member having a large surface area; a second insulating film (146; 162; 180) formed to cover a surface of said conductive polycrystal member (144; 160; 178); and a second conductive polycrystal member (148; 164; 182) deposited to cover said second insulating film (146; 162; 180).
Claim 15
Dependent Claim
20 words
The memory device according to claim 12, characterized in that said first conductive polycrystal member (144) has a T-shaped section.
Claim 16
Dependent Claim
20 words
The memory device according to claim 12, characterized in that said first conductive polycrystal member (160) has an H-shaped section.
Claim 17
Dependent Claim
26 words
The memory device according to claim 12, characterized in that said first conductive polycrystal member (178) has a sectional shape obtained by stacking two T-shaped layers.
Claim 18
Dependent Claim
41 words
The memory device according to claim 7 or 8, characterized in that said charge holding element (Ca) includes: an insulating film (200) essentially consisting of Ta₂O₅; and conductive layers (202, 204) opposite to each other to sandwich said insulating film (200).
References Cited (Backward Citations)
No citation records indexed.
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