EP0391636A2 — Method of correcting proximity effects

Claim 1

Independent Claim 192 words

A method of correcting design patterns in cells, having hierarchical structure and corresponding to exposure patterns, for proximity effects when exposing resins coated on a substrate to a charged-particle beam or to light, said method comprising the steps of: providing a first frame zone (19, 21, 23) having a predetermined width (h) inside the boundary (2, 3, 4) of each cell (B, C); providing a second frame zone (20, 22, 24) having a predetermined width (h) inside said first frame zone; and performing proximity effect correction operations such that a pattern in said second frame zone and a pattern inside said second frame zone are used as a pattern to be corrected and a pattern in said first frame zone is used as a reference pattern when correcting pattern data in said each cell for proximity effects and a pattern in said first frame zone in said each cell is added to the pattern to be corrected and a pattern in said second frame zone in said each cell is used as a reference pattern when correcting pattern data in a cell (A, B) directly overlying said each cell for proximity effect.

Claim 2

Independent Claim 192 words

A method of correcting design patterns in cells, having hierarchical structure and corresponding to exposure patterns, for proximity effects when exposing resins coated on a substrate to a charged-particle beam or to light, said method comprising the steps of: providing a first frame zone (19, 21, 23) having a predetermined width (h) inside the boundary (2, 3, 4) of each cell (B, C); providing a second frame zone (20, 22, 24) having a predetermined width (h) inside said first frame zone; and performing proximity effect correction operations such that a pattern in said second frame zone and a pattern inside said second frame zone are used as a pattern to be corrected and a pattern in said first frame zone is used as a reference pattern when correcting pattern data in said each cell for proximity effects and a pattern in said first frame zone in said each cell is added to the pattern to be corrected and a pattern in said second frame zone in said each cell is used as a reference pattern when correcting pattern data in a cell (A, B) directly overlying said each cell for proximity effect.

Claim 3

Dependent Claim 46 words

A proximity effect correcting method according to Claim 1 wherein in respect of a plurality of identical cells, proximity effect correction operations are carried out for one of said identical cells, and the results of the proximity effect correction operations are applied to other identical cells.

Claim 4

Dependent Claim 126 words

A proximity effect correcting method according to Claim 1 wherein in respect of a cell (E) of array structure having basic unit in the form of an element cell (50, 51, ... 61), all element cells (60, 61) enclosed by a series of element cells (50 to 59) in said array structure cell (E) are each provided with a frame zone (63) present outside its boundary and having a predetermined width, and proximity effect correction operations are performed, when correcting pattern data in said enclosed element cell for proximity effects, such that pattern data in said enclosed element cell are all used as a pattern to be corrected and pattern data in said frame zone outside said enclosed element cell is used as a reference pattern.

Claim 5

Dependent Claim 112 words

A proximity effect correction method according to Claim 1 wherein in respect of a cell (C) having a predetermined size, proximity effect correction operations are carried out for all patterns excepting those in the first frame zone (21) inside the boundary of said cell such that a zone inside said first frame zone is divided into a plurality of sub-zones (30, 31), each sub-zone is provided with a third frame zone (32, 33) present outside its boundary and having a predetermined width (h), pattern data in said each sub-zone are all used as a pattern to be corrected and a pattern in said third frame zone is used as a reference pattern.

Claim 6

Independent Claim 240 words

A method of correcting design patterns in cells of array structure having basic unit in the form of an element cell for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light, said method comprising the steps of: dividing an element cell (50 to 61) into nine rectangular zones (S1 to S4, t1, t2, u1, u2, w) in 3 x 3 matrix, and defining a second cell (S) by putting together four different rectangular zones (S1 to S4) which are contiguous to each other and at corners of four different element cells contiguous to each other, defining third and fourth cells (T, U) by putting together two different rectangular zones (t1, t2; u1, u2) which are contiguous to each other and at sides of different element cells, and defining a first cell (W) with a central rectangular zone (w) of said element cell; providing each of said first to fourth cells with a frame zone (90, 91, 92, 93) having a predetermined width and present outside its boundary; and proximity effect correction operations are carried out, when correcting pattern data in each of said first to fourth cells for proximity effects, such that pattern data in each of said first to fourth cells are all used as a pattern to be corrected and a pattern in said frame zone present outside each of said first to fourth cells is used as a reference pattern.

Claim 7

Independent Claim 240 words

A method of correcting design patterns in cells of array structure having basic unit in the form of an element cell for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light, said method comprising the steps of: dividing an element cell (50 to 61) into nine rectangular zones (S1 to S4, t1, t2, u1, u2, w) in 3 x 3 matrix, and defining a second cell (S) by putting together four different rectangular zones (S1 to S4) which are contiguous to each other and at corners of four different element cells contiguous to each other, defining third and fourth cells (T, U) by putting together two different rectangular zones (t1, t2; u1, u2) which are contiguous to each other and at sides of different element cells, and defining a first cell (W) with a central rectangular zone (w) of said element cell; providing each of said first to fourth cells with a frame zone (90, 91, 92, 93) having a predetermined width and present outside its boundary; and proximity effect correction operations are carried out, when correcting pattern data in each of said first to fourth cells for proximity effects, such that pattern data in each of said first to fourth cells are all used as a pattern to be corrected and a pattern in said frame zone present outside each of said first to fourth cells is used as a reference pattern.

Claim 8

Dependent Claim 42 words

A proximity effect correction method according to Claim 1 wherein the predetermined width of each of said first and second frame zones is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

Claim 9

Dependent Claim 37 words

A proximity effect correction method according to Claim 3 wherein the predetermined width of said frame zone is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

Claim 10

Dependent Claim 38 words

A proximity effect correction method according to Claim 4 wherein the predetermined width of said third frame zone is longer than a typical length affected by proximity effects which is equivalent to scattering length of back scattered electrons.

Claim 11

Dependent Claim 53 words

A proximity effect correction method according to Claim 3 or 5 wherein when, in respect of a cell having no array structure, patterns in said cell are arranged two-dimensionally periodically, said cell is reconstructed as a set of a plurality of array element cells and thereafter proximity effect correction operations are carried out.

Claim 12

Dependent Claim 47 words

A proximity effect correction method according to Claim 3 or 5 further comprising the step of further dividing each array element cell in the cell having array structure into a plurality of sub-zones and correcting patterns in each sub-zone of said array element cell for proximity effects.

Method of correcting proximity effects

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