EP0390704A2
Expired / Lapsed
EP
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Tunnel junction type Josephson device and method for fabricating the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-04-02
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Granted: —
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Expires: 2010-04-02
Abstract
Abstract A tunnel junction type Josephson device includes a pair of superconductor layers (2,4) formed of a compound oxide superconductor material and an insulator layer (3) formed between the pair of superconductor layers (2,4). The insulator layer (3) is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.
Inventors
- 👤 Hidenori Nakanishi
- 👤 Saburo Tanaka
- 👤 Hideo Itozaki
- 👤 Shuji Yazu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 12:14
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0912; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; H10N60/10; H10N60/12; H10N60/124; H10N60/80; H10N60/85; H10N60/855; H10N60/857
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
72 words
A tunnel junction type Josephson device including a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers, wherein said insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of said superconductor layers but with an atomic ratio which does not present a superconductivity characteristics.
Claim 2
Dependent Claim
72 words
A tunnel junction type Josephson device including a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers, wherein said insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of said superconductor layers but with an atomic ratio which does not present a superconductivity characteristics.
Claim 3
Dependent Claim
37 words
A tunnel junction type Josephson device claimed in Claim 1 wherein each of said pair of superconductor layers is formed of YBa₂Cu₃O 7-x , and said insulator layer is formed of Y₂Ba₁Cu₁O 5-y or Y₁Ba₃Cu₂O z .
Claim 4
Dependent Claim
38 words
A tunnel junction type Josephson device claimed in Claim 1 wherein each of said pair of superconductor layers is formed of RBa₂Cu₃O 7-x (where R represents a lanthanide), and said insulator layer is formed of R₂BaCuO 7-x .
Claim 5
Dependent Claim
25 words
A tunnel junction type Josephson device claimed in any of Claims 1 to 3 wherein said insulator layer has the thickness of 20Å to 100Å.
Claim 6
Dependent Claim
29 words
A tunnel juntion type Josephson device claimed in any of Claims 1 to 4 wherein each of said pair of superconductor layers has the thickness of 1,000Å to 3,000Å.
Claim 7
Dependent Claim
36 words
A tunnel junction type Josephson device claimed in any of Claims 1 to 5 wherein one of said pair of superconductor layers is formed on a SrTiO₃ single crystal substrate or a MgO single crystal substrate.
Claim 8
Independent Claim
79 words
A method for fabricating a tunnel junction type Josephson device including a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers, wherein the insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers, and wherein the superconductor layers and the insulator layer are continuously formed while supplying oxygen.
Claim 9
Independent Claim
79 words
A method for fabricating a tunnel junction type Josephson device including a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers, wherein the insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers, and wherein the superconductor layers and the insulator layer are continuously formed while supplying oxygen.
Claim 10
Dependent Claim
57 words
A method claimed in Claim 7 wherein each of said pair of superconductor layers is formed by a physical deposition using a target having a composition enabling to form a deposited layer having superconductivity, and said insulator layer is formed by a physical deposition using a target having a composition enabling to form an insulative deposited layer.
Claim 11
Dependent Claim
102 words
A method claimed in Claim 7 wherein each of said pair of superconductor layers is formed by a physical deposition using a target composed of a powdered carbonate of each of Y and Ba and a powdered oxide of Cu mixed with a proportion which allows a deposited layer to have a composition of YBa₂Cu₃O 7-y and said insulator layer is formed by a physical deposition using a target a powdered carbonate of each of Y and Ba and a powdered oxide of Cu mixed with a proportion which enables to form a deposited layer having a composition of Y₂Ba₁Cu₁O 5-y .
Claim 12
Independent Claim
42 words
A method claimed in any of Claims 7 to 9 wherein said insulator layer is formed to have the thickness of 20Å to 100Å, and each of said pair of superconductor layers is formed to have the thickness of 1,000Å to 3,000Å.
Claim 13
Independent Claim
32 words
A method claimed in any of Claims 7 to 10 wherein one of said pair of superconductor layers is formed on a SrTiO₃ single crystal substrate or a MgO single crystal substrate.
References Cited (Backward Citations)
No citation records indexed.
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