EP0388733A1
Expired / Lapsed
EP
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Method of fabricating semiconductor devices
Assignee: Fujitsu Ltd
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Filing: 1990-03-09
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Granted: —
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Expires: 2010-03-09
Abstract
Abstract A method of fabricating semiconductor devices comprising the steps of selectively forming a mask layer (3) composed of silicon oxynitride (2) on a silicon substrate (1), and epitaxially growing a III-V compound semiconductor layer (5) upon the silicon substrate (1) in which the mask layer (3) is not formed (4).
Inventors
- 👤 Kanetake Takasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 21:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/24; H10P14/27; H10P14/271; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
49 words
A method of fabricating semiconductor devices comprising the steps of: selectively forming a mask layer (3) composed of silicon oxynitride (2) on a silicon substrate (1); and epitaxially growing a III-V compound semiconductor layer (5) upon said silicon substrate (1) in which said mask layer (3) is not formed.
Claim 2
Independent Claim
49 words
A method of fabricating semiconductor devices comprising the steps of: selectively forming a mask layer (3) composed of silicon oxynitride (2) on a silicon substrate (1); and epitaxially growing a III-V compound semiconductor layer (5) upon said silicon substrate (1) in which said mask layer (3) is not formed.
Claim 3
Dependent Claim
37 words
A method as set forth in claim 1, wherein a composition ratio of oxygen atom (N₂) to nitrogen atom and oxygen atom (n₁ + n₂) in said silicon oxynitride (2) is 0.1≦ n₂/(n₁ + n₂) ≦ 0.5.
Claim 4
Dependent Claim
26 words
A method as set forth in claim 1 or 2, wherein said III-V compound semiconductor layer (5) is grown by a MOCVD (metalorganic chemical-vapor deposition) method.
Claim 5
Dependent Claim
26 words
A method as set forth in claim 1 or 2, wherein said III-V compound semiconductor layer (5) is grown by a MBE (molecular beam epitaxy) method.
Claim 6
Independent Claim
27 words
A method as set forth in anyone of claims 1 to 4, wherein said mask layer (3) has a thickness of between 500 Å and 2000 Å.
Claim 7
Independent Claim
29 words
A method as set forth in anyone of claims 1 to 5, wherein said compound semiconductor layer (5) has a layer thickness of between 2 µm and 5 µm.
Claim 8
Independent Claim
22 words
A method as set forth in anyone of claims 1 to 6, which is used for fabricating metal semiconductor field-effect transistors (10).
Claim 9
Independent Claim
21 words
A method as set forth in anyone of claims 1 to 6, which is used for fabricating a light-emitting diode (11).
Claim 10
Independent Claim
21 words
A method as set forth in anyone of claims 1 to 6, which is used for fabricating a photo detector (12).
References Cited (Backward Citations)
No citation records indexed.
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