EP0388343A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Chemically amplified photoresist
Assignee: International Business Machines Corp
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Filing: 1990-02-02
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Granted: —
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Expires: 2010-02-02
Abstract
Abstract Resists for use in photon, electron beam and x-ray exposure devices comprise a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate salts of imides.
Inventors
- 👤 William Ross Brunsvold
- 👤 Christopher John Knors
- 👤 Ranee Wai-Ling Kwong
- 👤 Steve Seiichi Miura
- 👤 Melvin Warren Montgomery
- 👤 Wayne Martin Moreau
- 👤 Harbans Singh Sachdev
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 04:11
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/111; Y10S430/114; Y10S430/12; Y10S430/121; Y10S430/122; Y10S430/126; Y10S430/127
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
53 words
A resist for use in photon, electron beam and x-ray exposure devices comprising (a) a polymeric or molecular composition, the solubility of said composition being dependent upon the presence of acid removable protecting groups, and (b) a polymeric or molecular composition sulfonic acid precursor which generates a strong acid upon exposure to radiation.
Claim 2
Dependent Claim
53 words
A resist for use in photon, electron beam and x-ray exposure devices comprising (a) a polymeric or molecular composition, the solubility of said composition being dependent upon the presence of acid removable protecting groups, and (b) a polymeric or molecular composition sulfonic acid precursor which generates a strong acid upon exposure to radiation.
Claim 3
Dependent Claim
110 words
The resist according to claim 1 wherein the sulfonic acid precursor is a sulfonyloxyimide having the structural formula where C₁ and C₂ may form a single or double band wherein R is selected from -CF₃,-CF₂CF₃, -CF₂CF₂H, -(CF₂)-Z n where n=1 to 4, where Z is H, alkyl or aryl, where m is from 1 to 5, and where X and Y (1) form a cyclic or polycyclic ring which may contain one or more hetero atoms, (2) form a fused aromatic ring, (3) may be independently H, alkyl or aryl, (4) may be attached to another sulfonyloxyimide containing residue, or (5) may be attached to a polymeric chain or backbone.
Claim 4
Dependent Claim
25 words
The resist according to claim 2 wherein the sulfonic acid precursor is present in an amount from 1 - 20% by weight of the composition.
Claim 5
Dependent Claim
25 words
The resist according to claim 3 wherein the sulfonic acid precursor is present in an amount from 5 - 10% by weight of the composition.
Claim 6
Dependent Claim
19 words
The resist according to claim 1 wherein said composition comprises a soluble polymer and a molecular solubility inhibiting compound
Claim 7
Dependent Claim
17 words
The resist according to claim 5 wherein the molecular solubility inhibiting compound is bisphenol A di-t-butyl carbonate.
Claim 8
Dependent Claim
24 words
The resist according to claim 1 wherein a sufficient amount of substituted benzene compound is provided to enhance the formation of the strong acid.
Claim 9
Dependent Claim
25 words
The resist according to claim 7 wherein the substituted benzene compound is present in an amount from 1 to 3% by weight of the composition.
Claim 10
Dependent Claim
30 words
The resist according to claim 7 wherein the substituted benzene compound is selected from the group consisting of hydroquinone, resorcinol, pyrogallol, p-bisphenol A, 2,6-di-t-butyl-4- methylphenol, 3,3′,5,5′-tetra-t-butylbisphenol A, and methylene bishydroquinone.
Claim 11
Dependent Claim
26 words
The resist in accordance with claim 1 wherein the sulfonic acid precursor is selected from the group consisting of trifluoromethylsulfonyloxy-7-oxabicyclo [2.2.1% hept-5-ene-2,3-dicarboximide and trifluoromethylsulfonyloxy-bicyclo-[2.2.2]-hept-5-ene -2,3 dicarboximide.
Claim 12
Dependent Claim
17 words
The resist according to claim 1 which has an absorbance at 200 - 300 nm below 0.8.
References Cited (Backward Citations)
No citation records indexed.
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