Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
86 words
A semiconductor device comprising: a barrier film (5, 6) deposited on the bottom and side wall of a contact hole (4) opened in an insulating film (3) deposited on a substrate (3) at a predetermined position; a first metal film (7a) filled in said contact hole; and a second metal film (8) of low resistance for forming an interconnection which passes above said contact hole filled in with said first metal film, said barrier metal suppressing interaction between said first metal film and the substrate/insulating film.
Claim 2
Dependent Claim
86 words
A semiconductor device comprising: a barrier film (5, 6) deposited on the bottom and side wall of a contact hole (4) opened in an insulating film (3) deposited on a substrate (3) at a predetermined position; a first metal film (7a) filled in said contact hole; and a second metal film (8) of low resistance for forming an interconnection which passes above said contact hole filled in with said first metal film, said barrier metal suppressing interaction between said first metal film and the substrate/insulating film.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein said first metal film is made of an alloy having a low melting point.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said barrier film is made of a film having a transition metal compound as its main content.
Claim 5
Dependent Claim
19 words
A semiconductor device according to claim 2, wherein said alloy having a low melting point is an aluminium-based alloy.
Claim 6
Dependent Claim
19 words
A semiconductor device according to claim 2, wherein said alloy having a low melting point is a Cu-based alloy.
Claim 7
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said second metal film is made of an aluminum-silicon-copper-based alloy.
Claim 8
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said barrier film is composed of a transition metal film and nitride film of the transition metal.
Claim 9
Independent Claim
112 words
A method of manufacturing a semiconductor device comprising the steps of: opening a contact hole (4) at a predetermined position in an insulating film (3) deposited on a semiconductor substrate (1), then forming a barrier film in the bottom and side wall of said contact hole for suppressing interaction between said semiconductor substrate and insulating film; filling said contact hole with a first metal film while heating said semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning said second metal film to form an interconnection which passes said contact hole that has been filled in with said first metal film.
Claim 10
Independent Claim
112 words
A method of manufacturing a semiconductor device comprising the steps of: opening a contact hole (4) at a predetermined position in an insulating film (3) deposited on a semiconductor substrate (1), then forming a barrier film in the bottom and side wall of said contact hole for suppressing interaction between said semiconductor substrate and insulating film; filling said contact hole with a first metal film while heating said semiconductor substrate at a predetermined temperature; and depositing a second metal film over the surface of the semiconductor device and patterning said second metal film to form an interconnection which passes said contact hole that has been filled in with said first metal film.