EP0387456A2
Expired / Lapsed
EP
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Method for vapor-phase growth of an oxide thin film
Assignee: Toshiba Corp
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Filing: 1989-12-22
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Granted: —
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Expires: 2009-12-22
Abstract
Abstract A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas. In the deposition of a thin film, the organic metal source gas and oxygen-containing gas are alternately fed into the reactor (10).
Inventors
- 👤 Kazuhiro c/o K.K. Toshiba Eguchi
- 👤 Takatosi c/o K.K. Toshiba Nakanisi
- 👤 Rie c/o K.K. Toshiba Satoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 18:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/22; C23C16/30; C23C16/40; C23C16/408; C23C16/45561; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; H10N60/0464; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/734
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
80 words
A method for vapor-phase growth of an oxide thin film comprising: supplying an organic metal source gas containing metal elements for an oxide thin film and an oxygen-containing gas having oxidizability into a reactor (10) accommodating a substrate (11); and causing the gases to pyrolyze, thereby depositing a thin film on said substrate (11); characterized in that said organic metal source gas and said oxygen-containing gas are selectively introduced into the reactor (10) during the deposition of said thin film.
Claim 2
Independent Claim
80 words
A method for vapor-phase growth of an oxide thin film comprising: supplying an organic metal source gas containing metal elements for an oxide thin film and an oxygen-containing gas having oxidizability into a reactor (10) accommodating a substrate (11); and causing the gases to pyrolyze, thereby depositing a thin film on said substrate (11); characterized in that said organic metal source gas and said oxygen-containing gas are selectively introduced into the reactor (10) during the deposition of said thin film.
Claim 3
Dependent Claim
25 words
The method according to claim 1, characterized in that said organic metal source gas and said oxygen-containing gas are alternately introduced into said reactor (10).
Claim 4
Dependent Claim
36 words
The method according to claim 2, characterized in that said source gas contains a plurality of organic metal compounds and said organic metal source gas, and said oxygen-containing gas are alternately introduced into said reactor (10).
Claim 5
Dependent Claim
39 words
The method according to claim 2, characterized in that said organic metal source gas contains a plurality of organic metal compounds, and each of said organic metal compounds and said oxygen-containing gas are alternately introduced into said reactor (10).
Claim 6
Dependent Claim
33 words
The method according to claim 1, characterized in that said oxygen-containing gas is at least one selected from the group consisting of an O₂ gas, ozone, NO₂ gas, N₂O gas and water vapor.
Claim 7
Dependent Claim
20 words
The method according to claim 1, characterized in that said organic metal source gas is carried by an inert gas.
Claim 8
Independent Claim
77 words
A method for vapor-phase growth of an oxide thin film comprising: supplying an organic metal source gas containing metal elements for a thin film and an oxygen-containing gas having oxidizability into a reactor (10) accommodating a substrate (11); and causing the gases to pyrolyze, thereby depositing a thin film on said substrate (11); wherein said oxygen-containing gas is activated at a different portion from the reactor (10), thereafter said oxygen-containing gas is introduced into the reactor (10).
Claim 9
Independent Claim
77 words
A method for vapor-phase growth of an oxide thin film comprising: supplying an organic metal source gas containing metal elements for a thin film and an oxygen-containing gas having oxidizability into a reactor (10) accommodating a substrate (11); and causing the gases to pyrolyze, thereby depositing a thin film on said substrate (11); wherein said oxygen-containing gas is activated at a different portion from the reactor (10), thereafter said oxygen-containing gas is introduced into the reactor (10).
Claim 10
Dependent Claim
27 words
The method according to claim 7, characterized in that activation of said oxygen-containing gas is performed by exciting said oxygen-containing gas by means of a microwave discharge.
Claim 11
Dependent Claim
31 words
The method according to claim 8, characterized in that said oxygen-containing gas is excited at a portion which is located between said reactor and a supply source for said oxygen-containing gas.
Claim 12
Dependent Claim
25 words
The method according to claim 7, characterized in that said organic metal source gas and said oxygen-containing gas are selectively introduced into said reactor (10).
Claim 13
Dependent Claim
25 words
The method according to claim 10, characterized in that said organic metal source gas and said oxygen-containing gas are alternately introduced into said reactor (10).
Claim 14
Dependent Claim
33 words
The method according to claim 7, characterized in that said oxygen-containing gas is at least one selected from the group consisting of an O₂ gas, ozone, NO₂ gas, N₂O gas and water vapor.
Claim 15
Dependent Claim
20 words
The method according to claim 7, characterized in that said organic metal source gas is carried by an inert gas.
Claim 16
Independent Claim
90 words
An apparatus for vapor-phase growth of a thin film, comprising: a reactor (10) for accommodating a substrate to be treated therein; source container (41, 42, 43) for supplying an organic metal source gas into said reactor; heating means (92) for heating the organic metal source containers; and connecting means (18, 51, 52, 53) for connecting between said organic metal source container (41, 42, 43) and said reactor (10); characterized by further comprising a heating container (60) for accommodating and heating a whole or a major section of said connecting means.
Claim 17
Independent Claim
90 words
An apparatus for vapor-phase growth of a thin film, comprising: a reactor (10) for accommodating a substrate to be treated therein; source container (41, 42, 43) for supplying an organic metal source gas into said reactor; heating means (92) for heating the organic metal source containers; and connecting means (18, 51, 52, 53) for connecting between said organic metal source container (41, 42, 43) and said reactor (10); characterized by further comprising a heating container (60) for accommodating and heating a whole or a major section of said connecting means.
Claim 18
Dependent Claim
49 words
The apparatus according to claim 14, characterized in that said connecting means (18, 51, 52, 53) has a piping (18) connecting said reactor (10) and said container (41, 42, 43), and a connecting portion between said reactor (10) and said piping (18) is contained within said heating container (60).
Claim 19
Dependent Claim
45 words
The apparatus according to claim 14, characterized in that said heating container (60) is set at a temperature higher than that of said organic metal source container (41, 42, 43), but at a temperature lower than that of said substrate (11) in said reactor (10).
Claim 20
Dependent Claim
15 words
The apparatus according to claim 14, characterized in that said heating container has an oven.
Claim 21
Independent Claim
83 words
An apparatus for vapor-phase growth of a thin film, comprising: a reactor for accommodating a substrate to be treated therein; and a plurality of organic metal source containers for supplying a plurality of kinds of organic metal source gases into said reactor; heating means for heating the organic metal source containers; characterized by further comprising control means (81, 82, 83, 84, 85, 86) for individually controlling the heating temperature of said respective organic metal source container (41, 42, 43) at a predetermined level.
Claim 22
Independent Claim
83 words
An apparatus for vapor-phase growth of a thin film, comprising: a reactor for accommodating a substrate to be treated therein; and a plurality of organic metal source containers for supplying a plurality of kinds of organic metal source gases into said reactor; heating means for heating the organic metal source containers; characterized by further comprising control means (81, 82, 83, 84, 85, 86) for individually controlling the heating temperature of said respective organic metal source container (41, 42, 43) at a predetermined level.
Claim 23
Dependent Claim
17 words
The apparatus according to claim 18, characterized in that said heating means (92) includes a heater (92).
Claim 24
Dependent Claim
67 words
The apparatus according to claim 18, characterized in that said control means (81, 82, 83, 84, 85, 86) comprises a temperature sensor (84, 85, 86) for detecting the temperature of said respective organic metal source container, and a temperature controller (81, 82, 83) for controlling a heating quantity by said heating means so that a detecting value of said sensor (84, 85, 86) is a predetermined value.
Claim 25
Dependent Claim
24 words
The apparatus according to claim 20, characterized in that said temperature controller (81, 82, 83) performs a proportional plus integral plus derivative control action.
Claim 26
Dependent Claim
55 words
The apparatus according to claim 18, characterized by further comprising a connecting means (18, 51, 52, 53) for connecting between said organic metal source containers (41, 42, 43) and said reactor (10), and a heating container (60) for accommodating and heating a whole or a major section of said connecting means (18, 51, 52, 53).
Claim 27
Dependent Claim
52 words
The apparatus according to claim 22, characterized in that said connecting means (18, 51, 52, 53) has pipings (18) connecting said reactor and said organic metal source containers (41, 42, 43), and connecting portions which are located between said reactor (10) and said pipings (18) are contained within said heating container (60).
Claim 28
Dependent Claim
45 words
The apparatus according to claim 22, characterized in that said heating container (60) is set at a temperature higher than those of said organic metal source containers (41, 42, 43) but at a temperature lower than that of said substrate (11) in said reactor (10).
Claim 29
Dependent Claim
17 words
The apparatus according to claim 22, characterized in that said heating container (60) has an oven (60).
Claim 30
Dependent Claim
44 words
The apparatus according to claim 14, characterized by further comprising activating means (61 to 68) for activating said oxygen-containing gas in a portion (69) which is different from said reactor (10), so that the activated oxygen-containing gas may be introduced into said reactor (10).
Claim 31
Dependent Claim
23 words
The apparatus according to claim 26, characterized in that said activating means (61 to 68) includes a microwave discharging equipment (61 to 68).
References Cited (Backward Citations)
No citation records indexed.
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