EP0383215A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Epitaxial-growth structure for a semiconductor light-emitting device, and semiconductor light-emitting device using the same
Assignee: NTT Inc
•
Filing: 1990-02-10
•
Granted: —
•
Expires: 2010-02-10
Abstract
Abstract An epitaxial growth structure for a semiconductor light-emitting device includes a sapphire substrate having a (01 1 0) face (substantially M face), and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate. A semiconductor light-emitting device includes the sapphire substrate having a (01 1 0) face (substantially M face), the wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate, an insulating film formed on the single crystal film, and a metal electrode formed on the insulating film.
Inventors
- 👤 Takashi Matsuoka
- 👤 Toru Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 16:17
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/3202; H01S5/32025; H01S5/323; H01S5/32308; H01S5/32341; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/817; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/36; H10P14/3602; H01S2304/00; H01S2304/04; H01S5/02; H01S5/0206; H01S5/0213; H01S5/022; H01S5/0233; H01S5/0234
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
40 words
An epitaxial growth structure for a semiconductor light-emitting device, comprising: a sapphire substrate having a substantially (01 1 0) face (M face); and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate.
Claim 2
Dependent Claim
40 words
An epitaxial growth structure for a semiconductor light-emitting device, comprising: a sapphire substrate having a substantially (01 1 0) face (M face); and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate.
Claim 3
Dependent Claim
32 words
A structure according to claim 1, wherein said single crystal film consists of In x Ga y Al 1-x-y N (0 ≦ x ≦ 1, 0 ≦ x + y ≦ 1).
Claim 4
Dependent Claim
23 words
A structure according to claim 2, wherein said single crystal film is epitaxially grown in a (01 1 3)-axial direction on said substrate.
Claim 5
Dependent Claim
52 words
A semiconductor light-emitting device comprising: a sapphire substrate having a substantially (01 1 0) face (M face); a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate; an insulating film formed on said single crystal film; and a metal electrode formed on said insulating film.
Claim 6
Dependent Claim
52 words
A semiconductor light-emitting device comprising: a sapphire substrate having a substantially (01 1 0) face (M face); a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on said substrate; an insulating film formed on said single crystal film; and a metal electrode formed on said insulating film.
Claim 7
Dependent Claim
32 words
A device according to claim 4, wherein said single crystal film consists of In x Ga y Al 1-x-y N (0 ≦ x ≦ 1, 0 ≦ x + y ≦ 1).
Claim 8
Dependent Claim
23 words
A device according to claim 5, wherein said single crystal film is epitaxially grown in a <01 1 3>-axial direction on said substrate.
Claim 9
Dependent Claim
57 words
A device according to claim 4, further comprising second and third wurtzite type Group III nitride mixed crystal semiconductor single crystal films arranged and epitaxially grown between said single crystal film and said insulating film, said second single crystal film having a smaller band gap energy than those of said single crystal films at both sides thereof.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.