EP0382203A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Ceramic package type semiconductor device and method of assembling the same
Assignee: Fujitsu Ltd
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Filing: 1990-02-08
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Granted: —
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Expires: 2010-02-08
Abstract
Abstract A ceramic package type semiconductor device (30, 50, 60, 70, 80) comprising: a ceramic substrate (32, 52, 72) having a wiring pattern layer (37, 57, 77) formed on a top surface thereof; at least one semiconductor element (31, 51a-51c, 71) mounted on the ceramic substrate with a top face thereof facing downward and electrically connected to the wiring pattern layer; a metal cap (33, 53, 73) having at least one through-hole (33c, 53 c1 -53 c6 , 73c) corresponding to an external size of the semiconductor element and an end portion (33b, 53b, 73b) thereof soldered to the top surface of the ceramic substrate, so that a top surface of the metal cap and a bottom surface of the semiconductor element fitting into the through-hole form a flat plane: and a heatsink member comprising a plate portion (35a, 55a, 75) which is soldered to the flat plane of the metal cap (33, 53, 73) and the semiconductor element (31, 51, 71) to complete a hermetic sealing of the semiconductor element.
Inventors
- 👤 Nobutaka Shimizu
- 👤 Takehisa Tsujimura
- 👤 Masahiro Sugimoto
- 👤 Shigeki Harada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 22:21
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W70/00; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W76/15; H10W76/157; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
177 words
A semiconductor device (30, 50, 60, 70, 80) comprising: a ceramic substrate (32, 52, 72) having a wiring pattern layer (37, 57, 77) formed on a top surface thereof; at least one semiconductor element (31, 51a-51c, 71) mounted on said ceramic substrate (32, 52, 72) with a top face thereof facing downward and electrically connected to said wiring pattern layer (37, 57, 77); a metal cap (37, 53, 73) having at least one through-hole (33c, 53 c1 -53 c6 , 73c) corresponding to an external size of said semiconductor element (31, 51a-51c, 71) and an end portion (33b, 53b, 73b) thereof soldered to the top surface of said ceramic substrate, so that a top surface of said metal cap (33, 53, 73) and a bottom surface of said semiconductor element fitted into said through-hole form a flat plane; and a heatsink member comprising a plate portion (35a, 55a, 75) soldered to said flat plane of said metal cap (33, 53, 73) and said semiconductor element to complete a hermetic sealing of said semiconductor element (31, 51a-51c, 71).
Claim 2
Dependent Claim
177 words
A semiconductor device (30, 50, 60, 70, 80) comprising: a ceramic substrate (32, 52, 72) having a wiring pattern layer (37, 57, 77) formed on a top surface thereof; at least one semiconductor element (31, 51a-51c, 71) mounted on said ceramic substrate (32, 52, 72) with a top face thereof facing downward and electrically connected to said wiring pattern layer (37, 57, 77); a metal cap (37, 53, 73) having at least one through-hole (33c, 53 c1 -53 c6 , 73c) corresponding to an external size of said semiconductor element (31, 51a-51c, 71) and an end portion (33b, 53b, 73b) thereof soldered to the top surface of said ceramic substrate, so that a top surface of said metal cap (33, 53, 73) and a bottom surface of said semiconductor element fitted into said through-hole form a flat plane; and a heatsink member comprising a plate portion (35a, 55a, 75) soldered to said flat plane of said metal cap (33, 53, 73) and said semiconductor element to complete a hermetic sealing of said semiconductor element (31, 51a-51c, 71).
Claim 3
Dependent Claim
35 words
A semiconductor device according to claim 1, wherein said ceramic substrate (32, 52, 72) is made of a material selected from a group consisting of alumina (Al₂O₃, aluminum nitride (AlN), silicon carbide (SiC) and mullite.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said ceramic substrate (32, 52, 72) is for a pin-grid package.
Claim 5
Dependent Claim
25 words
A semiconductor device according to claim 2, wherein said wiring pattern layer (77) has a single layer structure formed on said alumina ceramic substrate (72).
Claim 6
Dependent Claim
39 words
A semiconductor device according to claim 3, wherein said wiring pattern layer (37, 57) has a multilayer structure of conductive layers and insulating layers laminated one on the other and formed on said aluminum nitride ceramic substrate (32, 52).
Claim 7
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said semiconductor element has a plurality of bump electrodes (31c, 71c), and microleads (39, 79) connected to the plurality of bump electrodes, respectively.
Claim 8
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein said metal cap (33, 53, 73) is made of an alloy selected from a group consisting of Fe-Ni-Co alloy and Fe-Ni alloy.
Claim 9
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein the end portion (33a, 53a) of said metal cap (33, 53) has a flange shape.
Claim 10
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein the end portion (73b) of said metal cap is a portion perpendicular to said top surface (72a) of said ceramic substrate.
Claim 11
Dependent Claim
51 words
A semiconductor device according to claim 1, wherein said heatsink member consists of a plate (75) made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy, AlSi alloy, Cu, Al, and Mo, and is coated with a metal layer for soldering.
Claim 12
Dependent Claim
68 words
A semiconductor device according to claim 1, wherein said heatsink member consists of a plate portion (35a, 55a) made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy, AlSi alloy, Cu, Al, and Mo, and is coated with a metal layer for soldering, and a heat dissipation fin portion (35b, 55b, 35c) is fixed to said plate portion.
Claim 13
Dependent Claim
28 words
A semiconductor device according to claim 11, wherein said fin portion (35b, 55b) is made of a metal selected from a group consisting of Al, AlSi and Cu.
Claim 14
Dependent Claim
17 words
A semiconductor device according to claim 11, wherein said fin portion (35b, 55b) includes concentric disk portions.
Claim 15
Dependent Claim
16 words
A semiconductor device according to claim 11, wherein said fin portion (35c) is a comb-sectioned plate.
Claim 16
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein said fin portion is fixed to said plate portion with a bonding resin.
Claim 17
Dependent Claim
22 words
A semiconductor device according to claim 11, wherein said fin portion (35c) is fixed to said plate portion with a solder (43).
Claim 18
Dependent Claim
26 words
A semiconductor device according to claim 11, wherein said fin portion (35b, 55b) is fixed to said plate (35a, 55a) portion by a friction welding method.
Claim 19
Dependent Claim
50 words
A semiconductor device according to claim 12, wherein said heatsink plate portion (35a) is made of Al-Si, Cu or Al, and an additional plate (62) made of Cu-W or Cu-Mo and having the same size as that of said heatsink plate portion (35a) is placed under said heatsink plate portion.
Claim 20
Dependent Claim
64 words
A semiconductor device according to claim 1, wherein a plurality of semiconductor elements (51a-51c) are mounted on said ceramic substrate (52), said metal cap (53) having through-holes (53 c1 -53 c6 ) corresponding to the semiconductor elements, respectively, so that the top surface of said metal cap (53) and bottom surfaces of said semiconductor elements (51a-51c) fitting into said through-holes form a flat plane.
Claim 21
Independent Claim
238 words
A method of assembling a semiconductor device (30, 50, 60, 70) of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element (31, 51a-51c) on a ceramic substrate (32, 52) with a top face thereof facing downward and electrically connected to a wiring pattern (37, 57) layer of the ceramic substrate (32, 52); placing a solder frame (34, 54) on said ceramic substrate (32, 52) at a peripheral region of the substrate; placing a metal cap (33, 53) having at least one through-hole (33c, 53 c1 -53 c6 ) corresponding to an external size of said semiconductor element, on said solder frame (34, 54), to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap (33, 53) and the bottom surface of said semiconductor element; heating the assembling device to solder said metal cap (33, 53) to said ceramic substrate (32, 52); placing a solder plate (36, 56) on said flat plane of the top surface of said metal cap (33, 53) and the bottom surface of said semiconductor element (31, 51a-51c); placing a plate portion (35a, 55a)of a heatsink member on said solder plate (36, 56); and heating the assembling device to solder said plate portion (35a, 55a) to said metal cap (33, 53) and said semiconductor element (31, 51a-51c), whereby a hermetic sealing of the semiconductor element is completed.
Claim 22
Independent Claim
238 words
A method of assembling a semiconductor device (30, 50, 60, 70) of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element (31, 51a-51c) on a ceramic substrate (32, 52) with a top face thereof facing downward and electrically connected to a wiring pattern (37, 57) layer of the ceramic substrate (32, 52); placing a solder frame (34, 54) on said ceramic substrate (32, 52) at a peripheral region of the substrate; placing a metal cap (33, 53) having at least one through-hole (33c, 53 c1 -53 c6 ) corresponding to an external size of said semiconductor element, on said solder frame (34, 54), to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap (33, 53) and the bottom surface of said semiconductor element; heating the assembling device to solder said metal cap (33, 53) to said ceramic substrate (32, 52); placing a solder plate (36, 56) on said flat plane of the top surface of said metal cap (33, 53) and the bottom surface of said semiconductor element (31, 51a-51c); placing a plate portion (35a, 55a)of a heatsink member on said solder plate (36, 56); and heating the assembling device to solder said plate portion (35a, 55a) to said metal cap (33, 53) and said semiconductor element (31, 51a-51c), whereby a hermetic sealing of the semiconductor element is completed.
Claim 23
Dependent Claim
50 words
A method according to claim 20, wherein said solder frame (34, 54) has a melting point higher than that of said solder plate (36, 56), and said heating step for said solder plate is carried out at a temperature higher than that of said heating step for said solder frame.
Claim 24
Dependent Claim
28 words
A method according to claim 21, wherein said solder frame (34, 54) is made of Au-Sn solder, and said solder plate (36, 56) is made of Pb-Sn solder.
Claim 25
Dependent Claim
46 words
A method according to claim 20, wherein said heatsink plate portion (35a, 55a) is made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy and AlSi alloy, and is coated with a metal layer for soldering.
Claim 26
Dependent Claim
50 words
A method according to claim 23, wherein said heatsink plate portion (35a, 55a) of aluminum nitride ceramic is coated with a metal lower layer formed by one of a sputtering method and a screen-printing method, and a metal upper layer is formed on the lower layer by a plating method.
Claim 27
Dependent Claim
45 words
A method according to claim 24, wherein said plating metal layer consists of a Ni plating layer having a thickness of 1.0 µm or more and an Au plating layer having a thickness of 0.2 to 1.0 µm and formed on the Ni plating layer.
Claim 28
Dependent Claim
37 words
A method according to claim 20, wherein said metal cap (33, 53) is made of an alloy selected from a group consisting of Fe-Ni-Co alloy and Fe-Ni alloy and is coated with a metal layer for soldering.
Claim 29
Dependent Claim
41 words
A method according to claim 26, wherein said metal cap (33, 53) is coated with a Ni plating layer having a thickness of 2.0 µm or more and then an Au plating layer having a thickness of 0.1 to 1.0 µm.
Claim 30
Dependent Claim
33 words
A method according to claim 20 further comprising, after said heating step for said solder plate, a step of bonding a heat dissipation fin portion to said heatsink plate portion with a resin.
Claim 31
Dependent Claim
31 words
A method according to claim 20, wherein said heatsink member consists of the plate portion (35a, 55a) and a heat dissipation fin portion (35b, 55b, 35c) fixed to said plate portion.
Claim 32
Dependent Claim
22 words
A method according to claim 29, wherein said fin portion (35c) is fixed to said plate portion (35a) with a solder (43).
Claim 33
Dependent Claim
25 words
A method according to claim 29, wherein said fin portion (35b, 55b) is fixed to said plate portion (35a, 55a) by a friction welding method.
Claim 34
Independent Claim
222 words
A method of assembling a semiconductor device (80) of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element (71) on a ceramic substrate (72) with a top face thereof facing downward and electrically connected to a wiring pattern layer (77) of the ceramic substrate; placing a solder frame (74) on said ceramic substrate (72) at a peripheral region of the substrate; placing a metal cap (73) having at least one through-hole (73c) corresponding to an external size of said semiconductor element (71), on said solder frame (74), to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap and the bottom surface of said semiconductor element (71); placing a solder plate (76) made of the same solder as that of said solder frame (74) on said flat plane of the top surface of said metal cap (73) and the bottom surface of said semiconductor element (71); placing a plate portion (75) of a heatsink member on said solder plate (76); and heating the assembling device to solder said metal cap (73) to said ceramic substrate (72) and to simultaneously solder said plate portion (75) to said metal cap (73) and said semiconductor element (71), whereby a hermetic sealing of the semiconductor element is completed.
Claim 35
Independent Claim
222 words
A method of assembling a semiconductor device (80) of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element (71) on a ceramic substrate (72) with a top face thereof facing downward and electrically connected to a wiring pattern layer (77) of the ceramic substrate; placing a solder frame (74) on said ceramic substrate (72) at a peripheral region of the substrate; placing a metal cap (73) having at least one through-hole (73c) corresponding to an external size of said semiconductor element (71), on said solder frame (74), to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap and the bottom surface of said semiconductor element (71); placing a solder plate (76) made of the same solder as that of said solder frame (74) on said flat plane of the top surface of said metal cap (73) and the bottom surface of said semiconductor element (71); placing a plate portion (75) of a heatsink member on said solder plate (76); and heating the assembling device to solder said metal cap (73) to said ceramic substrate (72) and to simultaneously solder said plate portion (75) to said metal cap (73) and said semiconductor element (71), whereby a hermetic sealing of the semiconductor element is completed.
Claim 36
Dependent Claim
45 words
A method according to claim 32, wherein said heatsink plate portion (75) is made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy, Cu, Al and Mo and is coated with metal layer for soldering.
Claim 37
Dependent Claim
51 words
A method according to claim 33, wherein said heatsink plate portion (75) of aluminum nitride ceramic is coated with a metal lower layer formed by one of a sputtering method and a screen-printing and baking method, and a metal upper layer is formed on the lower layer by a plating method.
Claim 38
Dependent Claim
45 words
A method according to claim 34, wherein said plating metal layer consists of a Ni plating layer having a thickness of 1.0 µm or more and an Au plating layer having a thickness of 0.2 to 1.0 µm and formed on the Ni plating layer.
Claim 39
Dependent Claim
36 words
A method according to claim 32, wherein said metal cap (73) is made of an alloy selected from a group consisting of Fe-Ni-Co alloy and Fe-Ni alloy and is coated with a metal layer for soldering.
Claim 40
Dependent Claim
39 words
A method according to claim 36, wherein said metal cap is coated with a Ni plating layer having a thickness of 2.0 µm or more and then an Au plating layer having a thickness of 0.1 to 1.0 µm.
Claim 41
Dependent Claim
34 words
A method according to claim 32 further comprising, after said heating step for said solder plate (76), a step of bonding a heat dissipation fin portion to said heatsink plate portion with a resin.
Claim 42
Dependent Claim
26 words
A method according to claim 32, wherein said heatsink member consists of the plate portion and a heat dissipation fin portion fixed to said plate portion.
Claim 43
Dependent Claim
19 words
A method according to claim 39, wherein said fin portion is fixed to said plate portion with a solder.
Claim 44
Dependent Claim
21 words
A method according to claim 39, wherein said fin portion is fixed to said plate portion by a friction welding method.
References Cited (Backward Citations)
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