EP0379359A2
Expired / Lapsed
EP
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A composite material
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-01-18
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Granted: —
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Expires: 2010-01-18
Abstract
Abstract A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600°C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.
Inventors
- 👤 Katsuhito C/O Itami Works Of Yoshida
- 👤 Kazuswo C/O Itami Works Of Tsuji
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 17:50
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B01; B01J; B01J3/00; B01J3/06; B01J3/062; C; C30; C30B; C30B29/00; C30B29/02; C30B29/04; C30B29/10; C30B29/38; C30B9/00; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/85; H10D62/854; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/36; B01J2203/00; B01J2203/06; B01J2203/0605; B01J2203/062; B01J2203/0645; B01J2203/065; B01J2203/0655; B01J2203/066; B01J2203/0675; B01J2203/068; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
44 words
A composite material comprising a single crystal diamond having electric insulation and single crystal cBN formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cBN has the same plane index on the substrate.
Claim 2
Dependent Claim
44 words
A composite material comprising a single crystal diamond having electric insulation and single crystal cBN formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cBN has the same plane index on the substrate.
Claim 3
Dependent Claim
20 words
A composite material as claimed in claim 1, wherein the single crystal diamond is that of the artificial Ib type.
Claim 4
Dependent Claim
20 words
A composite material as claimed in claim 1, wherein the single crystal diamond is that of the artificial IIa type.
Claim 5
Dependent Claim
26 words
A composite material as claimed in any one of claims 1 to 3, wherein the single crystal cBN is a semiconductor of the P-type or N-type.
Claim 6
Dependent Claim
22 words
A composite material as claimed in claim 4, wherein the semiconductor of the P-type is cBN doped with Be as an impurity.
Claim 7
Dependent Claim
27 words
A composite material as claimed in claim 4, wherein the semiconductor of the N-type is cBN doped with at least one of Si, S, Ge and Se.
Claim 8
Dependent Claim
41 words
A process for the production of the composite material as claimed in claim 1 by a high temperature and high pressure method, characterized in that oxygen is completely removed from the atmosphere in which cBN is formed on a diamond substrate.
Claim 9
Dependent Claim
25 words
A process as claimed in claim 7, wherein hBN and a solvent material, used as raw materials, are purified to decrease the oxygen content thereof.
Claim 10
Dependent Claim
29 words
A process as claimed in claim 7, wherein hBN and a solvent material, used as raw materials, contain at least one of Mg, Al, Ca, V, Ti and Zr.
Claim 11
Dependent Claim
37 words
A process for the production of the composite material as claimed in claim 1 by the CVD method, characterized in that oxygen is completely removed from the atmosphere in which cBN is formed on a diamond substrate.
References Cited (Backward Citations)
No citation records indexed.
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