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EP0379325A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Light emitting device

Assignee: Panasonic Holdings Corp
•
Filing: 1990-01-15
•
Granted: —
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Expires: 2010-01-15
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Abstract

Abstract A multi-tip field emission type electron source fabricated by arranging a multiplicity of micro-size tips (6) is opposedly disposed to a laser active substance (3) composed of an arbitrary semiconductor substance prepared on a conductive substrate (1), and the space (8) between the two is sealed in vacuum, and the laser oscillation is excited by the electron beams induced by the electric field applied between the two, thereby realizing a solid laser in a simple manner of fabrication. In particular, the invention relates to blue and ultraviolet laser devices using II-VI compound such as ZnSe, or SiC, which were difficult in the prior art.

Inventors

  • 👤 Tadashi Narusawa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-04 14:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S3/00; H01S3/09; H01S3/0955; H01S3/0959; H01S5/04

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 34 words
A light emitting device characterized by excitation by directly irradiating an active layer made of active substance such as semiconductor and other solid, with electron beams emitted from a field emission type electron source.
Claim 2
Dependent Claim 34 words
A light emitting device characterized by excitation by directly irradiating an active layer made of active substance such as semiconductor and other solid, with electron beams emitted from a field emission type electron source.
Claim 3
Dependent Claim 40 words
A light emitting device wherein an active layer and a multi-tip field emission type electron source are opposedly disposed, and the active layer is excited to emit light by electron beams emitted by the electric field applied between the two.
Claim 4
Dependent Claim 40 words
A light emitting device wherein an active layer and a multi-tip field emission type electron source are opposedly disposed, and the active layer is excited to emit light by electron beams emitted by the electric field applied between the two.
Claim 5
Dependent Claim 19 words
A light emitting device according to claim 1 or 2, wherein II-IV compound semiconductor is used as active layer.
Claim 6
Dependent Claim 21 words
A light emitting device according to claim 2, wherein the multi-tip field emission type electron source is formed by selective sputtering.
Claim 7
Dependent Claim 62 words
A light emitting device composed by opposedly disposing a first substrate on which an active layer is formed and a second substrate on which a field emission type electron source is formed, placing a low melting-point metal to intervene between the two substrates, evacuating the gap between the two substrates, heating in vacuum to melt the metal, and sealing the two substrates.
Claim 8
Dependent Claim 62 words
A light emitting device composed by opposedly disposing a first substrate on which an active layer is formed and a second substrate on which a field emission type electron source is formed, placing a low melting-point metal to intervene between the two substrates, evacuating the gap between the two substrates, heating in vacuum to melt the metal, and sealing the two substrates.

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