EP0377940A2
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EP
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Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
Assignee: Toshiba Corp
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Filing: 1989-09-29
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Granted: —
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Expires: 2009-09-29
Abstract
Abstract A compound semiconductor material includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.
Inventors
- 👤 Yasuo Intellectual Property Division Ohba
- 👤 Toshihide Intellectual Property Division Izumiya
- 👤 Ako Intellectual Property Division Hatano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 23:19
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H01S5/34; H01S5/343; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/018; H10H20/811; H10H20/812; H01S5/34333; Y; Y10; Y10S; Y10S148/00; Y10S148/065; Y10S148/113
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
29 words
A compound semiconductor material comprising a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type crystal structure.
Claim 2
Dependent Claim
29 words
A compound semiconductor material comprising a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type crystal structure.
Claim 3
Dependent Claim
25 words
A compound semiconductor element comprising a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure.
Claim 4
Dependent Claim
25 words
A compound semiconductor element comprising a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure.
Claim 5
Dependent Claim
45 words
A compound semiconductor element comprising a heterojunction consisting of BP layer (3) and Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer, said Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure.
Claim 6
Dependent Claim
45 words
A compound semiconductor element comprising a heterojunction consisting of BP layer (3) and Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer, said Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure.
Claim 7
Dependent Claim
46 words
A compound semiconductor element comprising a superlattice layer consisting of BP layer (3) and Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer, said Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure.
Claim 8
Dependent Claim
46 words
A compound semiconductor element comprising a superlattice layer consisting of BP layer (3) and Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer, said Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure.
Claim 9
Dependent Claim
34 words
A compound semiconductor element comprising a Ga x Aℓ y B 1-x-y N z P 1-z (wherein 0 ≦ x, y, z ≦ 1) mixed crystal layer having a zinc blend type crystal structure.
Claim 10
Dependent Claim
34 words
A compound semiconductor element comprising a Ga x Aℓ y B 1-x-y N z P 1-z (wherein 0 ≦ x, y, z ≦ 1) mixed crystal layer having a zinc blend type crystal structure.
Claim 11
Dependent Claim
17 words
An element according to claim 5, characterized in that said element satisfies x + y ≃ z.
Claim 12
Dependent Claim
60 words
A compound semiconductor element comprising a superlattice layer or mixed crystal layer consisting of Ga a Aℓ 1-a N and BP whose average composition formula is represented by Ga x Aℓ y B 1-x-y N z P 1-z and whose composition satisfies x + y ≃ z and z ≦ 0.8, said layer having a zinc blend type crystal structure.
Claim 13
Dependent Claim
60 words
A compound semiconductor element comprising a superlattice layer or mixed crystal layer consisting of Ga a Aℓ 1-a N and BP whose average composition formula is represented by Ga x Aℓ y B 1-x-y N z P 1-z and whose composition satisfies x + y ≃ z and z ≦ 0.8, said layer having a zinc blend type crystal structure.
Claim 14
Dependent Claim
67 words
An element according to claim 7, characterized in that said superlattice layer or mixed crystal layer is formed on a substrate through a buffer layer consisting of a BP layer (3) or a multilayer structure obtained by alternately stacking superlattice layers consisting of Ga a Aℓ 1-a N and BP whose average composition is changed and Ga x Aℓ y B 1-x-y N z P 1-z .
Claim 15
Dependent Claim
31 words
An element according to any one of claims 4, 5, and 7, characterized in that said superlattice layer or mixed crystal layer is formed on a GaP, Sic, or Si substrate.
Claim 16
Independent Claim
68 words
A method of manufacturing a compound semiconductor element, comprising the step of sequentially forming a BP layer (3) and a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer on a substrate (1) so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate (1) between the plurality of reaction regions.
Claim 17
Independent Claim
68 words
A method of manufacturing a compound semiconductor element, comprising the step of sequentially forming a BP layer (3) and a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer on a substrate (1) so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate (1) between the plurality of reaction regions.
Claim 18
Dependent Claim
46 words
A compound semiconductor element comprising Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type, and Ga x Aℓ 1-x N (0 ≦ x ≦ 1) containing B and P and having a Worzeite type.
Claim 19
Dependent Claim
46 words
A compound semiconductor element comprising Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type, and Ga x Aℓ 1-x N (0 ≦ x ≦ 1) containing B and P and having a Worzeite type.
Claim 20
Dependent Claim
25 words
A compound semiconductor element comprising Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a Worzeite type.
Claim 21
Dependent Claim
25 words
A compound semiconductor element comprising Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a Worzeite type.
References Cited (Backward Citations)
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