EP0372820A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconducteur device having high energy sustaining capability and a temperature compensated sustaining voltage
Assignee: Motorola Solutions Inc
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Filing: 1989-11-29
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Granted: —
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Expires: 2009-11-29
Abstract
Abstract A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes 28 and 71 between the drain 22 and the gate 20 of the semiconductor device. The diodes 28 protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes 28 and 71 are formed back-to-back in polysilicon 65. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.
Inventors
- 👤 John Park Phipps
- 👤 Judith Lynn Sutor
- 👤 Stephen Paul Robb
- 👤 Lewis Eugene Terry
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 01:14
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D84/101; H10D84/141; H10D84/148; H10D88/00; H10D88/01; H10D89/00; H10D89/60; H10D89/601; H10D89/611
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
47 words
A monolithic temperature compensated voltage reference device, comprising: a semiconductor substrate; an insulating layer disposed on the substrate; a polysilicon layer disposed on the insulating layer; and a plurality of diodes formed back-to-back in the polysilicon layer wherein the plurality of diodes provide a temperature compensated voltage.
Claim 2
Dependent Claim
47 words
A monolithic temperature compensated voltage reference device, comprising: a semiconductor substrate; an insulating layer disposed on the substrate; a polysilicon layer disposed on the insulating layer; and a plurality of diodes formed back-to-back in the polysilicon layer wherein the plurality of diodes provide a temperature compensated voltage.
Claim 3
Dependent Claim
24 words
The device of claim 1 further comprising: means for making electrical contact to a first and a last junction of the plurality of diodes.
Claim 4
Dependent Claim
22 words
The device of claim 1 further comprising: the plurality of diodes having extra forward biased diodes to achieve a desired temperature coefficient.
Claim 5
Dependent Claim
22 words
The device of claim 1 further comprising: the plurality of diodes having extra reverse biased diodes to achieve a desired temperature coefficient.
Claim 6
Dependent Claim
73 words
The device of claim 1 further comprising: a semiconductor device integrated with the temperature compensated voltage reference device, wherein the semiconductor device has a gate region, a source region, and a drain region, and wherein the monolithic temperature compensated voltage reference device makes electrical contact with the gate region and the drain region to provide protection to the semiconductor device from avalanche stress-induced failure and to provide for a temperature compensated sustaining voltage.
Claim 7
Dependent Claim
13 words
The device of claim 5 wherein the semiconductor device is a power MOSFET.
Claim 8
Dependent Claim
73 words
The device of claim 1 further comprising: a semiconductor device integrated with the temperature compensated voltage reference device, wherein the semiconductor device has a base region, an emitter region, and a collector region, and wherein the monolithic temperature compensated voltage reference device makes electrical contact with the base region and the collector region to provide protection to the semiconductor device from avalanche stress-induced failure and to provide for a temperature compensated sustaining voltage.
Claim 9
Dependent Claim
23 words
The device of claim 7 wherein the semiconductor device is a bipolar transistor, an insulated gate bipolar transistor, a thyristor, or the like.
Claim 10
Dependent Claim
81 words
A rugged power MOSFET having high energy protection and a temperature compensated sustaining voltage, comprising: a semiconductor substrate having a polysilicon gate region, a source region, and a drain region thereon; and a plurality of temperature compensated voltage polysilicon diodes formed back-to-back adjacent a polysilicon gate pad region, and wherein the plurality of diodes make electrical contact to the polysilicon gate region and to the drain region to provide for high energy protection to the semiconductor device from avalanche stem-induced failure.
Claim 11
Dependent Claim
81 words
A rugged power MOSFET having high energy protection and a temperature compensated sustaining voltage, comprising: a semiconductor substrate having a polysilicon gate region, a source region, and a drain region thereon; and a plurality of temperature compensated voltage polysilicon diodes formed back-to-back adjacent a polysilicon gate pad region, and wherein the plurality of diodes make electrical contact to the polysilicon gate region and to the drain region to provide for high energy protection to the semiconductor device from avalanche stem-induced failure.
Claim 12
Dependent Claim
86 words
A monolithic integrated solid state device having temperature compensated fly-back overvoltage protection, comprising: a semiconductor substrate in which the solid state device is made and wherein the solid state device has a control electrode and at least one current carrying electrode; a series of back-to-back diodes formed in a polysilicon layer over the semiconductor substrate; and electrical connection means connecting one end of the series of diodes to the control electrode and connecting the other end of the series of diodes to the current carrying electrode.
Claim 13
Dependent Claim
86 words
A monolithic integrated solid state device having temperature compensated fly-back overvoltage protection, comprising: a semiconductor substrate in which the solid state device is made and wherein the solid state device has a control electrode and at least one current carrying electrode; a series of back-to-back diodes formed in a polysilicon layer over the semiconductor substrate; and electrical connection means connecting one end of the series of diodes to the control electrode and connecting the other end of the series of diodes to the current carrying electrode.
References Cited (Backward Citations)
No citation records indexed.
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