EP0371796A2
Expired / Lapsed
EP
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Apparatus and process for chemical vapor deposition
Assignee: Fujitsu Ltd
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Filing: 1989-11-30
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Granted: —
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Expires: 2009-11-30
Abstract
Abstract An apparatus for a chemical vapour deposition of a compound film on a substrate, comprising a plurality of gas-generating chambers (7a-7d) each containing an evaporating boat (2a-2d) for a solid source containing a component element of a compound film to be formed on a substrate, provided with a heating element (3a-3d) for heating and evaporating the solid source, having an inlet (4a-4d) for a carrier gas, and a gas outlet. The chambers (7a-7d) are arranged such that effective gas-generating portions (G) thereof are thermally isolated from each other. A gas-mixing chamber (M) for mixing gases from the gas-generating chamber is provided with heater element (3e) for heating a gas passing therethrough and has inlets for gases flowing from the gas-generating chambers and an outlet for a gas mixture. A film-growing chamber (F) for containing a substrate (5) on which a compound film to be formed by a gas phase reaction, is provided with a heating element (3e) for heating substrate, and has an inlet for a gas mixture flowing from the gas-mixing chamber and an exhaust gas outlet. Also disclosed is a chemical vapour deposition process using the disclosed apparatus.
Inventors
- 👤 Takafumi Kimura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/408; C23C16/44; C23C16/448; C23C16/4481
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
185 words
Apparatus for chemical vapour deposition of a compound film on a substrate the apparatus comprising a plurality of gas-generating chambers (110-110d) each containing an evaporating boat (2a-2d) for a solid source containing a component element of a compound film to be formed on a substrate, a heating element (3a-3d) for heating and evaporating the solid source, an inlet (4a-4d) for a carrier gas for carrying a gas evaporated from the solid source, and a gas outlet (7a-7d), wherein effective gas-generating portions (G) of the chambers are thermally isolated from each other; a gas-mixing chamber (M) for mixing gases from the gas-generating chambers (110a-110d), provided with a heater element (3e) for heating a gas passing therethrough and having inlets for gases flowing from the gas-generating chambers and an outlet for a gas mixture; and a film-growing chamber (F) for containing a substrate (5) on which a compound film is to be formed by a vapour phase reaction, the chamber including a heating element (3e) for heating the substrate, and having an inlet for a gas mixture flowing from the gas-mixing chamber and an exhaust gas outlet.
Claim 2
Dependent Claim
185 words
Apparatus for chemical vapour deposition of a compound film on a substrate the apparatus comprising a plurality of gas-generating chambers (110-110d) each containing an evaporating boat (2a-2d) for a solid source containing a component element of a compound film to be formed on a substrate, a heating element (3a-3d) for heating and evaporating the solid source, an inlet (4a-4d) for a carrier gas for carrying a gas evaporated from the solid source, and a gas outlet (7a-7d), wherein effective gas-generating portions (G) of the chambers are thermally isolated from each other; a gas-mixing chamber (M) for mixing gases from the gas-generating chambers (110a-110d), provided with a heater element (3e) for heating a gas passing therethrough and having inlets for gases flowing from the gas-generating chambers and an outlet for a gas mixture; and a film-growing chamber (F) for containing a substrate (5) on which a compound film is to be formed by a vapour phase reaction, the chamber including a heating element (3e) for heating the substrate, and having an inlet for a gas mixture flowing from the gas-mixing chamber and an exhaust gas outlet.
Claim 3
Dependent Claim
30 words
Apparatus according to claim 1, wherein each of the plurality of gas-generating chambers (110a-110d) has a removable cap (20a-20d) in which an opening is formed as the carrier gas inlet.
Claim 4
Dependent Claim
23 words
Apparatus according to claim 1 or claim 2, wherein the plurality of gas-generating chambers (110a-110d) are arranged radially around the gas-mixing chamber (M).
Claim 5
Dependent Claim
41 words
Apparatus according to claim 1 or claim 2, wherein the plurality of gas generating chambers (110a-110d) are arranged in parallel with each other and the gas-mixing chamber (M) has a converged outlet communicating with the inlet of the film-growing chamber (F).
Claim 6
Dependent Claim
74 words
Apparatus according to any of the preceding claims, wherein the apparatus is substantially an integral unit which comprises an outer gastight casing (110) accommodating an inner gastight shell (101) and has a first portion serving as the gas-generating chambers (7a-7d), a second portion serving as the gas-mixing chamber (M), and a third portion serving as the film-growing chamber (F), the inner shell (101) forming continued inner walls of the gas-generating chambers and gas-mixing chamber.
Claim 7
Dependent Claim
24 words
Apparatus according to claim 5, wherein the heater element (3a-3e) of the gas-generating, gas-mixing, and film-growing chambers are disposed outside the outer casing (110).
Claim 8
Dependent Claim
48 words
Apparatus according to claim 5, wherein the heater elements (3a-3e) of the gas-generating (G) and gas-mixing (M) chambers are disposed between the outer gastight casing (110) and the inner gastight shell (101) and the heater element (3f) of the film-growing chamber (F) is disposed in a substrate holder.
Claim 9
Dependent Claim
32 words
Apparatus according to any of claims 5 to 7, wherein the outer gastight casing (110) is made of a metal and the inner gastight shell (101) is made of a refractory material.
Claim 10
Dependent Claim
18 words
Apparatus according to claim 8, wherein the metal is a stainless steel and the refractory material is quartz.
Claim 11
Dependent Claim
18 words
Apparatus according to any of the preceding claims, wherein the compound film is formed of an oxide superconductor.
Claim 12
Dependent Claim
16 words
Apparatus according to claim 10, wherein the oxide superconductor is formed of a Bi-Sr-Ca-Cu-O oxide superconductor.
Claim 13
Dependent Claim
121 words
A process for a chemical vapour deposition of a compound film on a substrate, comprising the steps of generating gases of component elements of a compound film to be formed on a substrate by evaporating solid sources, which respectively contain the component elements, in gas-generating chambers (7a-7d) arranged corresponding to the component elements and such that effective gas-generating portions thereof are thermally isolated from each other; introducing the thus generating gases into a gas-mixing chamber (M); mixing the gases in the gas-mixing chamber (M) to form a gas mixture; introducing the gas mixture into a film-growing chamber (F) to feed the mixture onto a substrate placed therein; and effecting a vapour phase reaction to form a compound film on the substrate.
Claim 14
Dependent Claim
121 words
A process for a chemical vapour deposition of a compound film on a substrate, comprising the steps of generating gases of component elements of a compound film to be formed on a substrate by evaporating solid sources, which respectively contain the component elements, in gas-generating chambers (7a-7d) arranged corresponding to the component elements and such that effective gas-generating portions thereof are thermally isolated from each other; introducing the thus generating gases into a gas-mixing chamber (M); mixing the gases in the gas-mixing chamber (M) to form a gas mixture; introducing the gas mixture into a film-growing chamber (F) to feed the mixture onto a substrate placed therein; and effecting a vapour phase reaction to form a compound film on the substrate.
References Cited (Backward Citations)
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