Patent US433260A successfully refreshed from Google Patents.
EP0366208A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for bonding silicon wafers together, for manufacturing semiconductor devices
Assignee: STMicroelectronics SRL
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Filing: 1989-10-26
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Granted: —
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Expires: 2009-10-26
Abstract
Abstract After having polished the surfaces of the wafers to be bonded, decontaminated them and placed them together with their polished surfaces in close contact, and before the usual nitrogen thermal bonding treatment, they are placed in a vacuum chamber in which a sufficient degree of vacuum is obtained to completely remove any air remaining between the pairs of surfaces to be bonded.
Inventors
- 👤 Cesare Ronsisvalle
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 04:18
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
123 words
Method for bonding silicon wafers together, for manufacturing semiconductor devices, comprising the following consecutive steps : a) specular polishing of the surfaces of the wafers to be bonded; b) decontamination of the polished wafers; c) positioning of the wafers in a clean atmosphere with their polished surfaces in close contact with one another; d) nitrogen thermal bonding; characterized by the fact that between the aforesaid steps c) and d) the following further steps are carried out: - placing the wafers to be bonded in a vacuum chamber and creating a sufficient level of vacuum L to completely remove any traces of air remaining between the pairs of surfaces to be bonded; - subsequently returning the pressure on the wafers to its initial value.
Claim 2
Dependent Claim
123 words
Method for bonding silicon wafers together, for manufacturing semiconductor devices, comprising the following consecutive steps : a) specular polishing of the surfaces of the wafers to be bonded; b) decontamination of the polished wafers; c) positioning of the wafers in a clean atmosphere with their polished surfaces in close contact with one another; d) nitrogen thermal bonding; characterized by the fact that between the aforesaid steps c) and d) the following further steps are carried out: - placing the wafers to be bonded in a vacuum chamber and creating a sufficient level of vacuum L to completely remove any traces of air remaining between the pairs of surfaces to be bonded; - subsequently returning the pressure on the wafers to its initial value.
Claim 3
Dependent Claim
27 words
Bonding method as claimed in Claim 1, characterized by the fact that the pressure P relative to the aforesaid level of vacuum is lower than 10-7 torr.
References Cited (Backward Citations)
No citation records indexed.
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