EP0366116A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Thin film transistor panel and manufacturing method thereof
Assignee: Casio Computer Co Ltd
•
Filing: 1989-10-25
•
Granted: —
•
Expires: 2009-10-25
Abstract
Abstract A thin film transistor panel has a substrate on which a plurality of electrode lines are aligned in a matrix form, thin film transistors (T3) which are formed on crossing portions of the plurality of the electrode lines, a diffusible insulating film (38) for covering said thin film transistors (T3), and metal-diffused layers (38a) connected to source electrodes. The metal-diffused layers are formed by diffusing a metal into predetermined areas of said insulating film (38). If the metal-diffused layers (38a) are used as the pixel electrodes, high density display can be obtained due to the fine pixel electrodes. In addition, a manufacturing method of thin film transistor panel having the steps of forming gate electrodes (32) on a substrate (31), forming gate insulating films (33) on the gate electrodes (32), forming semiconductor layers (34) on said gate insulating films (33), forming source and drain electrodes (36, 37) on said semiconductor layers (34) except for channel portions, forming a diffusible insulating film (38) which covers the whole surface of the substrate (31), providing contact holes (39) in said diffusible insulating film (38) corresponding to said source electrodes (36), and forming metal-diffused layers (38a) by diffusing a metal into the diffusible insulating film (38) and inner surfaces of said contact holes (39). The metal-diffused layers (38a) can be formed in high pattern accuracy, and the fine pixel electrodes can be easily obtained if the metal-diffused layers (38a) are used as the pixel electrodes.
Inventors
- 👤 Makoto Pat. Dep. Dev. Div. Hamura R&D Sasaki
- 👤 Syunichi Pat. Dep. Dev. Div. Hamura R&D Sato
- 👤 Hisatoshi Pat. Dep. Dev. Div. Hamura R&D Mori
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 14:21
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136227; H; H10; H10D; H10D86/00; G02F1/1333; G02F1/1343; G02F1/13439
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
96 words
A thin film transistor panel comprising: a substrate; a plurality of electrode lines which are formed on said substrate in a matrix form; and thin film transistors which are formed at crossing portions of the plurality said electrode lines and each has at least a gate electrode, a source electrode and a drain electrode, said thin film transistor panel characterized by further comprising: a metal diffusible insulating film (38); and metal-diffused layers (38a) which are formed by diffusing a metal into predetermined areas of said insulating film (38) and connected to said source electrodes (36) electrically.
Claim 2
Dependent Claim
96 words
A thin film transistor panel comprising: a substrate; a plurality of electrode lines which are formed on said substrate in a matrix form; and thin film transistors which are formed at crossing portions of the plurality said electrode lines and each has at least a gate electrode, a source electrode and a drain electrode, said thin film transistor panel characterized by further comprising: a metal diffusible insulating film (38); and metal-diffused layers (38a) which are formed by diffusing a metal into predetermined areas of said insulating film (38) and connected to said source electrodes (36) electrically.
Claim 3
Dependent Claim
22 words
A thin film transistor panel according to claim 1, characterized in that said insulating film (38) covers said thin film transistors (T3).
Claim 4
Dependent Claim
20 words
A thin film transistor panel according to claim 1, characterized in that said insulating film (38) has contact holes (39).
Claim 5
Dependent Claim
22 words
A thin film transistor panel according to claim 3, characterized in that said contact holes (39) correspond to said source electrodes (36).
Claim 6
Dependent Claim
28 words
A thin film transistor panel according to claim 3, characterized in that said source electrodes (36) and said diffused areas (38a) are connected through said contact holes (39).
Claim 7
Dependent Claim
22 words
A thin film transistor panel according to claim 3, characterized in that said contact holes (39) are bottomed holes or through holes.
Claim 8
Dependent Claim
24 words
A thin film transistor panel according to claim 1, characterized in that said source electrodes (36) and said metal-diffused layers (38a) are directly connected.
Claim 9
Dependent Claim
18 words
A thin film transistor panel according to claim 1, characterized in that said metal-diffused layers (38a) are conductive.
Claim 10
Dependent Claim
20 words
A thin film transistor panel according to claim 1, characterized in that said metal-diffused layers (38a) are pixel electrodes (41).
Claim 11
Dependent Claim
26 words
A thin film transistor panel according to claim 1, characterized in that said substrate (31), said insulating film (38) and said metal-diffused layers (38a) are transparent.
Claim 12
Dependent Claim
21 words
A thin film transistor panel according to claim 1, characterized in that said insulating film (38) is made of SOG film.
Claim 13
Dependent Claim
41 words
A thin film transistor panel according to claim 1, characterized in that said insulating film (38) is formed on a surface on which at least one of said gate electrodes (G), said source electrodes (S) and drain electrodes (D) are formed.
Claim 14
Dependent Claim
24 words
A thin film transistor panel according to claim 1, characterized in that said insulating film (112) is formed under said thin film transistors (T11).
Claim 15
Dependent Claim
153 words
A thin film transistor panel comprising: a substrate; a plurality of electrode lines which are formed on said substrate in a matrix form; and thin film transistors which are formed at crossing portions of the plurality said electrode lines and each has at least a gate electrode, a source electrode and a drain electrode, said thin film transistor panel characterized by further comprising: a metal diffusible insulating film (205) for covering said thin film transistor; contact holes (206) which are provided in said insulating film (205) material; metal-diffused layers (205a) which are formed on the inner surfaces of said contact holes (206) and the surface of said insulating film (205) in the periphery of said contact holes (206); wirings (209) formed overlappedly on said metal-diffused layers (205a) in the periphery of said contact holes (206); and connecting means for connecting said wirings (209) to source electrodes (S) of said thin film transistors (T20).
Claim 16
Dependent Claim
153 words
A thin film transistor panel comprising: a substrate; a plurality of electrode lines which are formed on said substrate in a matrix form; and thin film transistors which are formed at crossing portions of the plurality said electrode lines and each has at least a gate electrode, a source electrode and a drain electrode, said thin film transistor panel characterized by further comprising: a metal diffusible insulating film (205) for covering said thin film transistor; contact holes (206) which are provided in said insulating film (205) material; metal-diffused layers (205a) which are formed on the inner surfaces of said contact holes (206) and the surface of said insulating film (205) in the periphery of said contact holes (206); wirings (209) formed overlappedly on said metal-diffused layers (205a) in the periphery of said contact holes (206); and connecting means for connecting said wirings (209) to source electrodes (S) of said thin film transistors (T20).
Claim 17
Dependent Claim
19 words
A thin film transistor panel according to claim 14, characterized in that said connecting means is made of metal.
Claim 18
Dependent Claim
24 words
A thin film transistor panel according to claim 14, characterized in that said connecting means consists of the same metal as said wirings (209).
Claim 19
Dependent Claim
40 words
A thin film transistor panel according to claim 14, characterized in that said contact holes (209) are formed so as to correspond to two electrode among said gates (G), source and drain electrodes (S, D) of said thin film transistors.
Claim 20
Dependent Claim
133 words
A thin film transistor panel display device comprising: a substrate; a plurality of electrode lines which are formed on said substrate in a matrix form; thin film transistors which are formed at each crossing portion of the plurality of said electrode lines and each has at least a gate electrode, a source electrode and a drain electrode, an opposite substrate for opposing said substrate; opposite electrode which is formed on said opposite substrate; and a liquid crystal which is injected between said opposite substrate and said substrate, said thin film transistor panel display device characterized by comprising: a diffusible insulating film which covers said thin film transistor (T3); and metal-diffused layers (38a) which are formed by diffusing a metal into said insulating film (38) and connected directly to said source electrode (S) electrically.
Claim 21
Dependent Claim
133 words
A thin film transistor panel display device comprising: a substrate; a plurality of electrode lines which are formed on said substrate in a matrix form; thin film transistors which are formed at each crossing portion of the plurality of said electrode lines and each has at least a gate electrode, a source electrode and a drain electrode, an opposite substrate for opposing said substrate; opposite electrode which is formed on said opposite substrate; and a liquid crystal which is injected between said opposite substrate and said substrate, said thin film transistor panel display device characterized by comprising: a diffusible insulating film which covers said thin film transistor (T3); and metal-diffused layers (38a) which are formed by diffusing a metal into said insulating film (38) and connected directly to said source electrode (S) electrically.
Claim 22
Dependent Claim
20 words
A thin film transistor panel display device according to claim 18, characterized in that said metal-diffused layers (38a) are conductive.
Claim 23
Dependent Claim
21 words
A thin film transistor panel display device according to claim 18, characterized in that said metal-diffused layers (38a) are pixel electrodes.
Claim 24
Dependent Claim
37 words
A thin film transistor panel display device according to claim 18, characterized in that said substrate (191), said insulating film (38), said metal-diffused layers (38a), said opposite substrate (198) and said opposite electrode (197) are all transparent.
Claim 25
Dependent Claim
161 words
A manufacturing method of thin film transistor panel in which a plurality of electrode lines are formed on a substrate in a matrix form and thin film transistors are formed at crossing portions of the plurality of said electrode lines, characterized by comprising the steps of: forming gate electrodes (32) on a substrate; forming a gate insulating film (33) on the whole surface of said substrate (31) including said gate electrodes (32); forming semiconductor layers (34) on said gate insulating film in locations opposite to said gate electrodes (32); forming source and drain electrodes (36, 37) on said semiconductor layers (34) except for channel portions; forming a diffusible insulating film (38) which covers said substrate (31); providing contact holes (39) in said diffusible insulating film correspondingly to said source electrodes; forming a conductive metal layer (42) on said diffusible insulating film (38); diffusing said conductive metal layer (42) into said diffusible insulating film (38); and removing said conductive metal layer (42).
Claim 26
Dependent Claim
161 words
A manufacturing method of thin film transistor panel in which a plurality of electrode lines are formed on a substrate in a matrix form and thin film transistors are formed at crossing portions of the plurality of said electrode lines, characterized by comprising the steps of: forming gate electrodes (32) on a substrate; forming a gate insulating film (33) on the whole surface of said substrate (31) including said gate electrodes (32); forming semiconductor layers (34) on said gate insulating film in locations opposite to said gate electrodes (32); forming source and drain electrodes (36, 37) on said semiconductor layers (34) except for channel portions; forming a diffusible insulating film (38) which covers said substrate (31); providing contact holes (39) in said diffusible insulating film correspondingly to said source electrodes; forming a conductive metal layer (42) on said diffusible insulating film (38); diffusing said conductive metal layer (42) into said diffusible insulating film (38); and removing said conductive metal layer (42).
Claim 27
Dependent Claim
35 words
A manufacturing method of thin film transistor panel according to claim 22, characterized in that said metal-diffused layer forming step comprises performing heat diffusing of said conductive metal layer into said diffusibel insulating film (38).
Claim 28
Dependent Claim
33 words
A manufacturing method of thin film transistor panel according to claim 22, characterized in that said diffusing step comprises heating said conductive metal layer (42) at almost 300°C for one to two hours.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.