EP0365854A2
Expired / Lapsed
EP
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Semiconductor device having a multi-layered wiring structure
Assignee: Toshiba Corp
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Filing: 1989-09-27
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Granted: —
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Expires: 2009-09-27
Abstract
Abstract A semiconductor device has a multi-layered wiring structure. This semiconductor device has an interlayer insulating film comprising a first insulating film (4) for protecting a first metal wiring layer (3a), a second insulating film (5) deposited on the first insulating film (4) by a substrate-bias applying method to flatten the interlayer insulating film and a third insulating film (6) deposited on the second insulating film (5) to improve the productivity by the same method as used to form the first insulating film (4).
Inventors
- 👤 Toshihiko Katsura
- 👤 Masahiro Abe
- 👤 Yasukazu Mase
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 01:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/45; H10W20/48; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10W20/47
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
91 words
A semiconductor device comprising: a semiconductor substrate (1); an oxide film (2) formed on said substrate (1); a first metal wiring layer (3a) formed on said oxide film (2); a first insulating film (4), formed on said first metal wiring layer (3a), for protection thereof; a second insulating film (5) formed on said first insulating film (4) while applying a bias to said substrate (1); a third insulating film (6) formed on said second insulating film (5); and a second metal wiring layer (7) formed on said second insulating film (5).
Claim 2
Dependent Claim
91 words
A semiconductor device comprising: a semiconductor substrate (1); an oxide film (2) formed on said substrate (1); a first metal wiring layer (3a) formed on said oxide film (2); a first insulating film (4), formed on said first metal wiring layer (3a), for protection thereof; a second insulating film (5) formed on said first insulating film (4) while applying a bias to said substrate (1); a third insulating film (6) formed on said second insulating film (5); and a second metal wiring layer (7) formed on said second insulating film (5).
Claim 3
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first metal wiring layer (3a) is an aluminum layer or an aluminum alloy layer.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first insulating film (4) is an SiO₂ film formed by a plasma CVD method.
Claim 5
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first insulating film (4) is an SiON film formed by a plasma CVD method.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first insulating film (4) is an Si₃N₄ film formed by a plasma CVD method.
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first insulating film (4) is a PSG film formed by a plasma CVD method.
Claim 8
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first insulating film (4) is an LTO film formed by a plasma CVD method.
Claim 9
Dependent Claim
25 words
A semiconductor device according to claim 1, characterized in that said first insulating film (4) is a spin-on-glass film formed by a plasma CVD method.
Claim 10
Dependent Claim
18 words
A semiconductor device according to claim 1, characterized in that said second insulating film (5) is an SiO₂.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 1, characterized in that said third insulating film (6) is an SiO₂.
References Cited (Backward Citations)
No citation records indexed.
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