EP0365312A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device and signal processing device having said device provided therein
Assignee: Canon Inc
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Filing: 1989-10-18
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Granted: —
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Expires: 2009-10-18
Abstract
Abstract A semiconductor device (Fig.3) having a plurality of charge accumulation type sensor elements (1005) and electroconductive members (1002) capacitively coupled to said sensor elements (1005) through insulating members (1003) commonly, and by the constitution of the semiconductor element which outputs a signal voltage corresponding to the average value of the respective voltages accumulated in the above plurality of sensor elements (1005), the time for idle read can be obviated to make the read speed higher. The electroconductive members (1002) and the insulating members (1003) may be incorporated as respective common layers.
Inventors
- 👤 Katsuhiko Yamada
- 👤 Shigetoshi Sugawa
- 👤 Hidemasa Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:46
CPC Classifications
H; H04; H04N; H04N1/00; H04N1/024; H04N1/028; H04N1/02805; H04N25/00; H04N25/70; H04N25/76; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
53 words
A semiconductor device having a plurality of charge accumulation type sensor elements and electroconductive members capacitively coupled, commonly through insulating members to each of said plurality of sensor elements, wherein said semiconductor device outputs a signal voltage corresponding to the average value of the respective voltages accumulated in said plurality of sensor elements.
Claim 2
Dependent Claim
53 words
A semiconductor device having a plurality of charge accumulation type sensor elements and electroconductive members capacitively coupled, commonly through insulating members to each of said plurality of sensor elements, wherein said semiconductor device outputs a signal voltage corresponding to the average value of the respective voltages accumulated in said plurality of sensor elements.
Claim 3
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor element comprises a photoelectric converting section and a switch element section.
Claim 4
Dependent Claim
43 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor element comprises a photoelectric converting section, a switch for transferring the signal charges photoelectrically converted and a switch element for reset for resetting the potential at said photoelectric converting section.
Claim 5
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor element comprises a photovoltaic element section.
Claim 6
Dependent Claim
14 words
A semiconductor device according to claim 4, wherein said photovoltaic section is a diode.
Claim 7
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor element comprises a photoconductive element section and a charge accumulation section.
Claim 8
Dependent Claim
23 words
A semiconductor device according to claim 1, wherein said insulating member comprises a material selected from silicon oxide, silicon nitride, silicon oxide nitride.
Claim 9
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said insulating member comprises a material selected from PSG, BSG.
Claim 10
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein said electroconductive member comprises a material selected from Al, Cr, Ni, Cu, Au, Ag, Pt, W.
Claim 11
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein said electroconductive member comprises a material selected from SnO₂ and ITO.
Claim 12
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor device has an active region comprising a semiconductor material having Si, Ge, Se, etc. as the main constituent.
Claim 13
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor device has an active region comprising a semiconductor material having SiC, SiGe, etc. as the main constituent.
Claim 14
Dependent Claim
29 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor device has an active region comprising a semiconductor material having GaAs, etc. as the main constituent.
Claim 15
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor device has an active region comprising a non-crystalline semiconductor material having Si, Ge, Se, etc. as the main constituent.
Claim 16
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor device has an active region comprising a non-single crystalline semiconductor material having SiC,SiGe, etc. as the main constituent.
Claim 17
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein said charge accumulation type sensor element has an active region comprising a ultra-lattice structure.
Claim 18
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said semiconductor device is a line sensor device.
Claim 19
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said semiconductor device is an area sensor device.
Claim 20
Dependent Claim
73 words
A signal processing device comprising: a semiconductor device having a plurality of charge accumulation type sensor elements and electroconductive members capacitively coupled commonly through insulating members to each of said plurality of sensor elements; a driving means for reading the signal from said sensor element; a reading means for reading the output signal from said electroconductive members, said reading means feedbacking the output signal outputted from said electroconductive members to said driving means.
Claim 21
Dependent Claim
73 words
A signal processing device comprising: a semiconductor device having a plurality of charge accumulation type sensor elements and electroconductive members capacitively coupled commonly through insulating members to each of said plurality of sensor elements; a driving means for reading the signal from said sensor element; a reading means for reading the output signal from said electroconductive members, said reading means feedbacking the output signal outputted from said electroconductive members to said driving means.
Claim 22
Dependent Claim
21 words
A signal processing device according to claim 19, wherein said signal processing device is a scanner device for reading of image.
Claim 23
Dependent Claim
17 words
A signal processing device according to claim 19, wherein said signal processing device is a facsimile device.
Claim 24
Dependent Claim
16 words
A signal processing device according to claim 19, wherein said signal processing device is a camera.
Claim 25
Dependent Claim
25 words
A semiconductor device as claimed in any one of the preceding claims 1 to 18, wherein said electroconductive members are incorporated as a common layer.
Claim 26
Dependent Claim
18 words
A semiconductor device as claimed in claim 23, wherein said insulating members are incorporated as a common layer.
Claim 27
Dependent Claim
25 words
A signal processing device as claimed in any of the preceding claims 19 to 22, wherein said electroconductive members are incorporated as a common layer.
Claim 28
Dependent Claim
19 words
A signal processing device as claimed in claim 25, wherein said insulating members are incorporated as a common layer.
References Cited (Backward Citations)
No citation records indexed.
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