Fabrication method of semiconductor devices and transparent mask for charged particle beam

Claim 2

In a charged particle beam exposure apparatus comprising means (21-23) for generating a charged particle beam (20), deflection means (24) for deflecting said charged particle beam (20) electromagnetically and illuminating one small par­tition (28) of a plurality of small partitions (28) that con­stitute one aggregate (27) partition of a plurality of aggregate partitions (27) formed on a transparent mask (26), mask movement means (9a, 9b) for moving said transparent mask (26) mechanically, and reduction-exposure means (30-34) for reducing the charged particle beam patterned through said mask (26) and for exposing the same on a semiconductor device (35) to be exposed, a method of fabricating a semiconductor device comprising the steps of: moving one aggregate partition (27) of said plurality of aggregate partitions (27) into a predetermined position by said mask movement means (9a, 9b); selecting one small partition (28) from among said plurality of small partitions (28) of said moved aggregate partition (27) by said deflection means (24); and reducing said selected small partition (28) and exposing the same on said semiconductor device (35) by said reduct­ion-exposure means (30-34).

Claim 3

In a charged particle beam exposure apparatus comprising means (21-23) for generating a charged particle beam (20), deflection means (24) for deflecting said charged particle beam (20) electromagnetically and illuminating one small par­tition (28) selected from a plurality of small partitions (28) that constitute one aggregate partition (27) of a plurality of aggregate partitions (27) formed on a transparent mask (26), and means (30-34) for reducing said charged par­ticle beam that passes through said one small partition (27) and that is thus patterned and for exposing the same on a semiconductor device (35) to be exposed, a method of fabricat­ing a semiconductor device comprising the steps of: forming each aggregate partition (27) of said transparent mask to a size such that said charged particle beam (20) can be deflected by said deflection means (24); forming each small partition (28) of said each aggregate partition (27) to a size such that the charged particle beam (20) can be illuminated on said small partition (28) at a time; forming a pattern group containing repeated basic patterns representing at least a portion of a figure that is a repeat unit to print repeated patterns of said semiconductor device (35) to be exposed, as a small partition group of said small partitions (28) within said each aggregate partition (27); in accordance with print pattern information of said semi-­conductor device (35), selecting one aggregate partition (27) as occasion demands and moving said transparent mask (26) mechanically and also deflecting said charged particle beam (20) electromagnetically; and selecting said small partition (28) of said selected aggregate partition (27) sequentially and exposing said repea­ted patterns of said semiconductor device.

Claim 4

In a charged particle beam exposure apparatus comprising means (21-23) for generating a charged particle beam (20), deflection means (24) for deflecting said charged particle beam (20) electromagnetically and illuminating one small par­tition (28) selected from a plurality of small partitions (28) that constitute one aggregate partition (27) of a plurality of aggregate partitions (27) formed on a transparent mask (26), and means (30-34) for reducing said charged par­ticle beam that passes through said one small partition (27) and that is thus patterned and for exposing the same on a semiconductor device (35) to be exposed, a method of fabricat­ing a semiconductor device comprising the steps of: forming each aggregate partition (27) of said transparent mask to a size such that said charged particle beam (20) can be deflected by said deflection means (24); forming each small partition (28) of said each aggregate partition (27) to a size such that the charged particle beam (20) can be illuminated on said small partition (28) at a time; forming a pattern group containing repeated basic patterns representing at least a portion of a figure that is a repeat unit to print repeated patterns of said semiconductor device (35) to be exposed, as a small partition group of said small partitions (28) within said each aggregate partition (27); in accordance with print pattern information of said semi-­conductor device (35), selecting one aggregate partition (27) as occasion demands and moving said transparent mask (26) mechanically and also deflecting said charged particle beam (20) electromagnetically; and selecting said small partition (28) of said selected aggregate partition (27) sequentially and exposing said repea­ted patterns of said semiconductor device.

Claim 5

A transparent mask for a charged particle beam (20) having patterns for patterning the charged particle beam (20) com­prising: a plurality of aggregate partitions (27), each of which is subdivided into a plurality of small partitions (28); each of said small partitions (28) containing a first set of patterns for variable rectangular shape and a second set of patterns for shape repeatedly used.

Claim 6

A transparent mask for a charged particle beam (20) having patterns for patterning the charged particle beam (20) com­prising: a plurality of aggregate partitions (27), each of which is subdivided into a plurality of small partitions (28); each of said small partitions (28) containing a first set of patterns for variable rectangular shape and a second set of patterns for shape repeatedly used.

Claim 7

A transparent mask for a charged particle beam (20) having patterns for patterning the charged particle beam (20) com­prising: a plurality of aggregate partitions (27); neighboring aggregate partitions (27) being isolated from one another by an isolated region (44); each aggregate partition (27) having a small partition (28) group (2); the small partition group of one aggregate partition (27) containing a first set of small partitions (28), each of which is an aperture pattern that is an independent pattern and used for a nonrepeated pattern repeatedly used for exposure, and a second set of small partitions (28), each of which is a repeated basic pattern representing at least a portion of a figure that is a repeat unit for printing a repeated pattern on a semiconductor chip; the size of each of said plurality of aggregate partitions (27) being selected to a size such that said charged particle beam (20) can be deflected with a charged particle beam ex­posure apparatus (25); and the size of each small partition (28) of said small partition group being selected to a size such that said charged particle beam (20) can be illuminated on said small partition (28) at a time.

Claim 8

A transparent mask for a charged particle beam (20) having patterns for patterning the charged particle beam (20) com­prising: a plurality of aggregate partitions (27); neighboring aggregate partitions (27) being isolated from one another by an isolated region (44); each aggregate partition (27) having a small partition (28) group (2); the small partition group of one aggregate partition (27) containing a first set of small partitions (28), each of which is an aperture pattern that is an independent pattern and used for a nonrepeated pattern repeatedly used for exposure, and a second set of small partitions (28), each of which is a repeated basic pattern representing at least a portion of a figure that is a repeat unit for printing a repeated pattern on a semiconductor chip; the size of each of said plurality of aggregate partitions (27) being selected to a size such that said charged particle beam (20) can be deflected with a charged particle beam ex­posure apparatus (25); and the size of each small partition (28) of said small partition group being selected to a size such that said charged particle beam (20) can be illuminated on said small partition (28) at a time.

Claim 9

A charged beam exposure apparatus comprising a shaping transparent mask (26) formed with a plurality of small par­titions (28) including transparent openings corresponding to components of circuit patterns of an integrated circuit, wherein all said small partitions (28) on said transparent mask (26) are grouped into a plurality of aggregate partitions (27), and wherein the layout between said aggregate partitions (27) is determined so that said aggregate partitions (27) which are closed in time in accordance with exposure sequence of a subject (35) to be exposed, are close in location, and the layout between said small partitions (28) within one aggregate partition (27) is determined so that said small partitions (28) which are close in time in accordance with exposure sequence of a subject to be exposed, are close in location.

Claim 10

A charged beam exposure apparatus comprising a shaping transparent mask (26) formed with a plurality of small par­titions (28) including transparent openings corresponding to components of circuit patterns of an integrated circuit, wherein all said small partitions (28) on said transparent mask (26) are grouped into a plurality of aggregate partitions (27), and wherein the layout between said aggregate partitions (27) is determined so that said aggregate partitions (27) which are closed in time in accordance with exposure sequence of a subject (35) to be exposed, are close in location, and the layout between said small partitions (28) within one aggregate partition (27) is determined so that said small partitions (28) which are close in time in accordance with exposure sequence of a subject to be exposed, are close in location.

Claim 11

A charged beam exposure apparatus as set forth in claim 5, wherein said transparent mask (26) has formed thereon small partitions (28) required for pattern exposure of the same integrated circuit, and the pattern exposure required for fabrication of said integrated circuit is performed without changing said transparent mask (26).