Patent JPS59125618A successfully refreshed from Google Patents.
EP0364155A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Diamond composite heat sink for use with semiconductor devices
Assignee: BP Corp North America Inc
•
Filing: 1989-10-05
•
Granted: —
•
Expires: 2009-10-05
Abstract
Abstract A composite comprised of diamond particles embedded in a metal matrix is a highly satisfactory heat sink material for use with a semiconductor.
Inventors
- 👤 Robert Danner Burnham
- 👤 Ricardo Simon Sussmann
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 08:31
CPC Classifications
C; C22; C22C; C22C26/00; H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/254; H01; H01S; H01S5/00; H01S5/02; H01S5/024; H01S5/02476; H01S5/02484; Y; Y10; Y10S; Y10S165/00; Y10S165/905; Y10T; Y10T428/00; Y10T428/12; Y10T428/12486; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
44 words
A structure comprising a semiconductor in thermal contact with a heat-conductive composite, wherein said composite is comprised of diamond particles embedded in a metal matrix and said composite has a coefficient of thermal expansion which is substantially the same as that of said semiconductor.
Claim 2
Dependent Claim
44 words
A structure comprising a semiconductor in thermal contact with a heat-conductive composite, wherein said composite is comprised of diamond particles embedded in a metal matrix and said composite has a coefficient of thermal expansion which is substantially the same as that of said semiconductor.
Claim 3
Dependent Claim
27 words
The structure of claim 1 wherein said metal matrix is comprised of at least one metal selected from the group consisting of copper, silver, gold and aluminum.
Claim 4
Dependent Claim
13 words
The structure of claim 1 wherein said metal matrix is comprised of copper.
Claim 5
Dependent Claim
20 words
The structure of claim 1 wherein said diamond particles have a largest dimension which is smaller than about 3 µm.
Claim 6
Dependent Claim
29 words
The structure of claim 1 wherein the difference between the coefficient of thermal expansion of said composite and that of said semiconductor is less than about 1 x 10⁻⁶/°C.
Claim 7
Dependent Claim
34 words
The structure of claim 1 wherein said semiconductor is comprised of a material selected from the group consisting of silicon, germanium and combinations of elements from Groups III and V of the Periodic Table.
Claim 8
Dependent Claim
40 words
A heat sink for mounting the semiconductor component of a heat-dissipating semiconductor electronic device wherein said heat sink is adapted for mounting said semiconductor component thereon and is comprised of a composite of diamond particles embedded in a metal matrix.
Claim 9
Dependent Claim
40 words
A heat sink for mounting the semiconductor component of a heat-dissipating semiconductor electronic device wherein said heat sink is adapted for mounting said semiconductor component thereon and is comprised of a composite of diamond particles embedded in a metal matrix.
Claim 10
Dependent Claim
22 words
The heat sink of claim 7 wherein said electronic device is selected from the group consisting of laser diodes and light-emitting diodes.
Claim 11
Dependent Claim
28 words
The heat sink of claim 7 wherein said metal matrix is comprised of at least one metal selected from the group consisting of copper, silver, gold and aluminum.
Claim 12
Dependent Claim
14 words
The heat sink of claim 7 wherein said metal matrix is comprised of copper.
Claim 13
Dependent Claim
21 words
The heat sink of claim 7 wherein said diamond particles have a largest dimension which is smaller than about 3 µm.
Claim 14
Dependent Claim
36 words
The heat sink of claim 7 wherein said semiconductor component is comprised of a material selected from the group consisting of silicon, germanium and combinations of elements from Groups III and V of the Periodic Table.
Claim 15
Dependent Claim
26 words
The heat sink of claim 7 wherein said composite has a coefficient of thermal expansion which is substantially the same as that of said semiconductor component.
Claim 16
Dependent Claim
30 words
The heat sink of claim 13 wherein the difference between the coefficient of thermal expansion of said composite and that of said semiconductor is less than about 1 x 10⁻⁶/°C.
Claim 17
Dependent Claim
28 words
An electronic device which comprises a semiconductor in thermal contact with a thermally conductive composite, wherein said composite is comprised of diamond particles embedded in a metal matrix.
Claim 18
Dependent Claim
28 words
An electronic device which comprises a semiconductor in thermal contact with a thermally conductive composite, wherein said composite is comprised of diamond particles embedded in a metal matrix.
Claim 19
Dependent Claim
25 words
The electronic device of claim 15 wherein said composite has a coefficient of thermal expansion which is substantially the same as that of said semiconductor.
Claim 20
Dependent Claim
28 words
The electronic device of claim 16 wherein said metal matrix is comprised of at least one metal selected from the group consisting of copper, silver, gold and aluminum.
Claim 21
Dependent Claim
21 words
The electronic device of claim 16 wherein said diamond particles have a largest dimension which is smaller than about 3 µm.
Claim 22
Dependent Claim
30 words
The electronic device of claim 16 wherein the difference between the coefficient of thermal expansion of said composite and that of said semiconductor is less than about 1 x 10⁻⁶/°C.
Claim 23
Dependent Claim
35 words
The electronic device of claim 16 wherein said semiconductor is comprised of a material selected from the group consisting of silicon, germanium and combinations of elements from Groups III and V of the Periodic Table.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.