EP0359513A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor chip carrier and method of making it
Assignee: Hitachi Ltd
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Filing: 1989-09-12
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Granted: —
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Expires: 2009-09-12
Abstract
Abstract A semiconductor chip carrier for carrying a single chip (15) and having a built-in capacitor, comprises a ceramic insulator body (2) having first and second opposite main faces, and a plurality of conductor lines (6,7) comprising power lines, ground lines and signal lines for forming connections to said chip extending through said ceramic body (2) from one main face to the other. A layer (3) of ceramic dielectric material is embedded in said ceramic body remote from said main faces, and electrode layers embedded in the ceramic body (2) contact the capacitor layer (3), to form the built-in capacitor. The power and ground lines (16) pass through and contact the capacitor layer (3) and are connected to said electrodes so that said capacitor provides capacitance between the power lines and the ground lines. To minimize noise generation and improve signal processing speed, the signal lines (7) do not contact said capacitor layer (3) and extend past it at locations spaced laterally from it.
Inventors
- 👤 Hideo Suzuki
- 👤 Hiroichi Shinohara
- 👤 Satoru Ogihara
- 👤 Keiichirou Nakanishi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 12:02
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W40/00; H10W40/40; H10W40/47; H10W44/00; H10W44/601; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/851; H10W72/874; H10W72/877; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
118 words
A ceramic semiconductor chip carrier for carrying a single chip (15) and having a built-in capacitor (3;43) providing capacitance between conductor lines comprising power, ground and signal lines (6,7;47,48) for the chip extending through the carrier, said capacitor being formed by at least one dielectric layer (4;44) and electrodes (5;46) embedded in the carrier, said power and ground lines (4;47) passing through said dielectric layer (4;44) making contact therewith and being connected to said electrodes (5;46) at the faces of the dielectric layer so that the capacitance is between the power lines and the ground lines, characterized in that said signal lines (7;48) extend past the dielectric layer (4;44) without contacting it at locations spaced laterally from it.
Claim 2
Dependent Claim
118 words
A ceramic semiconductor chip carrier for carrying a single chip (15) and having a built-in capacitor (3;43) providing capacitance between conductor lines comprising power, ground and signal lines (6,7;47,48) for the chip extending through the carrier, said capacitor being formed by at least one dielectric layer (4;44) and electrodes (5;46) embedded in the carrier, said power and ground lines (4;47) passing through said dielectric layer (4;44) making contact therewith and being connected to said electrodes (5;46) at the faces of the dielectric layer so that the capacitance is between the power lines and the ground lines, characterized in that said signal lines (7;48) extend past the dielectric layer (4;44) without contacting it at locations spaced laterally from it.
Claim 3
Dependent Claim
53 words
A semiconductor chip carrier according to claim 1 having a ceramic insulator body (2;42) in which said capacitor layer (4;44) of ceramic dielectric material is embedded remote from opposed main faces of said body (2), the electrodes (5) being electrode layers embedded in said ceramic body (2) and contacting said capacitor layer (4).
Claim 4
Dependent Claim
31 words
A semiconductor chip carrier according to claim 1 or claim 2 wherein each said signal line (7;48) is spaced laterally from said dielectric layer (4;44) by not less than 50 µm.
Claim 5
Dependent Claim
28 words
A semiconductor chip carrier according to claim 3 wherein each said signal line (7;48) is spaced laterally from said dielectric layer (4;44) by not less than 100 µm.
Claim 6
Dependent Claim
21 words
A semiconductor chip carrier according to any one of claims 1 to 4 wherein there is a single said capacitor layer(4;44).
Claim 7
Dependent Claim
26 words
A semiconductor chip carrier according to claim 5 wherein there are two said electrodes (5;46) only, respectively on opposite faces of said single capacitor layer (4;44).
Claim 8
Dependent Claim
36 words
A semiconductor chip carrier according to any one of claims 1 to 6 wherein each said conductor line (6,7;47,48) extends substantially straight through said carrier from one main face thereof to the opposite main face thereof.
Claim 9
Dependent Claim
102 words
A semiconductor chip carrier according to any one of claims 1 to 7 wherein the power and ground lines (6;47) on the one hand and the signal lines (7;48) on the other hand are grouped into respective zones as seen in plan view looking onto one main face of said carrier such that one of the following arrangements (a) and (b) applies a) the power and ground line zone is a central zone of the carrier surrounded by the signal line zone b) the signal line zone is a central area of said carrier surrounded by the power and ground line zone.
Claim 10
Dependent Claim
26 words
A semiconductor chip carrier according to any one of claims 1 to 8 wherein the dielectric constant of the capacitor layer (4;44) is at least 500.
Claim 11
Dependent Claim
29 words
A semiconductor chip carrier according to any one of claims 1 to 9 wherein the capacitance between the power lines and ground lines (6;47) is at least 0.01 µF.
Claim 12
Dependent Claim
39 words
A semiconductor chip carrier according to any one of claims 1 to 10 wherein the total number of power and ground lines (6;47) is at least 100 and the total number of signal lines (7;48) is at least 100.
Claim 13
Dependent Claim
27 words
A semiconductor chip carrier according to any one of claims 1 to 11 wherein the thickness of the capacitor layer (4;44) is not more than 10 µm.
Claim 14
Dependent Claim
36 words
A semiconductor chip carrier according to any one of claims 1 to 12 wherein the capacitance between each said signal line (7;48) and the nearest of said electrodes (5;46) thereto is not more than 0.25 pF.
Claim 15
Dependent Claim
55 words
A semiconductor chip carrier according to any one of claims 1 to 13 having a ceramic insulator body (2) of ceramic glass and sintered barrier layers (45) on each face of said dielectric layer (4) to prevent diffusion of components of the dielectric layer (4) into the ceramic glass during firing of the chip carrier.
Claim 16
Dependent Claim
27 words
A semiconductor chip carrier according to any one of claims 1 to 14 having a single semiconductor chip (15) mounted thereon and connected to said conductor lines(6,7;47,48).
Claim 17
Dependent Claim
44 words
A semiconductor chip carrier and chip according to claim 15 wherein said chip (15) is mounted on said carrier by solder elements (18) which make direct connection between electrodes of the chip and said conductor lines (6,7;47,48) at one main face of the carrier.
Claim 18
Dependent Claim
30 words
A semiconductor chip carrier and chip according to claim 15 or claim 16 wherein said chip (15) is hermetically enclosed by a ceramic housing (16) sealed to said chip carrier.
Claim 19
Dependent Claim
29 words
A semiconductor chip carrier and chip according to any one of claims 15 to 17 wherein a layer of resin (19) bonds said chip (15) to said chip carrier.
Claim 20
Dependent Claim
22 words
A semiconductor chip carrier and chip according to any one of claims 15 to 18 mounted on a wiring circuit board (22).
Claim 21
Dependent Claim
44 words
A semiconductor apparatus having a semiconductor wiring circuit board (22) carrying a plurality of semiconductor chips (15), wherein each said chip (15) is individually mounted on said circuit board by a semiconductor chip carrier (1) according to any one of claims 1 to 14.
Claim 22
Dependent Claim
43 words
A semiconductor module comprising at least one wiring circuit board (22) according to claim 20 and a housing (16) enclosing said carriers (1) and said semiconductor chips (15) thereon, said housing having means (18,27) for flow of coolant fluid to cool said chips.
Claim 23
Dependent Claim
149 words
A method of manufacture of a semiconductor chip carrier according to claim 1, comprising assembling and co-firing a plurality of green sheets (8,10;42,44,45) of ceramic material having through-holes (9) filled with conductive material (12;47,48) to form conductor lines in the finished carrier, wherein said green sheets (8,10;42,44,45) comprise (a) at least one green sheet (10;44) of dielectric material which in the fired carrier forms a capacitor layer of said capacitor, (b) at least two green sheets (8;42,45) of insulator material embedding said at least one green sheet of dielectric material and having a larger area than said at least one green sheet of dielectric material, whereby some of said conductor lines which are to be signal lines do not contact said dielectric material, there further being electrode-forming material (14;46) embedded in the assembled green sheets adjacent said green sheet (10;44) of dielectric material to form electrodes of said capacitor.
Claim 24
Dependent Claim
33 words
A method according to claim 22 wherein said green sheet (10;44) of dielectric material is located in the assembled green sheets remote from the edges of the green sheets (8;42,45) of insulating material.
Claim 25
Dependent Claim
50 words
A method according to claim 22 or claim 23 wherein said green sheets (8;42,45) of insulator material and said at least one green sheet (10;44) of dielectric material all have approximately the same temperatures of starting and finishing shrinkage during firing and approximately the same amount of shrinkage during firing.
Claim 26
Independent Claim
58 words
A method according to any one of claims 22 to 24 wherein said green sheets further comprise at least two intermediate sheets (45) located adjacent respectively opposite sides of said green sheet (44) of dielectric material, to provide a barrier against diffusion of matter from the sheets of insulator material (42) into the capacitor layer (44) during firing.
Claim 27
Dependent Claim
149 words
For use in the method of any one of claims 22 to 25, a combination of green sheets (8,10;42,44,45) of ceramic material having through holes (9) filled with conductive material (12;47,48) to form conductor lines in the finished carrier, said green sheets comprising (a) at least one green sheet (10;44) of dielectric material which in the fired carrier forms a capacitor layer of said capacitor, (b) at least two green sheets (8;42,45) of insulator material having a larger area than said at least one green sheet (10;44) of dielectric material, such that on assembly and firing of said green sheets some conductor lines formed do not pass through said capacitor layer and other conductor lines formed do pass through said capacitor layer, said green sheets further carrying electrode-forming material (14;46) for forming electrodes adjacent said capacitor layer and contacting said conductor lines which do pass through said capacitor layer.
Claim 28
Dependent Claim
34 words
A combination of green sheets according to claim 26 wherein there are more than two said green sheets (8;42) of insulator material and two of said sheets of insulator material carry said electrode-forming material.
Claim 29
Dependent Claim
63 words
A combination of green sheets according to claim 26 further comprising at least two intermediate sheets (45) of composition different from that of said green sheets (42) of insulator material and adapted to form barrier layers to prevent diffusion of matter from said sheets of insulator material into the capacitor layer (44) during firing, said intermediate sheets (45) carrying said electrode-forming material (46)
References Cited (Backward Citations)
No citation records indexed.
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