EP0358497A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Broadbrand microstrip to coplanar waveguide transition by anisotropic etching of gallium arsenide
Assignee: Varian Medical Systems Inc
•
Filing: 1989-09-07
•
Granted: —
•
Expires: 2009-09-07
Abstract
Abstract A broadband interconnection between a microstrip (20, 22) and a coplanar (10, 12) waveguide is provided without use of via holes by using anisotropic etching of gallium arsenide to form a sloped surface between connection points. The sloped surface is then metallized to provide the interconnection.
Inventors
- 👤 Chia-Geng Li
- 👤 Steve G. Bandy
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 18:31
CPC Classifications
H; H01; H01P; H01P11/00; H01P5/00; H01P5/08
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
155 words
A broadband interconnection device used for interconnection between a microstrip and a coplanar waveguide, comprising: a monolithic semiconductor device having a coplanar waveguide defined at a first edge on an upper surface, said coplanar waveguide including a conductor and a pair of ground planes, a conductor of a microstrip defined on an opposite edge of said top surface, and a ground plane of a microstrip on a bottom surface, said conductor of said coplanar waveguide being electrically connected to said conductor of said microstrip; a pair of sloped surfaces in said monolithic semiconductor device, said surface sloping from a pair of ground planes of said coplanar waveguide on said upper surface to said ground plane of a microstrip on a bottom surface, said pair of sloped surfaces being metalized with high conductivity metal, said high conductivity metal being in contact with said ground plane of said microstrip and said ground planes of said coplanar waveguide.
Claim 2
Dependent Claim
155 words
A broadband interconnection device used for interconnection between a microstrip and a coplanar waveguide, comprising: a monolithic semiconductor device having a coplanar waveguide defined at a first edge on an upper surface, said coplanar waveguide including a conductor and a pair of ground planes, a conductor of a microstrip defined on an opposite edge of said top surface, and a ground plane of a microstrip on a bottom surface, said conductor of said coplanar waveguide being electrically connected to said conductor of said microstrip; a pair of sloped surfaces in said monolithic semiconductor device, said surface sloping from a pair of ground planes of said coplanar waveguide on said upper surface to said ground plane of a microstrip on a bottom surface, said pair of sloped surfaces being metalized with high conductivity metal, said high conductivity metal being in contact with said ground plane of said microstrip and said ground planes of said coplanar waveguide.
Claim 3
Dependent Claim
14 words
The device of claim 1 wherein said sloped surface is formed by anisotropic etching.
Claim 4
Dependent Claim
28 words
The device of claim 1 wherein said sloped surface subtends and angle of no less than forty degrees and no more than seventy degrees with said ground planes.
Claim 5
Independent Claim
99 words
A method of forming broadband interconnection between a microstrip and a coplanar waveguide, comprising the steps of: cleaning a semiconductor wafer substrate having a top surface and a bottom surface; metallizing said bottom surface; etching a pair of separated sloping surfaces through said wafer such that said sloping surfaces slope from said top surface to said metallization on said bottom surface, said sloping surfaces being roughly parallel; metallizing said sloping surafaces to form conducting paths from said metallization on said bottom surface to said top surface; and forming a conducting strip between said sloping surfaces on said top surface.
Claim 6
Independent Claim
99 words
A method of forming broadband interconnection between a microstrip and a coplanar waveguide, comprising the steps of: cleaning a semiconductor wafer substrate having a top surface and a bottom surface; metallizing said bottom surface; etching a pair of separated sloping surfaces through said wafer such that said sloping surfaces slope from said top surface to said metallization on said bottom surface, said sloping surfaces being roughly parallel; metallizing said sloping surafaces to form conducting paths from said metallization on said bottom surface to said top surface; and forming a conducting strip between said sloping surfaces on said top surface.
Claim 7
Dependent Claim
34 words
The method accoring to claim 4 wherein said sloping surface is formed at an angle to said metallization on said bottom surface of no less than forty degrees and no more than seventy degrees.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.