EP0353693A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Compound semiconductor mesfet device
Assignee: Fujitsu Ltd
•
Filing: 1989-07-31
•
Granted: —
•
Expires: 2009-07-31
Abstract
Abstract A metal-semiconductor field effect transistor comprises a substrate (101, 201, 301, 401) of a group III-V compound having a zinc blende structure, a gate electrode (103,203, 303, 403) provided on the substrate in a predetermined direction, a channel region (102, 202, 302, 402) defined in the substrate in alignment with the gate electrode, a source region (104, 204, 304, 404) defined in the substrate at one side of the channel region, a drain region (105, 205, 305, 405) defined in the substrate at the other side of the channel region, a source electrode (111, 211, 311, 411) provided on the substrate so as to cover a first p.art of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (112, 212, 312, 412) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (109, 209, 309, 409) of a material experiencing a stress and provided so as to cover the second part of the source region and the second part of the drain region, wherein the passivation film comprises an inner area part (109a, 209a, 309a, 409a) and a marginal area part (109b, 209b, 309b, 409b) defined such that the marginal area part has a modified thickness relative to that of the inner area part.
Inventors
- 👤 Shigeru Tatsuta
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 01:55
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D30/87; H10D62/00; H10D62/40; H10D62/405; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/60; H10D64/64; H10W; H10W74/00; H10W74/10; H10W74/131; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (101) of a group III-V compound semiconductor having a zinc blende structure, a gate electrode (103) provided on the substrate, a channel region (102) defined in the substrate in alignment with the gate electrode, a source region (104) defined in the substrate at one side of the channel region, a drain region (105) defined in the substrate at the other side of the channel region, a source electrode (111) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (112) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (109) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, characterized in that said gate electrode (103) extends in an <0 1 1> direction of the substrate (101), the channel region (102) extends in an <011> direction in correspondence to the gate electrode, said passivation film (109) comprises a material experiencing a compressive stress, said passivation film comprises an inner area part (109a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain region close to the gate electrode, and a marginal area part (109b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said marginal area part has a thickness substantially reduced relative to that of said inner area part.
Claim 2
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (101) of a group III-V compound semiconductor having a zinc blende structure, a gate electrode (103) provided on the substrate, a channel region (102) defined in the substrate in alignment with the gate electrode, a source region (104) defined in the substrate at one side of the channel region, a drain region (105) defined in the substrate at the other side of the channel region, a source electrode (111) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (112) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (109) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, characterized in that said gate electrode (103) extends in an <0 1 1> direction of the substrate (101), the channel region (102) extends in an <011> direction in correspondence to the gate electrode, said passivation film (109) comprises a material experiencing a compressive stress, said passivation film comprises an inner area part (109a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain region close to the gate electrode, and a marginal area part (109b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said marginal area part has a thickness substantially reduced relative to that of said inner area part.
Claim 3
Dependent Claim
20 words
A metal-semiconductor field effect transistor as claimed in claim 1 characterized in that said passivation film (109) comprises silicon nitride.
Claim 4
Dependent Claim
44 words
A metal-semiconductor field effect transistor as claimed in claim 1 or 2 characterized in that said marginal area part (109b) is defined relative to said inner area part by a stepped part (110) across Which a thickness of the passivation film (109) changes stepwise.
Claim 5
Dependent Claim
45 words
A metal-semiconductor field effect transistor as claimed in claim 1 or 3 characterized in that said inner area part (109a) of the passivation film (109) has a thickness of about 1000 A and said marginal area (109b) part has a thickness of about 300 A.
Claim 6
Dependent Claim
35 words
A metal-semiconductor field effect transistor as claimed in claim 1 or 2 characterized in that said the thickness of the marginal area part (109b) is reduced gradually with increased distance from the gate electrode (103).
Claim 7
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (201) of a group III-V compound semiconductor havirg a zinc blende structure, a gate electrode (203) provided on the substrate, a channel region (202) defined in the substrate in alignment with the gate electrode, a source region (204) defined in the substrate at one side of the channel region, a drain region (205) defined in the substrate at the other side of the channel region, a source electrode (211) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (212) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (209) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, characterized in that said gate electrode (203) extends in an <0 1 1> direction of the substrate (201), the channel region (202) extends in an <011> direction in correspondence to the gate electrode, said passivation film (209) comprises a material experiencing a tensile stress, said passivation film comprises an inner area part (209a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain regicn close to the gate electrode, and a marginal area part (209b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said inner area part has a thickness substantially reduced relative to that of said marginal area part.
Claim 8
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (201) of a group III-V compound semiconductor havirg a zinc blende structure, a gate electrode (203) provided on the substrate, a channel region (202) defined in the substrate in alignment with the gate electrode, a source region (204) defined in the substrate at one side of the channel region, a drain region (205) defined in the substrate at the other side of the channel region, a source electrode (211) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (212) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (209) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, characterized in that said gate electrode (203) extends in an <0 1 1> direction of the substrate (201), the channel region (202) extends in an <011> direction in correspondence to the gate electrode, said passivation film (209) comprises a material experiencing a tensile stress, said passivation film comprises an inner area part (209a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain regicn close to the gate electrode, and a marginal area part (209b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said inner area part has a thickness substantially reduced relative to that of said marginal area part.
Claim 9
Dependent Claim
20 words
A metal-semiconductor field effect transistor as claimed in claim 6 characterized in that said passivation film (209) comprises silicon oxide.
Claim 10
Dependent Claim
43 words
A metal-semiconductor field effect transistor as claimed in claim 6 or 7 characterized in that said marginal area part (209b) is defined relative to said inner area part by a stepped part (210) across which a thickness of the passivation film changes stepwise.
Claim 11
Dependent Claim
49 words
A metal-semiconductor field effect transistor as claimed in claim 6 or 8 characterized in that said inner area part (209a) of the passivation film (209) has a thickness of about 300 A and said marginal area part (209b) of the passivation film has a thickness of about 1000 A.
Claim 12
Dependent Claim
31 words
A metal-semiconductor field effect transistor as claimed in claim 6 or 7 characterized in that the thickness of the inner area part (209a) is reduced gradually towards the gate electrode (203).
Claim 13
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (301) of a group III-V compound semiconductor having a zinc blende structure, a gate electrode (303) provided on the substrate, a channel region (302) defined in the substrate in alignment with the gate electrode, a source region (304) defined in the substrate at one side of the channel region, a drain region (305) defined in the substrate at the other side of the channel region, a source electrode (311) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (312) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (309) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain regicn, characterized in that said gate electrode (303) extends in an <011> direction of the substrate (301), the channel region (302) extends in an <0 1 1> direction in correspondence to the gate electrode, said passivation film (309) comprises a material experiencing a tensile stress, said passivation film comprises an inner area part (309a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain region close to the gate electrode, and a marginal area part (309b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said marginal area part has a thickness substantially reduced relative to that of said inner area part.
Claim 14
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (301) of a group III-V compound semiconductor having a zinc blende structure, a gate electrode (303) provided on the substrate, a channel region (302) defined in the substrate in alignment with the gate electrode, a source region (304) defined in the substrate at one side of the channel region, a drain region (305) defined in the substrate at the other side of the channel region, a source electrode (311) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (312) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (309) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain regicn, characterized in that said gate electrode (303) extends in an <011> direction of the substrate (301), the channel region (302) extends in an <0 1 1> direction in correspondence to the gate electrode, said passivation film (309) comprises a material experiencing a tensile stress, said passivation film comprises an inner area part (309a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain region close to the gate electrode, and a marginal area part (309b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said marginal area part has a thickness substantially reduced relative to that of said inner area part.
Claim 15
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (401) of a group III-V compound semiconductor having a zinc blende structure, a gate electrode (403) provided on the substrate, a channel region (402) defined in the substrate in alignment with the gate electrode, a source region (404) defined in the substrate at one side of the channel region, a drain region (405) defined in the substrate at the other side of the channel region, a source electrode (411) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (412) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (409) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, characterized in that said gate electrode (403) extends in an <011> direction of the substrate (401), the channel region (402) extends in an <0 1 1> direction in correspondence to the gate electrode, said passivaticn film (409) comprises a material experiencing a compressive stress, said passivation film comprises an inner area part (409a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain region close to the gate electrode, and a marginal area part (409b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said inner area part has a thickness substantially reduced relative to that of said marginal area part.
Claim 16
Dependent Claim
325 words
A metal-semiconductor field effect transistor, comprising a substrate (401) of a group III-V compound semiconductor having a zinc blende structure, a gate electrode (403) provided on the substrate, a channel region (402) defined in the substrate in alignment with the gate electrode, a source region (404) defined in the substrate at one side of the channel region, a drain region (405) defined in the substrate at the other side of the channel region, a source electrode (411) provided on the substrate so as to cover a first part of the source region far from the gate electrode while leaving a second part of the source region close to the gate electrode uncovered, a drain electrode (412) provided on the substrate so as to cover a first part of the drain region far from the gate electrode while leaving a second part of the drain region close to the gate electrode uncovered, and a passivation film (409) provided so as to cover the gate electrode, said second part of the source region and said second part of the drain region, characterized in that said gate electrode (403) extends in an <011> direction of the substrate (401), the channel region (402) extends in an <0 1 1> direction in correspondence to the gate electrode, said passivaticn film (409) comprises a material experiencing a compressive stress, said passivation film comprises an inner area part (409a) for covering a part of said second part of the source region close to the gate electrode and for covering a part of said second part of the drain region close to the gate electrode, and a marginal area part (409b) for covering a part of said second part of the source region far from the gate electrode and a part of said second part of the drain region far from the gate electrode, and that said inner area part has a thickness substantially reduced relative to that of said marginal area part.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.