EP0352801A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Production method of a semiconductor-on-insulator structure with gettering sites
Assignee: Fujitsu Ltd
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Filing: 1989-07-27
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Granted: —
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Expires: 2009-07-27
Abstract
Abstract A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate (24, 31, 100), an insulator layer (25, 23, 32, 34, 101) provided on the base substrate, an active substrate (21, 33, 102) provided on the insulator layer and having gettering sites (22, 35, 103), and an active layer (26, 36, 104) provided on the active substrate (21, 33, 102) and made of a semiconductor. The gettering sites (22, 35, 103) under the active layer (26, 36, 104) eliminate crystal defects and impurities generated in the active layer (26, 36, 104) during the semiconductor device production in which elements are formed in the active layer (26, 36, 104).
Inventors
- 👤 Kunihiko Wada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 16:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D62/85; H10D62/854; H10P; H10P36/00; H10P36/03; H10P36/07; H10P36/20; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1918; H10P95/00; H10P95/40; H10P95/408; Y; Y10; Y10S; Y10S428/00; Y10S428/901
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
78 words
A substrate having a semiconductor-on-insulator structure comprising a base substrate (24, 31, 100), and an insulator layer (25, 23, 32, 34, 101) provided on said base substrate, characterized in that there are provided: an active substrate (21, 33, 102) provided on said insulator layer (25, 23, 32, 34, 101), said active substrate having gettering sites (22, 35, 103); and an active layer (26, 36, 104) provided on said active substrate, said active layer being made of a semiconductor.
Claim 2
Dependent Claim
78 words
A substrate having a semiconductor-on-insulator structure comprising a base substrate (24, 31, 100), and an insulator layer (25, 23, 32, 34, 101) provided on said base substrate, characterized in that there are provided: an active substrate (21, 33, 102) provided on said insulator layer (25, 23, 32, 34, 101), said active substrate having gettering sites (22, 35, 103); and an active layer (26, 36, 104) provided on said active substrate, said active layer being made of a semiconductor.
Claim 3
Dependent Claim
33 words
The substrate as claimed in claim 1, characterized in that said base substrate (24, 31, 100) is made of a material selected from a group including silicon, polysilicon, silicon carbide, metal, and insulator.
Claim 4
Dependent Claim
36 words
The substrate as claimed in claim 1 or 2, characterized in that said insulator layer (25, 23, 32, 34, 101) is made of a material selected from a group including silicon dioxide, glass and phosphosilicate glass.
Claim 5
Dependent Claim
36 words
The substrate as claimed in any of claims 1 to 3, characterized in that said active substrate (21, 33, 102) is made of a material selected from a group of semiconductors including silicon and gallium arsenide.
Claim 6
Dependent Claim
34 words
The substrate as claimed in any of claims 1 to 4, characterized in that said active layer (26, 36, 104) is made of a material selected from a group including silicon and gallium arsenide.
Claim 7
Dependent Claim
44 words
The substrate as claimed in claim 1, characterized in that said insulator layer (25, 23, 32, 34, 101) is made of silicon dioxide, said active substrate (21, 33, 102) is made of silicon, and said active layer (26, 36, 104) is made of silicon.
Claim 8
Dependent Claim
30 words
The substrate as claimed in any of claims 1 to 6, characterized in that there are further provided metal oxide semiconductor elements formed in said active layer (26, 36, 104).
Claim 9
Independent Claim
97 words
A method of producing a substrate having a semiconductor-on-insulator structure, characterized in that said method comprises the steps of: preparing a stacked structure having a base substrate (24,31,100) and an insulator layer (25, 23, 32, 34, 101) formed thereon; forming an active substrate (21, 33, 102) on the insulator layer (25, 23, 32, 34, 101) of said stacked structure, said active substrate (21, 33, 102) having gettering sites (22, 35, 103): and forming an active layer (26, 36, 104) on said active substrate (21, 33, 102), said active layer (26, 36, 104) being made of a semiconductor.
Claim 10
Independent Claim
97 words
A method of producing a substrate having a semiconductor-on-insulator structure, characterized in that said method comprises the steps of: preparing a stacked structure having a base substrate (24,31,100) and an insulator layer (25, 23, 32, 34, 101) formed thereon; forming an active substrate (21, 33, 102) on the insulator layer (25, 23, 32, 34, 101) of said stacked structure, said active substrate (21, 33, 102) having gettering sites (22, 35, 103): and forming an active layer (26, 36, 104) on said active substrate (21, 33, 102), said active layer (26, 36, 104) being made of a semiconductor.
Claim 11
Dependent Claim
33 words
The method as claimed in claim 8, characterized in that said base substrate (24, 31, 100) is made of a material selected from a group including silicon, polysilicon, silicon carbide, metal, and insulator.
Claim 12
Dependent Claim
36 words
The method as claimed in claim 8 or 9, characterized in that said insulator layer (25, 23, 32, 34, 101) is made of a material selected from a group including silicon dioxide, glass and phosphosilicate glass.
Claim 13
Independent Claim
36 words
The method as claimed in any of claims 8 to 10, characterized in that said active substrate (21, 33, 102) is made of a material selected from a group of semiconductors including silicon and gallium arsenide.
Claim 14
Independent Claim
34 words
The method as claimed in any of claims 8 to 11, characterized in that said active layer (26, 36, 104) is made of a material selected from a group including silicon and gallium arsenide.
Claim 15
Independent Claim
48 words
The method as claimed in any of claims 8 to 12, characterized in that said insulator layer (25, 23, 32, 34, 101) is made of silicon dioxide, said active substrate (21, 33, 102) is made of silicon, and said active layer (26, 36, 104) is made of silicon.
Claim 16
Independent Claim
33 words
The method as claimed in any of claims 8 to 13, characterized in that said method further comprises the step of forming metal oxide semiconductor elements in said active layer (26, 36, 104).
Claim 17
Independent Claim
73 words
The method as claimed in any of claims 8 to 14, characterized in that said step of forming said active substrate (21, 33) on said insulator layer (25, 23, 32, 34) includes a substep of forming an insulator layer (23, 34) on said active substrate (21, 33) and a substep of bonding the insulator layer (23, 34) of said active substrate (21, 33) on the insulator layer (25, 32) of said stacked structure.
Claim 18
Independent Claim
108 words
The method as claimed in any of claims 8 to 14, characterized in that said step of forming said active substrate (21, 33) on said insulator layer (25, 23, 32, 34) includes a substep of preparing said active substrate (21, 33) by Czochralski method, a substep of forming the gettering sites (22, 35) in said active substrate (21, 33) by a thermal process, a substep of forming an insulator layer (23, 34) on said active substrate (21, 33) by a thermal process, and a substep of bonding the insulator layer (23, 34) of said active substrate (21, 33) on the insulator layer (25, 32) of said stacked structure.
Claim 19
Independent Claim
36 words
The method as claimed in any of claims 8 to 16, characterized in that said step of forming said active layer (26, 36, 104) grows said active layer (26, 36, 104) by an epitaxial growth process.
Claim 20
Independent Claim
55 words
The method as claimed in any of claims 8 to 17, characterized in that said step of forming said active substrate (21, 33, 102) forms the gettering sites (22, 35, 103) in said active substrate (21, 33, 102) before forming said active substrate (21, 33, 102) on said insulator layer (25, 23, 32, 34, 101).
Claim 21
Independent Claim
55 words
The method as claimed in any of claims 8 to 18, characterized in that said step of forming said active substrate (21, 33, 102) forms the gettering sites (22, 35, 102) in said active substrate (21, 33, 102) after forming said active substrate (21, 33, 102) on said insulator layer (25, 23, 32, 34, 101).
References Cited (Backward Citations)
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