EP0352472A2
Expired / Lapsed
EP
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Heteroepitaxy of lattice-mismatched semiconductor materials
Assignee: Texas Instruments Inc
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Filing: 1989-06-20
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Granted: —
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Expires: 2009-06-20
Abstract
Abstract Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
Inventors
- 👤 Hisashi Shichijo
- 👤 Richard J. Matyi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 04:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
54 words
A method of forming an epitaxial layer on a dissimilar substrate, comprising the steps of: a) providing a substrate with a surface layer including a grid; and b) growing a first layer on said grid and said surface layer, said growth characterized by single crystal regions on said exposed portions of said surface layer.
Claim 2
Independent Claim
54 words
A method of forming an epitaxial layer on a dissimilar substrate, comprising the steps of: a) providing a substrate with a surface layer including a grid; and b) growing a first layer on said grid and said surface layer, said growth characterized by single crystal regions on said exposed portions of said surface layer.
Claim 3
Dependent Claim
15 words
The method of claim 1, comprising the further step of: a) Annealing said first layer.
Claim 4
Dependent Claim
48 words
The method of claim 2, wherein: a) said surface layer is silicon; b) said grid is made of material from the group consisting of silicon dioxide, silicon nitride, and combinations thereof; c) said first layer is Al x Ga 1- x As for 0 ≦ x ≦ 1.0.
Claim 5
Dependent Claim
20 words
The method of claim 1, wherein said growth of said first layer further comprises periodically changing the temperature during growth.
Claim 6
Dependent Claim
30 words
The method of claim 1, wherein said growth of said first layer further comprises periodically changing the composition of said first layer material during growth through to form a superlattice.
Claim 7
Dependent Claim
22 words
The method of claim 3, wherein said anneal is a temperature of approximately 850C for approximately 15 minutes under an arsenic overpressure.
Claim 8
Dependent Claim
18 words
The method of claim 3, wherein said anneal is a temperature of approximately 950C for approximately 10 seconds.
Claim 9
Dependent Claim
37 words
The method of claim 1, wherein: a) said surface layer is silicon; b) said grid is made of silicon; and c) said first layer is Al x Ga 1- x As for 0 ≦ x ≦ 1.0.
Claim 10
Dependent Claim
20 words
The method of claim 8, wherein said growth of said first layer further comprises periodically changing the temperature during growth.
Claim 11
Dependent Claim
30 words
The method of claim 8, wherein said growth of said first layer further comprises periodically changing the composition of said first layer material during growth through to form a superlattice.
Claim 12
Dependent Claim
15 words
The method of claim 8, comprising the further step of: a) annealing said first layer.
Claim 13
Dependent Claim
22 words
The method of claim 11, wherein said anneal is a temperature of approximately 850C for approximately 15 minutes under an arsenic overpressure.
Claim 14
Dependent Claim
18 words
The method of claim 11, wherein said anneal is a temperature of approximately 950C for approximately 10 seconds.
Claim 15
Dependent Claim
28 words
An integrated circuit, comprising: a) a first layer over a grid on a layer of a second material; and b) devices formed in said first layer and interconnected.
Claim 16
Dependent Claim
28 words
An integrated circuit, comprising: a) a first layer over a grid on a layer of a second material; and b) devices formed in said first layer and interconnected.
Claim 17
Dependent Claim
31 words
The integrated circuit of claim 14, wherein: a) said first layer is Al x Ga 1- x As for one or more x values; and b) said second material is silicon.
Claim 18
Dependent Claim
34 words
The integrated circuit of claim 14, wherein: a) said first layer includes a superlattice; and b) said grid is made of material from the group consisting of silicon dioxide, silicon nitride, and combinations thereof.
References Cited (Backward Citations)
No citation records indexed.
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