EP0345441A2
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EP
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High-Tc superconductor-gallate crystal structures
Assignee: International Business Machines Corp
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Filing: 1989-04-15
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Granted: —
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Expires: 2009-04-15
Abstract
Abstract High-T c oxide superconductive structures (22, 24) can be formed on gallate layers (18, 20), where the gallate layers (18, 20) include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. 'The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high-T c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.
Inventors
- 👤 William Joseph Gallagher
- 👤 Edward August Giess
- 👤 Arunava Gupta
- 👤 Robert Benjamin Laibowitz
- 👤 Eugene John M. O'sullivan
- 👤 Robert Lee Sandstrom
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 23:31
CPC Classifications
H; H01; H01P; H01P3/00; H01P3/02; H01P3/08; H01P3/085; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; H10N60/0661; H10N60/0716; H10N60/20; H10N60/203; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/704; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49014
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
65 words
A superconductive combination, including at least one crystalline gallate substrate layer (12; 18, 20), at least one superconductive layer (10; 22, 24) thereon, said superconductive layer (10; 22, 24) having a transition temperature in excess of 77 K and being an oxide material having Cu-O planes whose Cu and O atoms substantially align with Ga and O atoms in said gallate substrate (12; 18, 20).
Claim 2
Dependent Claim
65 words
A superconductive combination, including at least one crystalline gallate substrate layer (12; 18, 20), at least one superconductive layer (10; 22, 24) thereon, said superconductive layer (10; 22, 24) having a transition temperature in excess of 77 K and being an oxide material having Cu-O planes whose Cu and O atoms substantially align with Ga and O atoms in said gallate substrate (12; 18, 20).
Claim 3
Dependent Claim
30 words
Combination in accordance with claim 1, characterized in that said gallate layer (12; 18, 20) and/or said superconductive layer (10; 22, 24) includes a rare earth or rare earth-like element.
Claim 4
Dependent Claim
20 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) includes an alkaline earth element.
Claim 5
Dependent Claim
17 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) includes Bi.
Claim 6
Dependent Claim
17 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) includes Tl.
Claim 7
Dependent Claim
20 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) has a 1-2-3 superconducting phase.
Claim 8
Dependent Claim
33 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) has an orthorhombic structure with its a-and b-axes substantially in the plane of said layer (10; 22, 24).
Claim 9
Dependent Claim
25 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) and said gallate layer (12; 18, 20) have perovskite-like structures.
Claim 10
Dependent Claim
62 words
Combination in accordance with claim 1, characterized in that said crystalline gallate substrate (12; 18, 20) includes a rare earth or rare earth-like element, and that said superconductor layer (10; 22, 24) is in contact with said substrate (12; 18, 20), said superconductor layer (10; 22, 24) being a high-T c copper oxide composition substantially lattice-matched to said substrate (12; 18, 20).
Claim 11
Dependent Claim
23 words
Combination in accordance with claim 9, characterized in that said superconductor layer (10; 20, 24) and said substrate (12; 18, 20) exhibit orthorhombicity.
Claim 12
Dependent Claim
24 words
Combination in accordance with claim 9, characterized in that said superconductor layer (10; 22, 24) and said substrate (12; 18, 20) are single crystals.
Claim 13
Dependent Claim
34 words
Combination in accordance with claim 9, characterized in that the arrangement of atoms on the surface of said substrate (12; 18, 20) contacting said superconductor layer (10; 22, 24) approximates a (100) cubic perovskite.
Claim 14
Dependent Claim
35 words
Combination in accordance with claim 10, characterized in that the unit cell of said superconductor layer (10; 22, 24) is rotated approximately 45° with respect to the unit cell of said substrate (12; 18, 20).
Claim 15
Dependent Claim
102 words
Combination in accordance with claim 1, characterized in that the gallate layer (12; 18, 20) includes at least one rare earth or rare earth-like element, that said superconductor layer (10; 22, 24) is in contact with said gallate layer (12; 18, 20), said superconductor layer (10, 22, 24) being comprised of an oxide material having a transition temperature in excess of 30 K, said superconductor layer (10; 22, 24) being capable of carrying an electrical supercurrent, and that an electrical source (26) is connected to said superconductor layer (10; 22, 24) for providing electrical supercurrents in said superconductor layer (10; 22, 24)
Claim 16
Dependent Claim
20 words
Combination in accordance with claim 14, characterized in that said gallate layer (12; 18, 20) is a rare earth gallate.
Claim 17
Dependent Claim
36 words
Combination in accordance with claim 14, characterized in that it further includes a superconducting ground plane (24) electrically isolated from said superconductor layer (22), said ground plane (24) being comprised of a high-T c oxide superconductor.
Claim 18
Dependent Claim
59 words
Combination in accordance with claim 1, characterized by a rare earth gallate substrate (12; 18, 20), and an oriented layer (10; 22, 24) of a high-T c superconductor on said substrate (12; 18, 20) said superconductor being comprised of Cu-O planes where the Cu-Cu spacing in said superconductor closely approximates the Ga-Ga spacing in said substrate (12; 18, 20).
Claim 19
Dependent Claim
25 words
Combination in accordance with claim 1, characterized in that said superconductive layer (10; 22, 24) is substantially epitaxial with said gallate layer (12; 18, 20).
Claim 20
Dependent Claim
30 words
Combination in accordance with claim 1, characterized by a a second high-T c oxide superconductive layer (24), said gallate layer (18, 20) being located between said superconductive layers (22, 24).
Claim 21
Dependent Claim
22 words
Combination in accordance with claim 1, characterized in that said gallate layer (12; 18, 20) is sufficiently thin to permit tunneling therethrough.
References Cited (Backward Citations)
No citation records indexed.
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