Patent US1609072A successfully refreshed from Google Patents.
EP0343962A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Manufacturing electronic devices
Assignee: De Beers Industrial Diamond Division Pty Ltd
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Filing: 1989-05-24
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Granted: —
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Expires: 2009-05-24
Abstract
Abstract The invention provides a process for manufacturing an electronic device on a semiconducting substrate (10) which is transparent to light of a particular wavelength. The process includes the steps of treating the substrate to form at least one region (S,D) having a different electrical property to the substrate, and defining a conducting contact (18) for the regionn by selective photolithographic masking and chemical etching. A layer of photoresist material (16) deposited on one side of the substrate is subjected to light transmitted through the substrate from a light source on the other side of the substrate. The process can be used to produce a field effect transistor on a diamond substrate.
Inventors
- 👤 Barbara Lynn Jones
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 06:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; Y; Y10; Y10S; Y10S148/00; Y10S148/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
45 words
A process for manufacturing an electronic device characerised in that it includes a photolithographic masking and chemical etching step in which photoresist material (16) deposited on one side of a transparent substrate (10) is exposed to light transmitted through the substrate prior to chemical etching.
Claim 2
Dependent Claim
45 words
A process for manufacturing an electronic device characerised in that it includes a photolithographic masking and chemical etching step in which photoresist material (16) deposited on one side of a transparent substrate (10) is exposed to light transmitted through the substrate prior to chemical etching.
Claim 3
Dependent Claim
100 words
A process for manufacturing an electronic device on a semiconducting substrate (10) which is transparent to light of a particular wavelength characterised in that it includes the steps of: treating the substrate (10) to form at least one region (5,D) having a different electrical property to the substrate; and defining a conducting contact (18) for the region by selective photolithographic masking and chemical etching including subjecting a layer of photoresist material (16) deposited on one sidce of the substrate to light of the particular wavelength transmitted through the substrate from a light source on the other side of the substrate.
Claim 4
Dependent Claim
100 words
A process for manufacturing an electronic device on a semiconducting substrate (10) which is transparent to light of a particular wavelength characterised in that it includes the steps of: treating the substrate (10) to form at least one region (5,D) having a different electrical property to the substrate; and defining a conducting contact (18) for the region by selective photolithographic masking and chemical etching including subjecting a layer of photoresist material (16) deposited on one sidce of the substrate to light of the particular wavelength transmitted through the substrate from a light source on the other side of the substrate.
Claim 5
Dependent Claim
141 words
A process for manufacturing a field effect transistor characterised in that it includes the step of: providing a diamond substrate (10) which is transparent to light of a predetermined wavelength: defining source, gate and drain regions (S,G,D) of the transistor on or in the substrate; and exposing the layer of photoresist material to ultraviolet light which is passed through the substrate; removing the exposed photoresist material, so that a layer of photoresist mateial remains above the gate region; depositing a layer (18) of a second metal over the source, gate and drain regions; and selectively removing the layer of photoresist material and hence the layer of the second metal above the gate region, a MISFET structure thereby being obtained which has source and drain contacts (5,D) of the second metal (18) and a gate contact (6) of the first metal (14).
Claim 6
Dependent Claim
141 words
A process for manufacturing a field effect transistor characterised in that it includes the step of: providing a diamond substrate (10) which is transparent to light of a predetermined wavelength: defining source, gate and drain regions (S,G,D) of the transistor on or in the substrate; and exposing the layer of photoresist material to ultraviolet light which is passed through the substrate; removing the exposed photoresist material, so that a layer of photoresist mateial remains above the gate region; depositing a layer (18) of a second metal over the source, gate and drain regions; and selectively removing the layer of photoresist material and hence the layer of the second metal above the gate region, a MISFET structure thereby being obtained which has source and drain contacts (5,D) of the second metal (18) and a gate contact (6) of the first metal (14).
Claim 7
Dependent Claim
22 words
A process according to claim 4 characterised in that the layer (12) of insulating material comprises an oxide nitride, oxynitride or carbide.
Claim 8
Dependent Claim
27 words
A process according to claim 4 or claim 5 characterised in that the first metal (14) is a low work function metal such as aluminium or chrome.
Claim 9
Dependent Claim
32 words
A process according to any one of claims 4 to 6 characterised in that the second metal (18) is a high work function metal such as gold, platinum, gold/tantalum alloy, or palladium.
References Cited (Backward Citations)
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