Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
166 words
A process for forming a superconducting film using chemical vapor deposition, wherein providing as the starting material gas sources at least one of the compounds Ba(DPM)₂, Ba(DPM)₂.(THF) n or Ba(DPM)₂.(DMF) n , at least one of the compounds Cu(DPM)₂, Cu(DPM)₂.(THF) n or Cu(DPM)₂.(DMF) n , and at least one of the compounds M(DMP)₃, M(DPM)₃.(THF) n or M(DPM)₃.(DMF) n , where: DMP is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula: CH₃C(CH₃)₂COCHCOC(CH₃)₂CH₃, THF is tetrahydrofuran represented by the chemical formula: DMF is dimethylformamide represented by the chemical formula: HCON(CH₃)₂ M is an element chosen from the list: Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb, Lu, and n is any integer, introducing said starting material gas sources into a growth tank after gasification. simultaneously introducing at least one of the gases O₂, O₃, or N₂O, and the oxide film being formed on a substrate placed into said growth tank, whereby an oxide superconducting film is formed on a substrate placed in said growth tank.
Claim 2
Dependent Claim
166 words
A process for forming a superconducting film using chemical vapor deposition, wherein providing as the starting material gas sources at least one of the compounds Ba(DPM)₂, Ba(DPM)₂.(THF) n or Ba(DPM)₂.(DMF) n , at least one of the compounds Cu(DPM)₂, Cu(DPM)₂.(THF) n or Cu(DPM)₂.(DMF) n , and at least one of the compounds M(DMP)₃, M(DPM)₃.(THF) n or M(DPM)₃.(DMF) n , where: DMP is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula: CH₃C(CH₃)₂COCHCOC(CH₃)₂CH₃, THF is tetrahydrofuran represented by the chemical formula: DMF is dimethylformamide represented by the chemical formula: HCON(CH₃)₂ M is an element chosen from the list: Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb, Lu, and n is any integer, introducing said starting material gas sources into a growth tank after gasification. simultaneously introducing at least one of the gases O₂, O₃, or N₂O, and the oxide film being formed on a substrate placed into said growth tank, whereby an oxide superconducting film is formed on a substrate placed in said growth tank.
Claim 3
Dependent Claim
18 words
A process according to claim 1, wherein the substrate upon which said semiconductor film is grown is preheated.
Claim 4
Dependent Claim
20 words
A process according to claim 1, wherein each of said gases introduced into the growth tank are irradiated with light.
Claim 5
Dependent Claim
22 words
A process according to claim 1, wherein part or all of the O₂ gas in the above starting material gases is ozonized.
Claim 6
Dependent Claim
33 words
A process according to claim 1, wherein the growth of the semiconductor film in said CVD method is carried out under conditions that permit it to form one molecular layer at a time.